PTF 10052
35 Watts, 1.0 GHz
GOLDMOS
™
Field Effect Transistor
Description
The PTF 10052 is a 35 Watt LDMOS FET intended for large signal
amplifier applications to 1.0 GHz. It operates at 55% efficiency and
13.5 dB of gain. Nitride surface passivation and full gold metallization
ensure excellent device lifetime and reliability.
•
Performance at 960 MHz, 28 Volts
- Output Power = 35 Watts
- Power Gain = 13.5 dB Typ
- Efficiency = 55% Typ
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
100% Lot Traceability
Available in Package 20222 as PTF 10007
•
•
•
•
•
Typical Output Power & Efficiency
vs. Input Power
50
40
Output Pow er (W)
Ef ficiency (%)
100
80
60
40
20
0
0
1
2
3
Package
20235
Efficiency
B-1
234
100
52
56
991
Output Power
6
30
20
10
0
V
DD
= 28 V
I
DQ
= 300 m A
f = 960 MHz
A-12
1000
3456
9725
7
Package
20222
Input Power (Watts)
RF Specifications
(100% Tested)
Characteristic
Gain
(V
DD
= 28 V, P
OUT
= 35 W, I
DQ
= 300 mA, f = 960 MHz)
Power Output at 1 dB Compression
(V
DD
= 28 V, I
DQ
= 300 mA, f = 960 MHz)
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 35 W, I
DQ
= 300 mA, f = 960 MHz)
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 35 W, I
DQ
= 300 mA, f = 960 MHz—
all phase angles at frequency of test)
All published data at T
CASE
= 25°C unless otherwise indicated.
Symbol
G
ps
P-1dB
h
Y
Min
12.0
35
50
—
Typ
13.5
—
55
—
Max
—
—
—
10:1
Units
dB
Watts
%
—
e
1
PTF 10052
Electrical Characteristics
Characteristic
(100% Tested)
e
Conditions
Symbol
V
(BR)DSS
I
DSS
V
GS(th)
g
fs
Min
65
—
3.0
—
Typ
70
—
—
2.8
Max
—
1.0
5.0
—
Units
Volts
mA
Volts
Siemens
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= 5 mA
Drain-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 10 V, I
D
= 75 mA
V
DS
= 10 V, I
D
= 3 A
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C)
T
STG
R
qJC
Symbol
V
DSS
V
GS
T
J
P
D
Value
60
±20
200
120
0.7
–40 to +150
1.4
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
Typical Performance
P
OUT
, Gain & Efficiency
(at P-1dB)
vs. Frequency
Output Power & Efficiency
30
25
20
Efficiency (%)
70
60
50
Gain (dB)
Broadband Test Fixture Performance
20
Efficiency (%)
16
50
Gain
12
Gain (dB)
Gain
V
DD
= 28 V
I
DQ
= 300 mA
P
OUT
= 35 W
40
-30
5
20
-15
15
10
5
V
DD
= 28 V
I
DQ
= 300 mA
500
600
700
Output Pow er (W) 30
20
1000
8
0
400
800
900
4
925
930
935
940
Return Loss (dB) 10
-25
0
945 950 955 960
-35
Frequency (MHz)
Frequency (MHz)
2
Return Loss
40
Efficiency
60
e
Typical Performance
Power Gain vs. Output Power
17
16
15
14
13
12
11
0.1
1.0
10.0
100.0
-10
-20
PTF 10052
Intermodulation Distortion vs. Output Power
V
DD
= 28 V
I
DQ
= 300 m A
f
1
= 960.000 MHz
