e
PTF 10100
165 Watts, 860–900 MHz
LDMOS Field Effect Transistor
Description
The 10100 is an internally matched common source N-channel
enhancement-mode lateral MOSFET intended for large signal amplifier
applications from 860 to 900 MHz. It is rated at 165 watts power output.
Nitride surface passivation and gold metallization ensure excellent
device lifetime and reliability.
•
•
•
•
•
•
INTERNALLY MATCHED
Performance at 894 MHz, 28 Volts
- Output Power = 165 Watts
- Power Gain = 13.0 dB Typ
- Drain Efficiency = 50% Typ
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
100% lot traceability
Typical Output Power & Efficiency vs. Input Power
180
60
Efficiency
Output Power (Watts)
Efficiency (%)
140
45
100
30
A-12
3456
9917
1010
0
V
DD
= 28.0 V
60
Output Power
20
0
1
2
3
4
5
6
7
8
0
I
DQ
= 1.8 A Total
f = 880 MHz
15
Input Power (Watts)
Package 20250
Maximum Ratings
Parameter
Drain-Source Voltage
(1)
Gate-Source Voltage
(1)
Operating Junction Temperature
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
(1)
per side
Symbol
V
DSS
V
GS
T
J
P
D
T
STG
R
qJC
Value
65
±20
200
500
2.85
–40 to +150
0.35
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
1
PTF 10100
Electrical Characteristics
(per side)
(100% Tested)
Characteristic
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
e
Conditions
V
GS
= 0 V, I
D
= 5 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 10 V, I
D
= 75 mA
V
DS
= 10 V, I
D
= 3 A
Symbol
V
(BR)DSS
I
DSS
V
GS(th)
g
fs
Min
65
—
—
—
Typ
—
—
4.3
2.5
Max
—
1.0
—
—
Units
Volts
mA
Volts
Siemens
RF Specifications
(100% Tested)
Characteristic
Gain
(V
DD
= 28 V, P
OUT
= 165 W, I
DQ
= 1.8 A Total, f = 894 MHz)
Power Output at 1 dB Compression
(V
DD
= 28 V, I
CQ
= 1.8 A Total, f = 880 MHz)
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 165 W, I
DQ
= 1.8 A Total, f = 894 MHz)
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 165 W(PEP), I
DQ
= 1.8 A Total,
f = 893.9, 894 MHz—all phase angles at frequency of test)
Symbol
G
ps
P-1dB
h
Y
Min
12.0
165
45
—
Typ
13.0
180
50
—
Max
—
—
—
10:1
Units
dB
Watts
%
—
Typical Performance
Typical P
OUT
(at P-1dB), Gain vs. Frequency
Output Power & Efficiency
18
Output Power (W )
16
175
225
Broadband Test Fixture Performance
16
Efficiency (%)
50
14
60
Gain (dB)
Gain
40
Gain
V
DD
= 28 V
14
Gain (dB)
12
Efficiency (%)
10
865
870
875
880
885
890
25
895
75
I
DQ
= 1.8 A Total
125
12
V
DD
= 28 V
I
DQ
= 1.8 A Total
P
OUT
= 165 W
Return
Loss (dB)
30
-20
5
-10
10
-15
-20
0
-25
895
10
8
865
870
875
880
885
890
Frequency (MHz)
Frequency (MHz)
2
Return Loss
Efficiency
e
Typical Performance
Output Power vs. Supply Voltage
200
-10
PTF 10100
Intermodulation Distortion vs. Output Power
V
DD
= 28 V
-20
Output Power (Watts)
180
160
I
CQ
= 1.8 A Total
f
1
= 880.0 MHz
f
2
= 880.1 MHz
3rd order
IMD (dBc)
30
140
120
100
80
60
40
18
20
22
24
26
28
-30
-40
-50
-60
30
I
DQ
=1.8 A Total
f = 894 MHz
50
70
90
110
130
150
170
Supply Voltage (Volts)
Output Power (Watts-PEP)
Capacitance vs. Supply Voltage
(per side)
*
600
500
95
85
Cds & Cgs (pF)
C
gs
400
300
200
100
0
0
10
20
30
40
75
C
ds
V
GS
= 0 V
f = 1 MHz
55
45
35
25
C
rss
15
5
Supply Voltage (Volts)
*This part is internally matched. Measurements of the finished
product will not yield these figures.
