CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C381J3
Issued Date : 2007.06.12
Revised Date :2009.02.04
Page No. : 1/8
MTN40N03J3
Features
•
Dynamic dv/dt Rating
•
Simple Drive Requirement
•
Repetitive Avalanche Rated
•
Fast Switching Characteristic
•
RoHS compliant package
BV
DSS
I
D
R
DSON
30V
36A
21mΩ
Symbol
MTN40N03J3
Outline
TO-252
G：Gate
D：Drain
S：Source
G D S
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @V
GS
=10V, T
C
=25°C
Continuous Drain Current @V
GS
=10V, T
C
=100°C
Pulsed Drain Current
Total Power Dissipation (T
C
=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
Note : *1
.
Pulse width limited by safe operating area
*2 . Tj=25°C, V
DD
=20V, L=0.1mH, R
G
=25Ω, I
AS
=10A
V
DS
V
GS
I
D
I
D
I
DM
Pd
Tj, Tstg
30
±20
36
25
150 *1
50
0.4
-55~+150
V
V
A
A
A
W
W/°C
°C
MTN40N03J3
CYStek Product Specification
CYStech Electronics Corp.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
R
th,j-c
R
th,j-a
Spec. No. : C381J3
Issued Date : 2007.06.12
Revised Date :2009.02.04
Page No. : 2/8
Value
2.5
110
Unit
°C/W
°C/W
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
-
0.037
-
26
-
-
-
18
24
17
3
10
7.2
60
22.5
10
800
380
133
-
-
-
Max.
-
-
3.0
-
±
100
25
250
21
30
-
-
-
-
-
-
-
-
-
-
1.3
36
150
Unit
V
V/°C
V
S
nA
μA
μA
m
Ω
m
Ω
Test Conditions
V
GS
=0, I
D
=250μA
Reference to 25°C, I
D
=1mA
V
DS
= V
GS
, I
D
=250μA
V
DS
=10V, I
D
=18A
V
GS
=
±
20
V
DS
=30V, V
GS
=0
V
DS
=24V, V
GS
=0, Tj=150°C
V
GS
=10V, I
D
=18A
V
GS
=4.5V, I
D
=14A
Static
BV
DSS
30
∆BV
DSS
/∆Tj
-
V
GS(th)
1.0
G
FS
-
I
GSS
-
I
DSS
-
I
DSS
-
*R
DS(ON)
-
*R
DS(ON)
-
Dynamic
*Qg
-
*Qgs
-
*Qgd
-
*t
d(ON)
-
*tr
-
*t
d(OFF)
-
*t
f
-
Ciss
-
Coss
-
Crss
-
Source-Drain Diode
*V
SD
-
*I
S
-
*I
SM
-
nC
I
D
=18A, V
DS
=24V, V
GS
=5V
V
DS
=15V, I
D
=18A, V
GS
=10V,
R
G
=3.3
Ω
, R
D
=0.83
Ω
ns
pF
V
GS
=0V, V
DS
=25V, f=1MHz
V
A
A
I
S
=36A, V
GS
=0V
V
D
=V
G
=0, V
S
=1.3V
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
Ordering Information
Device
MTN40N03J3
Package
TO-252
(RoHS compliant)
Shipping
2500 pcs / Tape & Reel
Marking
40N03
MTN40N03J3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Spec. No. : C381J3
Issued Date : 2007.06.12
Revised Date :2009.02.04
Page No. : 3/8
MTN40N03J3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Spec. No. : C381J3
Issued Date : 2007.06.12
Revised Date :2009.02.04
Page No. : 4/8
MTN40N03J3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Spec. No. : C381J3
Issued Date : 2007.06.12
Revised Date :2009.02.04
Page No. : 5/8
MTN40N03J3
CYStek Product Specification
嵌入式系统
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