SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4511, REV. A
SHD114434
SHD114434A
SHD114434B
POWER SCHOTTKY RECTIFIER
Low Reverse Leakage
Applications:
•
Switching Power Supply
•
Converters
•
Free-Wheeling Diodes
•
Polarity Protection Diode
Features:
•
•
•
•
•
•
•
Ultra Low Reverse Leakage Current
Soft Reverse Recovery at Low and High Temperature
Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward
Current
Max. Peak One Cycle Non-
Repetitive Surge Current
Non-Repetitive Avalanche
Energy
Repetitive Avalanche
Current
Thermal Resistance
Max. Junction Temperature
Max. Storage Temperature
Symbol
V
RWM
I
F(AV)
I
FSM
E
AS
I
AR
R
thJC
T
J
T
stg
Condition
-
50% duty cycle, rectangular
wave form
8.3 ms, half Sine wave
(per leg)
T
J
= 25
°C,
I
AS
= 1.3 A,
L = 40mH (per leg)
I
AS
decay linearly to 0 in 1
µs
ƒ
limited by T
J
max V
A
=1.5V
R
Per Package
-
-
Max.
100
30
570
27
1.3
0.50
-65 to +200
-65 to +200
Units
V
A
A
mJ
A
°C/W
°C
°C
Electrical Characteristics:
Condition
Max.
Units
0.84
V
@ 30A, Pulse, T
J
= 25
°C
(per leg) measured at the leads
0.68
V
V
F2
@ 30A, Pulse, T
J
= 125
°C
(per leg) measured at the leads
Max. Reverse Current
I
R1
@V
R
= 100V, Pulse,
0.2
mA
T
J
= 25
°C
(per leg)
I
R2
@V
R
= 100V, Pulse,
2.0
mA
T
J
= 125
°C
(per leg)
1000
pF
Max. Junction Capacitance
C
T
@V
R
= 5 V, T
C
= 25
°C
f
SIG
= 1 MHz,
V
SIG
= 50mV (p-p) (per leg)
Due to the nature of the 100V Schottky devices, some degradation in t
rr
performance at high temperatures should
be expected, unlike conventional lower voltage Schottkys.
Characteristics
Max. Forward Voltage Drop
Symbol
V
F1
•
221 West Industry Court
Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
•
•
World Wide Web Site - http://www.sensitron.com
•
E-Mail Address - sales@sensitron.com
•
SENSITRON
TECHNICAL DATA
DATA SHEET 4511, REV. A
Mechanical Dimensions: in inches / mm
.560±.020
(14.2±.508)
.410±.010
(10.4±.254)
SHD114434
SHD114434A
SHD114434B
.410±.010
(10.4±.254)
.550±.020
(14.0±.508)
.410±.010
(10.4±.254)
.150±.010
(3.81±.254)
.410±.010
(10.4±.254)
.410±.010
(10.4±.254)
.200±.010
(5.08 ±.254)
.410±.010
(10.4±.254)
.015±.005
(.381±.127)
.075 (1.91) Max
Alumina Ring
Moly Lid
.020±.005 R
(.508±.127 )
Copper Anode
.090 (2.29) Max
.020±.005 R
(.508±.127 )
.075 (1.91)
Alumina
Moly
Moly Base
(Cathode)
Moly Anode
.020±.002
(.508±.051)
.060±.010
(1.52±.254)
Alumina Ring
Moly Base
(Cathode)
.015±.002
(.381±.051)
.060±.010
(1.52±.254)
Moly
SHD-3
SHD-3A
SHD-3B
Typical Forward Characteristics
10
2
10
1
Instantaneous Reverse Current - I
R
(mA)
Typical Reverse Characteristics
200 °C
175 °C
10
0
150 °C
125 °C
200 °C
10
1
Instantaneous Forward Current - I
F
(A)
10
-1
175 °C
100 °C
75 °C
50 °C
10
-2
10
-3
10
0
25 °C
10
-4
125 °C
0
20
40
60
80
Reverse Voltage - V
R
(V)
100
120
Typical Junction Capacitance
25 °C
10
-1
Junction Capacitance - C
T
(pF)
900
800
700
600
500
400
300
200
100
0
20
40
60
80
Reverse Voltage - V
R
(V)
100
120
10
-2
Vf Curves shown are for
0.1
0.2
0.3
0.4
0.5
0.6
0.7
die only.
Voltage Drop - V (V)
Forward
F
0.8
•
221 West Industry Court
Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
•
•
World Wide Web Site - http://www.sensitron.com
•
E-Mail Address - sales@sensitron.com
•
SENSITRON
TECHNICAL DATA
DATA SHEET 4511, REV. A
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the
datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical
equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’
fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of
the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any
other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at
a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron
Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder
maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When
exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.
•
221 West Industry Court
Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
•
•
World Wide Web Site - http://www.sensitron.com
•
E-Mail Address - sales@sensitron.com
•
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