f
2
= 960.100 MHz
3rd
Power Gain (dB)
I
DQ
= 300 mA
IMD (dBc)
-30
-40
-50
-60
0
I
DQ
= 150 mA
I
DQ
= 75 mA
V
DD
= 28 V
f = 960 MHz
5th
7th
10
20
30
40
50
Output Power (Watts)
Output Power (Watts-PEP)
Output Power vs. Supply Voltage
45
120
Capacitance vs. Supply Voltage
40
100
80
60
40
20
0
Output Power (Watts)
Cds and Cgs (pF)
25
20
35
C
ds
C
rss
0
10
20
30
40
15
10
5
0
30
22
24
26
28
30
32
34
Supply Voltage (Volts)
Supply Voltage (Volts)
Bias Voltage vs. Temperature
1.03
1.02
Bias Voltage (V)
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
30
Temp. (°C)
80
130
Voltage normalized to 1.0 V
Series show current (A)
0.3
0.87
1.44
2.01
2.58
3.15
3
Crss (pF)
40
I
DQ
= 300 mA
P
OUT
= 5 W
f = 960 MHz
C
gs
V
GS
=0 V
f = 1 MHz
35
30
PTF 10052
Impedance Data
(shown for fixed-tuned broadband circuit)
V
DD
= 28 V, P
OUT
= 35 W, I
DQ
= 300 mA
D
e
Z
0
= 50
W
Z Source
Z Load
G
S
Frequency
MHz
850
900
950
1000
R
Z Source
W
jX
-2.80
-1.65
-0.30
0.88
R
1.48
1.45
1.35
1.10
Z Load
W
jX
1.55
2.30
3.40
4.15
2.60
2.60
2.68
2.70
4
e
Typical Scattering Parameters
(V
DS
= 28 V, I
D
= 2.0 A)
PTF 10052
f
(MHz)
400
420
440
460
480
500
520
540
560
580
600
620
640
660
680
700
720
740
760
780
800
820
840
860
880
900
920
940
960
980
1000
S11
Mag
0.948
0.951
0.955
0.956
0.957
0.959
0.960
0.962
0.963
0.964
0.964
0.965
0.967
0.966
0.967
0.967
0.968
0.968
0.967
0.966
0.967
0.968
0.967
0.967
0.967
0.966
0.966
0.966
0.966
0.966
0.965
S21
Ang
-167
-168
-168
-168
-168
-168
-169
-169
-169
-169
-169
-169
-169
-170
-170
-170
-170
-170
-170
-170
-170
-170
-170
-170
-170
-170
-171
-171
-171
-171
-171
S12
Ang
33
32
30
29
28
27
26
25
24
22
22
21
21
20
19
18
18
17
17
17
16
16
15
15
14
14
14
14
13
13
12
S22
Ang
-37
-37
-37
-36
-38
-35
-34
-30
-29
-28
-23
-20
-13
-6
3
8
21
25
33
44
51
55
59
67
68
73
75
79
81
83
86
Mag
3.668
3.403
3.161
2.943
2.745
2.575
2.421
2.282
2.151
2.024
1.907
1.806
1.72
1.636
1.558
1.483
1.413
1.345
1.281
1.228
1.179
1.134
1.088
1.039
0.993
0.957
0.922
0.890
0.859
0.827
0.794
Mag
0.006
0.005
0.005
0.005
0.004
0.004
0.004
0.004
0.003
0.003
0.003
0.002
0.002
0.002
0.002
0.002
0.002
0.002
0.002
0.002
0.002
0.002
0.002
0.003
0.003
0.003
0.003
0.003
0.004
0.004
0.004
Mag
0.858
0.866
0.877
0.886
0.892
0.898
0.903
0.907
0.911
0.913
0.919
0.925
0.929
0.929
0.929
0.928
0.930
0.932
0.935
0.937
0.938
0.939
0.938
0.938
0.938
0.941
0.943
0.941
0.942
0.943
0.942
Ang
-149
-150
-151
-152
-152
-153
-153
-154
-155
-155
-156
-156
-156
-157
-157
-157
-158
-158
-159
-159
-159
-159
-160
-160
-160
-161
-161
-161
-161
-161
-162
Test Circuit
Parts Layout (not to scale)
5
单片机
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