US1AB thru US1MB
SURFACE MOUNT REVERSE VOLTAGE 50 TO 1000 VOLTS
ULTRA FAST RECTIFIERS FORWARD CURRENT - 1.0 AMPERES
SMB/DO-214AA
.075(1.91)
.083(2.11)
.130(3.30)
.155(3.94)
.160(4.06)
.185(4.70)
.006(.152)
.012(.305)
.083(2.13)
.096(2.44)
.030(0.76)
.050(1.27)
.004(.102)
.008(.203)
.200(5.08)
.220(5.59)
Dimensions in inches and (millimeters)
FEATURES
For surface mounted applications
Low profile package
Built-in strain relief
Easy pick and place
Ultrafast recovery times for high efficiency
Plastic package has Underwriters Laboratory
Flammability classification 94V-0
Glass passivated junction
High temperature soldering
260
o
C/10seconds at terminals
MECHANICAL DATA
Case JEDEC DO-214AA molded plastic
Terminals Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity Indicated by cathode band
Standard Packaging 12mm tape (ELA-481)
Weight 0.003 ounce, 0.093grams
MAXIMUM RATIXGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load
For capacitive load, derate current by 20%
SYMBOL US1AB US1BB US1DB US1GB US1JB US1KB US1MB
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current @ T
L
=100 C
Peak Forward Surge Current 8.3ms Single Half Sine-Wave
Superimposed on Rated Load (JEDEC Method) T
A
=55
0
C
MaximumInstantaneous Forward Voltage at 1.0A DC
Maximum DC Reverse Current @T
A
=25
0
C
at Rated DC Blocking Voltage @T
A
=100
0
C
Typical Junctionn Capacitance (NOTE 2)
Maximum Reverse Recovery Time (NOTE 1) T
J
=25 C
Maximum Thermal Resistance (NOTE 3)
Operating and Storage Temperature Range
0
0
UNITS
Volts
Volts
Volts
Amps
Amps
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
C
J
T
RR
R
JC
50
35
50
100
70
100
200
140
200
400
280
400
1.0
30
600
420
600
800
560
800
1000
700
1000
1.0
1.3
10
100
17
50
30
1.5
1.7
Volts
A
pF
75
0
nS
C/W
0
T
J
T
STG
-50 to +150
C
NOTES
1. Rverse Recovery Test Condibons I
F
= 5A, I
R
= 1A, l
RR
= 0.25A
2. Measured at 1 MHz and applied reverse Voltag of 4.0VDC
3. 8.3mm
2
(0.13mm thick) land areas.
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1
US1AB thru US1MB
SURFACE MOUNT REVERSE VOLTAGE 50 TO 1000 VOLTS
RATINGS AND CHARACTERISTIC CURVES US1AB THRU
US1MB
Fig. 1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
Noninductive
10
Noninductive
trr
+0.5A
( )
PULSE
GENERATOR
NOTE 2
(+)
25 Vdc
(approx)
( )
D.U.T.
0
-0.25
1
NON-
Inductive
OSCILLOSCOPE
NOTE 1
(+)
NOTES:1. Rise Time=7ns max.
Input Impedance=1 megohm. 22pF
2. Rise Time=10ns max.
Source Impedance=50 Ohms.
-1.0
SET TIME
BASE FOR
10ns/cm
1cm
Fig. 2 - FORWARD CHARACTERISTICS
US1AB
JUNCTION CAPACITANCE, pF
10
Fig. 3 - TYPICAL JUNCTION CAPACITANCE
100
T
J
=25 C
f=1.0MHz
Vsig=50mVp-p
0
TYPICAL
1.0
IFM, Apk
US1GB
UF1MB
10
0.1
TJ=25 C
0
1
0.1
.01
0
.2
.4
.6
.8
1.0
1.2 1.4
1
10
100
REVERSE VOLTAGE, VOLTS
Fig. 5 - PEAK FORWARD SURGE CURRENT
30
Fig. 4 - FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT,
AMPERES
PEAK FORWARD SURGE
CURRENT, AMPERES
2.0
SINGLE PHASE
HALF W AVE
60H
Z
RESISTIVE OR
INDUCTIVE LOAD
P.C.B MOUNTED
ON 0.315x0.315"(8.0x8.0mm)
COPPER PAD AREAS
25
8.3ms SINGLE HALF SINCE-WAVE
JEDEC METHOD
20
15
10
5
1.0
25
50
75
100 125 150 175
o
LEAD TEMPERATURE, C
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
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