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PTB 20003
4 Watts, 915–960 MHz
Cellular Radio RF Power Transistor
Description
The 20003 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation across the 915 to 960 MHz frequency
band. Rated at 4 Watts minimum output power, it may be used for
both CW and PEP applications. Ion implantation, nitride surface
passivation and gold metallization are used to ensure excellent device
reliability. 100% lot traceability is standard.
Specified 25 Volts
4 Watts, 915–960 MHz
Class AB Characteristics
50% Collector Efficiency at 4 Watts
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
12
10
8
6
4
2
0
0.00
Output Power (Watts)
200
03
LOT
COD
E
V
CC
= 25 V
I
CQ
= 50 mA
f = 960 MHz
0.15
0.30
0.45
0.60
0.75
Input Power (Watts)
Package 20201
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
T
STG
R
θJC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
40
50
4.0
1.7
35
0.2
–40 to +150
5.0
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98
PTB 20003
Electrical Characteristics
Characteristic
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
(100% Tested)
e
Conditions
I
B
= 0 A, I
C
= 50 mA
V
BE
= 0 V, I
C
= 50 mA
I
C
= 0 A, I
E
= 5 mA
V
CE
= 5 V, I
C
= 250 mA
Symbol
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
h
FE
Min
25
55
4
20
Typ
30
70
5
50
Max
—
—
—
120
Units
Volts
Volts
Volts
—
RF Specifications
(100% Tested)
Characteristic
Gain
(V
CC
= 25 Vdc, Pout = 4 W, I
CQ
= 50 mA, f = 960 MHz)
Collector Efficiency
(V
CC
= 25 Vdc, Pout = 4 W, I
CQ
= 50 mA, f = 960 MHz)
Intermodulation Distortion
(V
CC
= 25 Vdc, Pout = 4 W(PEP), I
CQ
= 50 mA,
f
1
= 959.999 MHz, f
2
= 960.000 MHz)
Load Mismatch Tolerance
(V
CC
= 25 Vdc, Pout = 4 W, I
CQ
= 50 mA,
f = 960 MHz—all phase angles at frequency of test)
Symbol
G
pe
η
C
IMD
Min
11
50
—
Typ
13
—
-28
Max
—
—
—
Units
dB
%
dBc
Ψ
—
—
30:1
—
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CC
= 25 Vdc, Pout = 4 W, I
CQ
= 50 mA)
Z Source
Z Load
Frequency
MHz
915
935
960
R
6.7
6.8
6.8
Z Source
jX
-1.8
-1.3
-0.7
R
6.8
6.9
7.0
Z Load
jX
15.5
16.0
17.0
2
e
Typical Performance
Gain & Efficiency vs. Frequency
(as measured in a broadband circuit)
15
14
Gain (dB)
80
70
60
Efficiency (%)
50
40
30
20
975
PTB 20003
13
12
11
10
9
900
V
CC
= 25 V
Pout = 4 W
915
930
945
960
Frequency (MHz)
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
Specifications subject to change without notice.
LF
© Ericsson Components AB 1994
EUS/KR 1301-PTB 20003 Uen Rev. D 09-28-98
3
Efficiency (%)
Gain (dB)
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