CYStech Electronics Corp.
20V N-CHANNEL Enhancement Mode MOSFET
Spec. No. : C323N3
Issued Date : 2004.04.05
Revised Date : 2004.10.22
Page No. : 1/5
. .
MTN2302N3
Features
•
V
DS
=20V
R
DS(ON)
=65m
Ω
@V
GS
=4.5V, I
DS
=3.6A
R
DS(ON)
=95m
Ω
@V
GS
=2.5V, I
DS
=3.1A
•
Advanced trench process technology
•
High density cell design for ultra low on resistance
•
Excellent thermal and electrical capabilities
•
Compact and low profile SOT-23 package
Equivalent Circuit
MTN2302N3
Outline
SOT-23
D
G
G：Gate
S：Source
D：Drain
S
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
I
DM
Ta=25℃
Ta=75℃
P
D
Tj
Tstg
Limits
20
±8
2.4
10
1.25
0.8
-55~+150
-55~+150
Unit
V
V
A
A
W
°C
°C
MTN2302N3
CYStek Product Specification
CYStech Electronics Corp.
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient(PCB mounted)
Lead Temperature, for 5 second Soldering(1/8” from case)
Note : Surface mounted on FR-4 board, t≦5sec.
Spec. No. : C323N3
Issued Date : 2004.04.05
Revised Date : 2004.10.22
Page No. : 2/5
. .
Symbol
Rth,ja
T
L
Limit
100
260
Unit
°C/W
°C
Electrical Characteristics (Ta=25°C)
Symbol
Static
BV
DSS
V
GS(th)
I
GSS/F
I
GSS/R
I
DSS
*I
D(ON)
*R
DS(ON)
Min.
20
0.45
-
-
-
6
-
-
-
Typ.
-
-
-
-
-
-
50
75
10
450
70
43
7
55
16
10
5.2
0.65
1.5
-
0.75
Max.
-
-
100
-100
1
-
65
95
-
-
-
-
15
80
60
25
10
-
-
1.6
1.2
Unit
V
V
nA
nA
µA
A
mΩ
S
Test Conditions
V
GS
=0, I
D
=250µA
V
DS
=V
GS
, I
D
=250µA
V
GS
=+8V, V
DS
=0
V
GS
=-8V, V
DS
=0
V
DS
=20V, V
GS
=0
V
DS
=5V, V
GS
=4.5V
I
D
=3.6A, V
GS
=4.5V
I
D
=3.1A, V
GS
=2.5V
V
DS
=5V, I
D
=3.6A
*G
FS
Dynamic
Ciss
-
Coss
-
Crss
-
t
d(ON)
-
t
r
-
t
d(OFF)
-
t
f
-
Qg
-
Qgs
-
Qgd
-
Source-Drain Diode
I
SD
-
V
SD
-
pF
V
DS
=10V, V
GS
=0, f=1MHz
V
DD
=10V, I
D
=1A, R
L
=10
Ω
V
GEN
=4.5V, R
G
=6
Ω
V
DS
=10V, I
D
=3.6A,
V
GS
=4.5V,
-
V
GS
=0V, I
SD
=1A
*Pulse Test : Pulse Width
≤300µs,
Duty Cycle≤2%
ns
nC
A
V
MTN2302N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Spec. No. : C323N3
Issued Date : 2004.04.05
Revised Date : 2004.10.22
Page No. : 3/5
. .
MTN2302N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C323N3
Issued Date : 2004.04.05
Revised Date : 2004.10.22
Page No. : 4/5
. .
MTN2302N3
CYStek Product Specification
CYStech Electronics Corp.
SOT-23 Dimension
Spec. No. : C323N3
Issued Date : 2004.04.05
Revised Date : 2004.10.22
Page No. : 5/5
. .
A
L
3
B
1
2
S
Marking:
TE
02
V
G
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
Style: Pin 1.Gate 2.Source 3.Drain
C
D
K
H
J
*: Typical
DIM
A
B
C
D
G
H
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0005 0.0040
Millimeters
Min.
Max.
2.80
3.04
1.20
1.60
0.89
1.30
0.30
0.50
1.70
2.30
0.013
0.10
DIM
J
K
L
S
V
Inches
Min.
Max.
0.0034 0.0070
0.0128 0.0266
0.0335 0.0453
0.0830 0.1083
0.0098 0.0256
Millimeters
Min.
Max.
0.085
0.177
0.32
0.67
0.85
1.15
2.10
2.75
0.25
0.65
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
•
Lead: 42 Alloy ; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN2302N3
CYStek Product Specification
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