SLOTTED
PHOTOINTERRUPTER
Description
The MIT-5A11J consists of a Gallium Arsenide in-
frared emitting diode and a NPN silicon phototran-
sistor built in a black plastic housing . It is a trans-
missive subminiature photointerrupter.
11.00
(.433)
7.00
(.276)
2
1
MIT-5A11J
Package Dimensions
Unit : mm (inches)
13.00
(.512)
4
3
2.00
(.079)
6.00
(.236)
OPTICAL LINE
Features
l
l
l
l
l
0.50
(.020)
0.50
(.020)
Non -contact switching
For- direct pc board
Dual - in - line socket mounting
Fast switching speed
Choice of mounting configuration.
6.00
(.236)
2.54
(.100)
1.58
(.062)
9.50
(.370)
1.50
(.059)
4.00
(.157)
5.00
(.197)
2.85
(.112)
7.27
(.286)
φ1.50
(.059)
1.38
(.054)
NOTE
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
Absolute Maximum Ratings
o
@T
A
=25 C
Parameter
Continuous Forward Current
INPUT
Reverse Voltage
Power Dissipation
Collector-emitter breakdown voltage
OUTPUT Emitter-Collector breakdown voltage
Collector power dissipation
Total power dissipation
Operating Temperature Range
Storage Temperature Range
Symbol
I
F
V
R
P
ad
V
(BR)CEO
V
(BR)ECO
P
C
P
TOT
T
opr
T
stg
Maximum Rating
50
5
75
30
5
75
100
Unit
mA
V
mW
V
V
mW
mW
-25
o
C
to + 85
o
C
-40
o
C
to + 100
o
C
Unity Opto Technology Co., Ltd.
04/01/2002
MIT-5A11J
Optical-Electrical Characteristics
@T
A
=25
o
C
Parameter
Input
Output
Forward Voltage
Reverse Current
Collector Dark Current
Collector Current
Transfer Cha- Response Time (RISE)
racteristics
Response Time (FALL)
symbol
V
F
I
R
Iceo
Ic (on)
t
r
t
f
1
20
20
Min.
Typ.
1.2
Max.
1.4
10
100
0.4
10
100
100
Unit.
V
µA
nA
V
mA
µS
µS
Test Conditions
I
F
=20mA
V
R
=5V
Vce =10V
Ic=0.1mA,Ee=0.1mW/cm
2
I
F
=20mA, Vce =5V
Ic=100µA, Vce =5V
R
L
=1k, d =1mm
Collector Emitter Saturation Voltage
V
CE(SAT)
Typical Optical-Electrical Characteristic Curves
Forward Current I
F
(mA)
60
50
40
30
20
10
0
-25
0
25
50
75
100
Power Dissipation (mW)
120
100
80
60
40
20
0
-25
0
25
50
75
o
P
TOT
P
D
, P
C
100
Ambient Temperature T
A
Fig.1 forward Current
VS
.
Ambient Temperature
Forward Current I
F
(mA)
100
80
60
40
20
0
0.8
1.2
1.6
2.0
2.4
2.8
Ambient Temperature T
A
( C )
Fig.2 Power Dissipation vs
Ambient Temperature
Collector Current Ic (mA)
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
0
Vce=2V
Ta=25
o
C
5
10
15
20
25
30
Forward Voltage V
F
(V)
Fig.3 Forward Current
VS
Forward Voltage
Relative Collector Current (%)
Collector Current Ic (
µ
A)
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0
2
4
6
8
10
12
Ta=25℃
120
100
80
60
40
20
0
-25
Forward Current I
F
(mA)
Fig.4 Collector Current vs
Forward Current
20mA
I
F
=15mA
10mA
4mA
0
25
50
75
100
Collector-Emitter Voltage Vce (V)
Fig.5 Collector Current vs. Vce
Ambient Temperature T
A
(
o
C )
Fig.6 Relative Collector Current
VS
. T
A
Unity Opto Technology Co., Ltd.
04/01/2002
MIT-5A11J
Typical Optical-Electrical Characteristic Curves
Collector Dark Current I
CEO
10000
V
CE
=20V
1000
100
10
1
0
25
50
75
o
1000
Response Time (
µ
s)
100
10
1
V
CE
=2V
I
C
=100mA
Ta=25
o
C
100
0.1
0.01
Ambient Temperature T
A
(
C
)
Fig.7 Collector Dark Current vs.
Ambient Temperature
100
Load Resistance R
t
(KΩ)
Fig.8 Response Time vs.
Load Resistance
0.1
1
10
100
Relative Sensitivity (%)
Ta=25
o
C
Response Time Measurement Circuit
80
60
40
20
0
700
Input
800
900
1000
1100
1200
VR
Output
Input
Output
tr
90 %
10 %
t
t
tf
IL
V
CC
Wavelength (nm)
Fig.9 Spectral Sensitivity (Detecting side)
Sensing Position Characteristics
(Typical)
X
Y
I
F
=20mA
V
CE
=5V
I
F
=20mA
V
CE
=5V
Ta=25
o
C
Relative light current I
L
(%)
100
Ta=25
o
C
(Center of optical axis)
50
X
Y
0
0
-2 -1 0 +1 +2 (mm) -2 -1 0 +1 +2 (mm)
0
+
+
Distance d (mm)
Unity Opto Technology Co., Ltd.
04/01/2002
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