AlGaAs/GaAs T-1 3/4 PACKAGE
INFRARED EMITTING DIODE
Description
The MIE-526A2U is infrared emitting diodes in
GaAs technology with AlGaAs window coating
molded in pastel pink transparent package.
MIE-526A2U
Package Dimensions
φ5.05
(.200)
Unite: mm ( inches )
5.47
(.215)
7.62
(.300)
5.90
(.230)
Features
l
l
l
l
l
High radiant power and high radiant intensity
Standard T-1 3/4 (
φ
5mm) package
Peak wavelength
λ
p
= 940 nm
Good spectral matching to si-photodetector
Radiant angle : 25°
1.00
(.040)
FLAT DENOTES CATHODE
23.4 0MIN.
(.920)
.50 TYP.
(.020)
1.00MIN
(.040)
2.54
(.100)
A
C
Notes :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package
Absolute Maximum Ratings
@ T
A
=25
o
C
Parameter
Power Dissipation
Peak Forward Current(300pps,10µs pulse)
Continuos Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
120
1
100
5
-55
o
C to +100
o
C
-55
o
C to +100
o
C
260
o
C for 5 seconds
Unit
mW
A
mA
V
Unity Opto Technology Co., Ltd.
11/17/2000
MIE-526A2U
Optical-Electrical Characteristics
Parameter
Radiant Intensity
Forward Voltage
Reverse Current
Peak Wavelength
Spectral Bandwidth
View Angle
Test Conditions
I
F
=20mA
I
F
=50mA
I
F
=200mA
V
R
= 5V
I
F
=20mA
I
F
=20mA
I
F
=20mA
I
R
λ
∆λ
2θ
1/2
-
940
50
25
Symbol
Ie
V
F
Min.
Typ .
3
1.3
1.65
Max.
-
1.5
2.0
100
µA
nm
nm
@ T
A
=25
o
C
Unit
mW/sr
V
-
deg.
Typical Optical-Electrical Characteristic Curves
Relative Radiant Intensity
Forward Current I
F
(mA)
840
940
1040
1
100
90
80
70
60
50
0
-55 -25
0
25 50 75 100 125
0.5
0
Wavelength (nm)
FIG.1 SPECTRAL DISTRIBUTION
Output Power To Value I
F
=20mA
100
Ambient Temperature T
A
(
o
C)
FIG.2 FORWARD CURRENT VS.
AMBIENT TEMPERATURE
3
2.5
2
1.5
1
0.5
0
-40
-20
0
20
40
o
Forward Current (mA)
80
60
40
20
0
0.8
1.2
1.6
2
2.4
2.8
60
Forward Voltage (V)
FIG.3 FORWARD CURRENT VS.
FORWARD VOLTAGE
5
4
3
2
1
0
0
20
40
60
80
100
Ambient Temperature T
A
( C)
FIG.4 RELATIVE RADIANT INTENSITY
VS.AMBIENT TEMPERATURE
0° 10°
20°
30°
40°
1.0
0.9
0.8
0.5 0.3 0.1
0.2 0.4 0.6
50°
60°
70°
80°
90°
Output Power Relative To
Value at I
F
=20mA
Relative Radiant Intensity
Forward Current (mA)
FIG.5 RELATIVE RADIANT INTENSITY
VS. FORWARD CURRENT
FIG.6 RADIATION DIAGRAM
Unity Opto Technology Co., Ltd.
11/17/2000
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