3
Crss (pF)
65
PTF 10100
Impedance Data
---
>
OR
e
Z Source
RD
G
D
Z Load
EN
E
R AT
D
-
W
AVELENGTHS
MHz
860
870
880
890
900
R
2.3
1.9
1.8
1.7
1.6
jX
1.6
0.8
0.3
0.1
-0.2
R
1.60
1.70
1.90
1.95
1.80
jX
-1.1
-1.7
-2.1
-1.8
-1.5
D-
TOW
ARD
LOA
G
TH
S
900 MHz
860 MHz
900 MHz
Z Load
0.1
Typical Scattering Parameters
(V
DS
= 28 V, I
D
= 2 A per side)
f
(MHz)
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
1050
1100
1150
1200
1250
1300
1350
1400
1450
1500
S11
Mag
0.980
0.982
0.983
0.989
0.989
0.987
0.983
0.982
0.980
0.972
0.958
0.929
0.858
0.693
0.783
0.918
0.951
0.974
0.988
0.984
0.979
0.980
0.992
0.991
0.986
S21
Ang
-178
-179
-180
179
179
179
178
177
176
175
174
171
168
173
-170
-172
-175
-177
-178
-179
-180
180
180
179
178
S12
Ang
15.6
12.8
9.48
7.19
5.48
2.11
-0.90
-4.52
-10.2
-14.3
-19.9
-27.5
-42.4
-75.9
-125
-153
-167
-179
165
158
-154
179
166
156
149
4
W
EN
AVE
L
S22
Ang
-85.2
-85.3
-85.7
-85.3
-93.7
-74.5
-64.9
-68.5
-55.1
-88.5
-87.2
-105
-133
174
120
101
89.2
81.8
77.9
76.7
77.4
73.9
74.5
78.7
79.7
Mag
0.996
0.773
0.641
0.545
0.489
0.449
0.425
0.414
0.405
0.419
0.442
0.509
0.662
0.882
0.714
0.423
0.261
0.184
0.124
0.060
0.048
0.070
0.058
0.049
0.042
Mag
0.010
0.008
0.006
0.005
0.003
0.002
0.002
0.001
0.001
0.001
0.001
0.005
0.013
0.030
0.028
0.022
0.020
0.019
0.018
0.017
0.018
0.018
0.018
0.019
0.021
Mag
0.994
0.993
0.992
0.996
0.999
0.995
0.996
0.998
0.997
0.997
0.993
0.991
0.989
0.987
0.993
0.989
0.982
0.982
0.990
0.990
0.986
0.983
0.990
0.992
0.984
0.1
Frequency
Z Source
W
Z Load
W
0.0
0.1
G
G
S
TO
W
A
Z Source
860 MHz
0.2
V
DD
= 28 V, I
DQ
= 1.8 A Total, P
OUT
= 165 W
Z
0
= 50
W
Ang
-177
-177
-178
-179
-179
-179
-179
-180
-180
180
180
179
179
179
179
179
179
178
178
178
178
178
177
178
178
e
Test Circuit
PTF 10100
Schematic for f = 894 MHz
DUT
C1-2
C3
C4
C5
C6-7, C10, C13-14, C18
C8, C11
C9, C12, C15, C19
C16, C17, C20, C21
C22
L1. L2
R1, R2, R4, R5
R3, R6
10100
15 pF, Capacitor ATC 100 B
0.6–6.0 pF, Variable Capacitor
0.35–3.5 pF, Variable Capacitor
1–9 pF, Variable Capacitor
33 pF, Capacitor ATC 100 B
10
mF,
+10 V Tantalum
0.01
mF,
Capacitor ATC 100 B
10
mF,
+30 V Tantalum
11 pF, Capacitor ATC 100 B
4 Turn, #20 AWG, .120” I.D.
510
W
Resistor
510
W
Resistor
l
1,
l
20
l
2,
l
17
l
3,
l
16
l
4,
l
15
l
5,
l
6
l
7,
l
8
l
9,
l
10
l
11,
l
12
l
13,
l
14
Circuit Board
50
W,
.030
l
20
W,
.089
l
9.6
W,
.055
l
25
W,
.500
l
25
W,
.373
l
12.2
W,
.062
l
13.0
W,
.017
l
6.6
W,
.059
l
9.6
W,
.055
l
.028” G200,
e
r
= 4.55 @ 1 MHz,
AlliedSignal
5
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