PTF 10119
12 Watts, 2.1–2.2 GHz
GOLDMOS
™
Field Effect Transistor
Description
The PTF 10119 is an internally matched, common source, N-channel
enhancement-mode lateral MOSFET intended for WCDMA
applications from 2.1 to 2.2 GHz. It is rated at 12 watts power output.
Nitride surface passivation and gold metallization ensure excellent
device reliability.
•
•
•
•
•
•
•
INTERNALLY MATCHED
Performance at 2.17 GHz, 28 Volts
- Output Power = 12 Watts Min
- Power Gain = 11 dB Typ
- Efficiency = 43% Typ @ P-1dB
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
Excellent Thermal Stability
100% lot traceability
Typical Output Power vs. Input Power
20
Output Power (Watts)
16
12
8
4
0
0
0.2
0.4
0.6
0.8
1
1.2
A-12
1011
9
3456
0053
V
DD
= 28 V
I
DQ
= 160 mA
f = 2170 MHz
Input Power (Watts)
Package 20222
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
Symbol
V
DSS
V
GS
T
J
P
D
T
STG
R
qJC
Value
65
±20
200
55
0.31
–40 to +150
3.2
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
e
1
PTF 10119
Electrical Characteristics
Characteristic
(100% Tested)
e
Conditions
Symbol
V
(BR)DSS
I
DSS
V
GS(th)
g
fs
Min
65
—
3.0
—
Typ
—
—
—
0.8
Max
—
1.0
5.0
—
Units
Volts
mA
Volts
Siemens
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= 50 mA
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Forward Transconductance
V
DS
= 26 V, V
GS
= 0 V
V
DS
= 10 V, I
D
= 75 mA
V
DS
= 10 V, I
D
= 2 A
RF Specifications
(100% Tested)
Characteristic
Gain
(V
DD
= 28 V, P
OUT
= 3 W, I
DQ
= 160 mA, f = 2.11, 2.17 GHz)
Power Output at 1 dB Compressed
(V
DD
= 28 V, I
DQ
= 160 mA, f = 2.17 GHz)
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 12 W, I
DQ
= 160 mA, f = 2.17 GHz)
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 12 W, I
DQ
= 160 mA, f = 2.17 GHz
—all phase angles at frequency of test)
Symbol
G
ps
p-1dB
h
D
Y
Min
10
12
30
—
Typ
11
14
43
—
Max
—
—
—
10:1
Units
dB
Watts
%
—
Impedance Data
V
DS
= 28 V, P
OUT
= 12 W, I
DQ
= 160 mA
D
Z
0
= 50
W
Z Source
Z Load
0. 2
0
0.
45
G
2.30 GHz
S
Z Load
2.30 GHz
0.0
Frequency
GHz
2.00
2.10
2.12
2.15
2.17
2.20
2.30
R
0.1
0.2
0.3
0.4
jX
-12.11
-19.50
-18.82
-14.14
-13.15
-9.28
12.03
R
3.30
3.55
4.12
3.75
3.53
3.32
3.23
jX
1.21
0.92
< --
-
W
AV
5.7
16.4
19.7
22.8
23.0
26.6
20.2
0.1
0.88
0.62
0.34
0.38
Z Source
2.00 GHz
0.
2
EL
0.3
0.84
05
2
0.5
Z Source
W
Z Load
W
2.00 GHz
0.3
0.1
e
Bias Voltage vs. Temperature
1.03
1.02
1.01
PTF 10119
Capacitance vs. Supply Voltage *
50
45
3
Voltage nomalized to 1.0 V
Series show current (A)
Cds and Cgs (pF)
Bias Voltage (V)
40
35
30
25
20
15
10
5
0
0
0.99
0.98
0.97
0.96
0.95
0.94
-20
0
20
40
60
80
100
0.075
0.5
0.925
0.2875
0.7125
1.1375
1.5
C
ds
C
rss
10
20
30
40
1
0.5
0
Temp. (°C)
Supply Voltage (Volts)
*This part is internally matched. Measurements of the finished
product will not yield these figures.
Ericsson Microelectronics
RF Power Products
Morgan Hill, CA 95037 USA
1-877-GOLDMOS (465-3667) United States
+46 8 757 4700 International
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
Specifications subject to change without notice.
L1
© 1998 Ericsson Inc.
EUS/KR 1301-PTF 10119 Uen Rev. A 12-21-99
3
Crss (pF)
1.00
C
gs
V
GS
= 0 V
f = 1 MHz
2.5
2
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