Transys
Electronics
L I M I T E D
TO-126 (SOT-32) Plastic Package
MJE270, MJE271
MJE270
MJE271
NPN PLASTIC POWER TRANSISTOR
PNP PLASTIC POWER TRANSISTOR
Medium Power
Darlingtons
for Linear and Switching Applications
PIN CONFIGURATION
1. EMITTER
2. COLLECTOR
3. BASE
1
2
3
ALL DIMENSIONS IN MM
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current
Total power dissipation up to T
C
= 25°C
Junction temperature
Collector-emitter saturation voltage
I
C
= 20 mA; I
B
= 0.2 mA
D.C. current gain
I
C
= 20 mA; V
CE
= 3 V
RATINGS
(at T
A
=25°C unless otherwise specified)
Limiting values
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
V
CBO
V
CEO
I
C
P
tot
T
j
V
CEsat
h
FE
max.
max.
max.
max.
max.
max.
min.
100
100
2.0
15
150
V
V
A
W
°C
2.0 V
500
V
CBO
V
CEO
max.
max.
100 V
100 V
MJE270, MJE271
Emitter-base voltage (open collector)
Collector current
Collector current (peak)
Base current
Total power dissipation up to T
C
= 25°C
Derate above 25°C
Total power dissipation up to T
A
= 25°C
Derate above 25°C
Junction temperature
Storage temperature
THERMAL RESISTANCE
From junction to case
From junction to ambient
CHARACTERISTICS
T
amb
= 25°C unless otherwise specified
Collector cutoff current
I
E
= 0; V
CB
= 100 V
I
B
= 0; V
CE
= 100 V
Emitter cut-off current
I
C
= 0; V
EB
= 5 V
Breakdown voltages
I
C
= 10 mA; I
B
= 0
I
C
= 1 mA; I
E
= 0
I
E
= 1 mA; I
C
= 0
Saturation voltages
I
C
= 20 mA; I
B
= 0.2 mA
I
C
= 120 mA; I
B
= 1.2 mA
Base emitter on voltage
I
C
= 120 mA; V
CE
= 10V
D.C. current gain
I
C
= 20 mA; V
CE
= 3 V
I
C
= 120 mA; V
CE
= 10 V
Transition frequency f = 1 MHz
I
C
= 0.05 A; V
CE
= 5 V
Second Breakdown Collector
Current with base Forward Biased
V
CE
= 40V; t = 1.0s; (non-repetitive)
(1) f
T
= |h
fe
|• f
test
* Pulse test: pulse width
≤
300 µs; duty cycle
≤
2%.
V
EBO
I
C
I
C
I
B
P
tot
P
tot
T
j
T
stg
R
th j–c
R
th j–a
max.
5.0
max.
2.0
max.
4.0
max.
0.1
max.
15
max.
0.12
max.
1.5
max. 0.012
max.
150
–65 to +150
V
A
A
A
W
W
/°C
W
W
/°C
ºC
ºC
8.33 °C W
/
83.3 °C W
/
I
CBO
I
CEO
I
EBO
V
CEO(sus)
*
V
CBO
V
EBO
V
CEsat
*
V
CEsat
*
V
BE(on)
*
h
FE
*
h
FE
*
f
T
(1)
max.
max.
max.
min.
min.
min.
max.
max.
max.
min.
min.
min.
0.3 mA
1.0 mA
0.1 mA
100 V
100 V
5 V
2.0 V
3.0 V
2.0 V
500
1500
6.0 MHz
I
S/b
min.
375 mA
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
