PTF 10107
5 Watts, 2.0 GHz
GOLDMOS
®
Field Effect Transistor
Description
The PTF 10107 is a 5–watt
GOLDMOS
FET intended for large signal
applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with
11 dB gain. Nitride surface passivation and full gold metallization
ensure excellent device lifetime and reliability.
•
Guaranteed Performance at 1.99 GHz, 26 V
- Output Power = 5 Watts Min
- Power Gain = 11 dB Min
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
Excellent Thermal Stability
100% Lot Traceability
•
•
•
•
•
Typical Output Power & Efficiency
vs. Input Power
8
100
Output Pow er
Efficiency
60
Efficiency (%)
X
80
Output Power (Watts)
7
6
5
4
3
2
1
0
0.0
A-1
101
234
07
569
845
V
DD
= 26 V
I
DQ
= 70 mA
f = 2.0 GHz
0.1
0.2
0.3
0.4
40
20
0
0.5
Input Power (Watts)
Package 20244
RF Specifications
(100% Tested)
Characteristic
Gain
(V
DD
= 26 V, P
OUT
= 1 W, I
DQ
= 70 mA, f = 1.93, 1.99 GHz)
Power Output at 1 dB Compression
(V
DD
= 26 V, I
DQ
= 70 mA, f = 1.99 GHz)
Drain Efficiency
(V
DD
= 26 V, P
OUT
= 5 W, I
DQ
= 70 mA, f = 1.99 GHz)
Load Mismatch Tolerance
(V
DD
= 26 V, P
OUT
= 5 W, I
DQ
= 70 mA, f = 1.99 GHz
—all phase angles at frequency of test)
All published data at T
CASE
= 25°C unless otherwise indicated.
Symbol
G
ps
P-1dB
h
D
Y
Min
11
5
40
—
Typ
—
6.5
—
—
Max
—
—
—
10:1
Units
dB
Watts
%
—
e
1
PTF 10107
Electrical Characteristics
Characteristic
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Forward Transconductance
(100% Tested)
e
Conditions
V
GS
= 0 V, I
D
= 20 mA
V
DS
= 26 V, V
GS
= 0 V
V
DS
= 10 V, I
D
= 75 mA
V
DS
= 10 V, I
D
= 2 A
Symbol
V
(BR)DSS
I
DSS
V
GS(th)
g
fs
Min
65
—
3.0
—
Typ
—
—
—
0.8
Max
—
1.0
5.0
—
Units
Volts
mA
Volts
Siemens
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation at
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C)
T
STG
R
qJC
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
±20
200
39
0.22
–40 to +150
4.5
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
Typical Performance
P
OUT
, Gain & Efficiency
(at P-1dB)
vs. Frequency
15
Gain & Output Power
x
13
11
9
7
5
1750
Output Pow er
1800
1850
1900
1950
2000
Gain (dB)
Efficiency (%)
65
55
14
Gain (dB)
12
50
Efficiency (%)
40
- 30
5
-15
20
10
-25
Return Loss (dB)
2
1925
1950
1975
0
-35
2000
Broadband Test Fixture Performance
Efficiency
Return Loss
60
Efficiency
Gain
45
35
25
15
2050
10
8
6
4
V
DD
= 26 V
I
DQ
= 70 mA
V
CC
= 26 V
I
DQ
= 70 mA
P
OUT
= 4 W
Frequency (MHz)
Frequency (MHz)
2
e
Output Power vs. Supply Voltage
10
0
-10
PTF 10107
Intermodulation Distortion vs. Output Power
V
DD
= 26 V
I
DQ
= 70 mA
f
1
= 1999.9 MHz
f
2
= 2000.0 MHz
IM3
IM5
IM7
