T-1 3/4 PACKAGE
PIN PHOTODIODE
Description
The MID-54A19 is a photodiode mounted in special
dark end look plastic package and suitable for the
IRED (940nm) type.
7.62
(.300)
5.90
(.230)
1.00
(.040)
MID-54A19
Package Dimensions
ψ5.05
(.200)
Unit: mm ( inches
5.47
(.215)
Features
l
l
l
l
l
FLAT DENOTES CATHOD
High photo sensitivity
Low junction capacitance
High cut-off frequency
Fast switching time
Acceptance angle : 40°
1.00MIN.
(.040)
2.54
(.100)
0.50TYP.
(.020)
23.40MIN.
(.920)
A
C
Application
l
Data communication
Notes :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.0 mm (.040") max.
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
@ T
A
=25 C
Parameter
Power Dissipation
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
150
-55
o
C to +100
o
C
-55
o
C to +100
o
C
260
o
C for 5 seconds
Unit
mW
o
Unity Opto Technology Co., Ltd.
02/04/2002
MID-54A19
Optical-Electrical Characteristics
@ T
A
=25
o
C
Parameter
Test Conditions
Ee=0
Reverse Dark Current
Open Circuit Voltage
Rise Time
Fall Time
Light Current
Total Capacitance
V
R
=10V
Ee=0
λ=940nm
Ee=0.1mW/cm
2
V
R
=10V
λ=940nm
R
L
=1KΩ
V
R
=5V,
λ=940nm
Ee=0.1mW/cm
2
V
R
=3V, f=1MH
Z
Ee=0
V
OC
Tr
Tf
I
L
C
T
7
350
30
30
12
25
µA
pF
mV
nS
I
D
30
nA
Symbol
V
(BR)R
Min.
30
Type .
Max.
Unit
V
I
R
Reverse Break Down Voltage=100µA
Typical Optical-Electrical Characteristic Curves
4000
100
80
60
40
20
0
0
5
10
15
20
0.01
0.1
1
10
Dark Current - pA
3000
2000
1000
0
Capacitance C - pF
Reverse Voltage - V
R
FIG.1 DARK CURRENT VS REVERSE VOLTAGE
T
a
=25
o
C, Ee=0 mW/cm
2
200
Reverse Voltage- V
R
FIG.2 CAPACITANCE VS. REVERSE VOLTAGE
F=1MHZ, Ee=0mW/cm
2
1000
10
0
Total Power Dissipation mW
150
Dark Current IR - nA
0
20
40
60
80
100
100
100
10
50
1
0
0
Ambient Temperature -
o
C
FIG.3 TOTAL POWER DISSIPATION
VS. AMBIENT TEMPERATURE
Ambient Temperature-
o
C
FIG.4 DARK CURRENT VS AMBIENT
TEMPERATURE
V
R
=10, Ee=0 mw/cm
2
0
20
40
60
80
100
Unity Opto Technology Co., Ltd.
02/04/2002
MID-54A19
Typical Optical-Electrical Characteristic Curves
100
T
A
=25℃
1000
Relative Sensitivity (%)
80
60
40
20
0
700
800
900 1000 1100 1200
Ip -
µ
A
Photocurrnet
100
10
1
0.1
0.01
0.1
1
2
10
Wavelength-nm
FIG.5 RELATIVE SPECTRAL SENSITIVITY
VS. WAVELENGTH
0° 10° 20°
30°
Irradiance Ee (mW/cm )
FIG.6 PHOTOCURRENT VS.
IRRADIANCE =940 nm
Relative Sensitivity
40°
1.0
0.9
0.8
50°
60°
70°
80°
90°
0.5 0.3 0.1 0.2 0.4 0.6
FIG.7 SENSITIVITY DIAGRAM
Unity Opto Technology Co., Ltd.
02/04/2002
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