PTF 10045
30 Watts, 1.60–1.65 GHz
GOLDMOS
™
Field Effect Transistor
Description
The PTF 10045 is a common source N-channel enhancement-mode
lateral MOSFET intended for large signal amplifier applications to 1.65
GHz. It is rated at 30 watts power output. Nitride surface passivation
and gold metallization ensure excellent device lifetime and reliability.
•
Performance at 1650 MHz, 28 Volts
- Output Power = 30 Watts
- Power Gain = 11.5 dB Typ
Full Gold Metallization
Silicon Nitride Passivated
Excellent Thermal Stability
Back Side Common Source
100% Lot Traceability
•
•
•
•
•
Typical Output Power and Efficiency vs. Input Power
40
60
Output Power (Watts)
Output Power
20
40
Efficiency (%)
30
Efficiency
50
A-12
1004
5
3456
9955
V
DD
= 28V
10
I
DQ
= 380 mA
f = 1650 MHz
0
1
2
3
4
30
0
20
Input Power (Watts)
Package 20222
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature
Thermal Resistance (Tflange = 70°C)
T
STG
R
qJC
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
±20
200
120
0.7
150
1.4
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
e
1
PTF 10045
Electrical Characteristics
(100% Tested)
Characteristic
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
e
Conditions
V
GS
= 0 V, I
D
= 25 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 10 V, I
D
= 75 mA
V
DS
= 10 V, I
D
= 3 A
Symbol
V
(BR)DSS
I
DSS
V
GS(th)
g
fs
Min
65
—
3.0
—
Typ
—
—
—
2.0
Max
—
1.0
5.0
—
Units
Volts
mA
Volts
Siemens
RF Specifications
(100% Tested)
Characteristic
Common Source Power Gain
(V
DD
= 28 V, P
OUT
= 30 W, I
DQ
= 380 mA, f = 1650 MHz)
Power Output at 1 dB Compression
(V
DD
= 28 V, I
DQ
= 380 mA, f = 1650 MHz)
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 30 W, I
DQ
= 380 mA, f = 1650 MHz)
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 30 W, I
DQ
= 380 mA, f = 1650 MHz—
all phase angles at frequency of test)
Symbol
G
ps
P-1dB
h
Y
Min
10.0
30
40
—
Typ
11.5
35
43
—
Max
—
—
—
10:1
Units
dB
Watts
%
—
Typical Performance
Typical P
OUT
, Gain & Efficiency
(at P-1dB)
vs. Frequency
Output Power & Efficiency
13
12
Gain (dB)
Efficiency (%)
70
60
50
40
Broadband Test Fixture Performance
Gain
Efficiency (%)
11
50
40
Gain
11
10
9
8
1400
Gain (dB)
10
9
8
7
6
1600
V
DD
= 28 V
I
DQ
= 380 mA
P
OUT
= 30 W
Return Loss (dB)
- 20
5
-10
10
V
DD
= 28 V
I
DQ
= 380 mA
1450
1500
Output Power (W)
30
1550
1600
20
1650
1610
1620
1630
1640
-15
0
1650
Frequency (MHz)
Frequency (MHz)
2
Return Loss
0
30
Efficiency
12
60
e
Output Power vs. Supply Voltage
40
-10
PTF 10045
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
V
DD
= 28 V, I
DQ
= 380 mA
Output Power (Watts)
35
-20
f
1
= 1549.9 MHz, f
2
= 1550.0 MHz
3rd Order
IMD (dBc)
-30
-40
-50
-60
30
5th
7th
25
I
DQ
= 380 mA
f = 1650 MHz
20
24
26
28
30
32
34
36
0
10
20
30
40
Supply Voltage (Volts)
Output Power (Watts-PEP)
Capacitance vs. Supply Voltage
120
6
Bias Voltage vs. Temperature
1.03
1.02
Bias Voltage (V)
1.01
1.00
0.99
0.98
0.97
0
40
0.3
0.87
1.44
2.01
2.58
3.15
Cds and Cgs (pF)
100
80
60
40
20
0
0
10
V
GS
= 0 V
f = 1 MHz
5
Voltage normalized to 1.0 V
Series show current (A)
C
gs
C
ds
C
rss
20
30
3
2
1
Crss (pF)
4
0.96
-20
30
Temp. (°C)
80
130
Supply Voltage (Volts)
