SIDE LOOK PACKAGE
NPN PHOTOTRANSISTOR
Description
mounted in a special dark plastic side looking package
and suitable for the IRED (940nm) Type.
A
6.80
(.270)
4.50
(.180)
5.00
(.200)
4.90
(.193)
MID-95A3LH
Package Dimensions
1.50
(.059)
The MID-95A3LH is a TWIN NPN silicon phototransistor
Unit: mm ( inches
RADIANT SENSITIVE
AREA
3.05
(.112)
2.49
(.098)
B
1.00
(.040)
13.00MIN
(.511)
.50 TYP.
(.020)
0.61 ± .01
(.020)
Features
l
l
3
Wide range of collector current
Low cost plastic package
1.00MIN.
(.040)
1
2
2.54
(.100)
2.54
(.100)
3.00MIN
.
1.27 ± .01
(.050)
0.61
(.020)
1
2
1
2
3
3
EMITTER (PTR A)
COLLECTOR(COM)
EMITTER (PTR B)
NOTES :
1. All dimensions are in millimeters.(inches).
2. Tolerance is ± 0.25mm (.010") unless otherwise noted .
3. Protruded resin under flange is 1.5mm (.059") max.
4. Specifications are subject to change without notice.
Absolute Maximum Ratings
@ T
A
=25 C
Parameter
Power Dissipation
Collector-Emitter Voltage
Emitter-Collector Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
100
30
5
-55
o
C to +100
o
C
-55
o
C to +100
o
C
260
o
C for 5 seconds
Unit
mW
V
V
o
Unity Opto Technology Co., Ltd.
02/04/2002
MID-95A3LH
Optical-Electrical Characteristics
@ T
A
=25
o
C
Parameter
Collector-Emitter
Breakdown Voltage
Emitter-Collector
Breakdown Voltage
Collector-Emitter
Saturation Voltage
Rise Time
Fall Time
Collector Dark
Current
On State Collector
Current
Test Conditions
I
c
=1mA
Ee=0
Ie=100µA
Ee=0
I
c
=0.1 mA
Ee=0.1mW/cm
I
C
=1mA
V
CE
=10V
Ee=0
V
CE
=5V
Ee=0.1mW/cm
2
2
Symbol
V
(BR)CEO
V
(BR)ECO
V
CE(SAT)
Tr
Tf
I
CEO
I
C(ON)
Min.
30
5
0.1
Typ .
Max.
Unit
V
V
0.4
10
10
100
V
µS
nA
mA
V
R
=5V, R
L
=1KΩ
0.16
0.4
Typical Optical-Electrical Characteristic Curves
Iceo-Collector Dark Current -
µ
A
1000
4.0
Vce = 5
V
Ic Normalized Collector
Current
0
40
80
120
100
10
1
0.1
0.01
0.001
3.5
Ee = 0.1 mW/cm
2
3.0
@λ= 940 nm
2.5
2.0
1.5
1.0
0.5
0.0
-75
-25
25
75
125
T
A
- Ambient Temperature -
o
C
FIG.1 COLLECTOR DARK CURRENT
VS AMBIENT TEMPERATURE
Tr Tf - Rise and Fall Time - mS
20
16
12
8
4
0
0
2
4
6
8
10
Vcc = 5 V
V
RL
= 1 V
F = 100 Hz
PW = 1 ms
T
A
- Ambient Temperature -
o
C
FIG.2 NORMALIZED COLLECTOR CURRENT
VS AMBIENT TEMPERATURE
Relative Collector Current (mA)
2.0
Vce = 5 V
1.6
1.2
0.8
0.4
0.0
0
0.1
0.2
0.3
0.4
0.5
2
0.6
R
L
- Load Resistance - KΩ
FIG.3 RISE AND FALL TIME
VS LOAD RESISTANCE
Ee - Irradiance - mW/cm
FIG.4 RELATIVE COLLECTOR CURRENT
VS IRRADIANCE
Unity Opto Technology Co., Ltd.
02/04/2002
stm32/stm8
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