Output Power (Watts)
8
6
4
2
0
22
24
26
28
30
IMD (dBc)
-20
-30
-40
-50
-60
-70
0
I
DQ
= 70 mA
f = 2.0 GHz
1
2
3
4
5
6
7
Supply Voltage (Volts)
Output Power (Watts-PEP)
Power Gain vs. Output Power
14
13
Capacitance vs. Supply Voltage
18
6
15
12
9
I
DQ
= 70 mA
I
DQ
= 40 mA
Cds and Cgs (pF)
x
C
gs
C
ds
Power Gain (dB)
V
GS
= 0 V
f = 1 MHz
5
11
10
9
8
0.1
1.0
10.0
3
2
I
DQ
= 20 mA
V
DD
= 26 V
f = 2.0 GHz
6
3
0
0
10
20
30
40
C
rss
1
0
Output Power (Watts)
Supply Voltage (Volts)
Bias Voltage vs. Temperature
1.03
1.02
Bias Voltage (V)
1.01
1
0.99
0.98
0.97
0.96
-20
30
Temp. (°C)
80
130
0.05
0.145
0.24
0.335
0.43
0.525
Voltage normalized to 1.0 V
Series show current (A)
3
Crss (pF)
12
4
PTF 10107
Impedance Data
V
DD
= 26 V, P
OUT
= 5 W, I
DQ
= 70 mA
D
e
Z
0
= 50
W
Z Source
Z Load
G
S
Frequency
GHz
1.75
1.80
1.85
1.90
1.95
2.00
2.05
R
Z Source
W
jX
-1.7
-2.0
-2.4
-3.1
-3.8
-4.1
-4.6
R
3.2
3.4
3.4
3.7
3.5
3.0
2.7
Z Load
W
jX
2.4
1.7
0.9
0.5
0.0
-0.4
-0.8
6.20
6.80
7.10
7.05
7.00
6.70
6.00
Typical Scattering Parameters
(V
DS
= 26 V, I
D
= 300 mA)
f
(MHz)
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
S11
Mag
0.874
0.837
0.844
0.850
0.858
0.864
0.868
0.870
0.879
0.887
0.898
0.905
0.911
0.914
0.916
0.918
0.923
0.928
0.933
0.937
0.935
0.934
S21
Ang
-58
-70
-100
-118
-130
-139
-146
-153
-158
-162
-167
-171
-174
-178
179
176
173
171
168
165
162
159
S12
Ang
137
129
106
89
77
66
56
48
40
33
26
20
14
8
2
-3
-8
-13
-18
-23
-28
-33
4
S22
Ang
46
37
21
9
-1
-8
-13
-15
-13
-2
19
48
66
74
77
79
79
78
76
74
71
68
Mag
24.1
21.8
17.5
14.1
11.5
9.44
7.86
6.61
5.65
4.86
4.24
3.73
3.30
2.92
2.61
2.35
2.14
1.95
1.79
1.65
1.53
1.43
Mag
0.009
0.010
0.012
0.013
0.012
0.011
0.009
0.008
0.006
0.004
0.004
0.004
0.005
0.006
0.008
0.009
0.011
0.013
0.015
0.017
0.018
0.020
Mag
0.770
0.737
0.710
0.709
0.723
0.749
0.767
0.782
0.801
0.815
0.837
0.854
0.870
0.882
0.892
0.898
0.907
0.914
0.920
0.925
0.929
0.934
Ang
-35
-42
-62
-77
-88
-98
-108
-116
-123
-130
-136
-141
-147
-152
-156
-160
-164
-168
-172
-176
-179
178
e
Test Circuit
PTF 10107
Block Diagram for f = 1.96 GHz
DUT
l
1
l
2
l
3
l
4
l
5
l
6
PTF 10107
0.303
l
1.99 GHz
0.146
l
1.99 GHz
0.076
l
1.99 GHz
0.072
l
1.99 GHz
0.060
l
1.99 GHz
0.352
l
1.99 GHz
LDMOS RF FET
Microstrip 50
W
Microstrip 11.6
W
Microstrip 17.7
W
Microstrip 13.5
W
Microstrip 17.7
W
Microstrip 50
W
C1
C2, C3, C6, C9
C4, C10
C5
C7
C8
J1, J2
L1
L2
R1, R2
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3 Turns, 20 AWG, .120 I. D.
N/A
Resistor, 220 ohm, 1/4W Digi-Key QBK-ND
0.031" Thick,
e
r
= 4.0, 2 0z copper, G200 AlliedSignal
5
嵌入式系统
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