Impedance Data
V
DD
= 28 V, P
OUT
= 30 W, I
DQ
= 380 mA
D
0
Z
0
= 10
W
Z Source
Z Load
0 .2
G
S
0 .1
Z Load
1400 MHz
Frequency
MHz
1400
1450
1500
1550
1600
1650
Z Source
W
R
1.9
1.5
1.1
0.9
0.8
0.7
jX
1.2
0.7
0.5
0.5
0.6
0.7
R
2.0
2.0
2.0
2.0
2.0
1.8
Z Load
W
jX
2.1
2.0
2.0
1.9
1.6
1.2
3
1650 MHz
1400 MHz
1650 MHz
Z Source
0
.0
0.1
0.2
0.3
PTF 10045
Typical Scattering Parameters
(V
DS
= 28 V, I
D
= 1 A)
e
S11
S21
Ang
-169
-170
-171
-172
-172
-175
-174
-176
-175
-178
-176
-179
-177
-180
-179
-178
-180
178
178
178
177
177
176
176
176
174
175
173
175
171
173
170
173
f
(MHz)
400
450
500
550
600
650
700
750
800
850
900
950
1000
1050
1100
1150
1200
1250
1300
1350
1400
1450
1500
1550
1600
1650
1700
1750
1800
1850
1900
1950
2000
S12
Ang
37.8
32.9
33.4
26.3
22.6
20.5
19.7
11.5
13.0
10.4
9.64
5.00
8.43
3.80
0.10
0.37
3.62
-2.34
0.68
-3.51
-0.82
-6.53
-2.30
-5.00
-4.08
-9.41
-6.95
-9.70
-9.64
-11.4
-10.6
-13.8
-13.1
S22
Ang
-18.1
-10.1
0.014
11.2
41.0
58.5
71.2
66.9
77.9
78.2
78.1
82.7
85.2
77.2
79.0
81.5
75.5
75.4
76.0
75.4
71.1
78.4
74.3
78.7
76.9
81.1
77.3
77.9
79.0
74.3
73.5
64.7
63.2
Mag
0.933
0.933
0.951
0.937
0.971
0.952
0.968
0.949
0.975
0.982
0.964
0.972
0.971
0.983
0.962
0.996
0.959
0.989
0.971
0.981
0.983
0.968
0.965
0.960
0.950
0.950
0.950
0.952
0.950
0.954
0.960
0.960
0.960
Mag
4.28
3.48
2.98
2.63
2.20
1.91
1.76
1.49
1.30
1.21
1.05
0.923
0.887
0.793
0.736
0.672
0.642
0.585
0.553
0.516
0.492
0.443
0.444
0.405
0.391
0.360
0.365
0.330
0.317
0.299
0.314
0.285
0.290
Mag
0.005
0.004
0.003
0.002
0.003
0.003
0.004
0.005
0.006
0.007
0.007
0.008
0.010
0.011
0.011
0.013
0.012
0.013
0.014
0.015
0.014
0.015
0.017
0.017
0.019
0.019
0.022
0.022
0.025
0.026
0.030
0.030
0.034
Mag
0.833
0.859
0.936
0.940
0.924
0.935
0.946
0.946
0.951
0.945
0.917
0.931
0.949
0.958
0.931
0.970
0.956
0.965
0.961
0.967
0.977
0.952
0.985
0.962
0.998
0.950
0.955
0.950
0.960
0.947
0.950
0.948
0.980
Ang
-154
-157
-153
-157
-161
-166
-165
-171
-168
-172
-173
-176
-171
-174
-173
-176
-175
-177
-176
-177
-178
-178
-179
-180
-180
179
179
178
179
175
177
174
177
Test Circuit
Test Circuit Schematic for f = 1650 MHz
4
e
PTF 10045
Placement Diagram (not to scale)
DUT
l
1
l
2
l
5
l
6
l
3
l
4
C1
C2, C3, C6, C9
C4, C5
C7
C8
L1, L2
R1, R2
Circuit Board
PTF 10045
.090
l
@ 1650 MHz
Microstrip 50
W
.265
l
@ 1650 MHz
Microstrip 50
W
.215
l
@ 1650 MHz
Microstrip 50
W
.100
l
@ 1650 MHz
Microstrip 50
W
.115
l
@ 1650 MHz
Microstrip 6.4
W
.170
l
@ 1650 MHz
Microstrip 9.2
W
0.6 pF, Capacitor ATC 100 B
33 pF, Capacitor ATC 100 B
0.6–3.6 pF, Variable Capacitor, Johanson
0.1
mF,
50 V, Capacitor Digi-Key P4917-ND
100
mF,
50 V, Electrolytic Capacitor, Digi-Key P5276
3 Turn, #20 AWG, .120” I.D.
220
W,
1/4 W Resistor
.028" Dielectric Thickness,
e
r
= 4.0, AlliedSignal, G200, 2 oz. copper
Artwork (1 inch
)
Ericsson Microelectronics
RF Power Products
Morgan Hill, CA 95037 USA
1-877-GOLDMOS (465-3667) United States
+46 8 757 4700 International
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
Specifications subject to change without notice.
L2
© 1998 Ericsson Inc.
EUS/KR 1301-PTF 10045 Uen Rev. A 01-27-99
5
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