CYStech Electronics Corp.
P-CHANNEL Enhancement Mode MOSFET
Spec. No. : C426N3
Issued Date : 2008.03.24
Revised Date :
Page No. : 1/8
MTP2303N3
Description
The MTP2303N3 is a P-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
Features
•
V
DS
=-30V
R
DS(ON)
=240m
Ω
@V
GS
=-10V, I
DS
=-1.7A
•
Advanced trench process technology
•
Super high dense cell design for extremely low on resistance
•
Reliable and rugged
•
Compact and low profile SOT-23 package
•
Pb-free package
Applications
•
Power management in Notebook Computer
•
Portable equipment
•
Battery powered system
Equivalent Circuit
MTP2303N3
Outline
SOT-23
D
G：Gate
S：Source
D：Drain
G
S
MTP2303N3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @T
A
=25°C
(Note 1)
Continuous Drain Current @T
A
=70°C
(Note 1)
Pulsed Drain Current
(Note 2)
Maximum Power Dissipation
(Note 3)
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
I
D
I
DM
P
D
Tj, Tstg
Spec. No. : C426N3
Issued Date : 2008.03.24
Revised Date :
Page No. : 2/8
Limits
-30
±20
-1.9
-1.5
-10
1.38
0.01
-55~+150
Unit
V
V
A
A
A
W
W/°C
°C
Note : 1. Pulse Test : Pulse Width
≤300µs,
Duty Cycle≤2%
2. Pulse width limited by maximum junction temperature.
3. Surface mounted on 1 in² copper pad of FR-4 board, 270°C/W when mounted on minimum copper pad.
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient
Symbol
Rth,ja
Limit
90
Unit
°C/W
Note : Surface mounted on 1 in² copper pad of FR-4 board, 270°C/W when mounted on minimum copper pad.
Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
ΔBV
DSS
/ΔTj
V
GS(th)
I
GSS
I
DSS
*R
DS(ON)
*G
FS
Dynamic
Ciss
Coss
Crss
*t
d(ON)
*t
r
*t
d(OFF)
*t
f
*Qg
*Qgs
*Qgd
MTP2303N3
Min.
-30
-
-1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-0.1
-
-
-
-
-
-
2
230
130.4
40
7.6
8.2
17.5
9
6.2
1.4
0.3
Max.
-
-
-
±100
-1
-10
240
460
-
-
-
-
-
-
-
-
-
-
-
Unit
V
V/°C
V
nA
µA
µA
mΩ
S
Test Conditions
V
GS
=0, I
D
=-250µA
Reference to 25°C , I
D
=-1mA
V
DS
=V
GS
, I
D
=-250µA
V
GS
=±20V, V
DS
=0
V
DS
=-30V, V
GS
=0
V
DS
=-30V, V
GS
=0, Tj=70
°C
I
D
=-1.7A, V
GS
=-10V
I
D
=-1.3A, V
GS
=-4.5V
V
DS
=-10V, I
D
=-1.7A
pF
V
DS
=-15V, V
GS
=0, f=1MHz
V
DS
=-15V, I
D
=-1A, V
GS
=-10V,
R
G
=6
Ω
, R
D
=15
Ω
V
DS
=-15V, I
D
=-1.7A,
V
GS
=-10V
CYStek Product Specification
ns
nC
CYStech Electronics Corp.
Spec. No. : C426N3
Issued Date : 2008.03.24
Revised Date :
Page No. : 3/8
Electrical Characteristics (Tj=25°C, unless otherwise specified) ---Cont.
Source-Drain Diode
-
*V
SD
*I
SD
-
*I
SM
-
-
-
-
-1.2
-1
-10
V
A
A
V
GS
=0V, I
SD
=-1.25A, Tj=25°C
V
D
=V
G
=0, V
S
=-1.2V
*Pulse Test : Pulse Width
≤300µs,
Duty Cycle≤2%
Ordering Information
Device
MTP2303N3
Package
SOT-23
(Pb-free)
Shipping
3000 pcs / Tape & Reel
Marking
2303
Moisture Sensitivity Level : conform to JEDEC level 3
Recommended Storage Condition:
Temperature : 10~ 35
°C
Humidity : 30~ 60% RH
Characteristic Curves
MTP2303N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Spec. No. : C426N3
Issued Date : 2008.03.24
Revised Date :
Page No. : 4/8
MTP2303N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Spec. No. : C426N3
Issued Date : 2008.03.24
Revised Date :
Page No. : 5/8
MTP2303N3
CYStek Product Specification
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