PTF 10015
50 Watts, 300–960 MHz
GOLDMOS
™
Field Effect Transistor
Description
The PTF 10015 is a 50 Watt LDMOS FET intended for large signal
amplifier applications from 300 to 960 MHz. It operates at 55%
efficiency and 13.0 dB of gain. Nitride surface passivation and full
gold metallization are used to ensure excellent device lifetime and
reliability.
Features
•
Performance at 960 MHz, 28 Volts
- Output Power = 50 Watts
- Power Gain = 13.0 dB Typ, 12.0 dB Min
- Efficiency = 55% Typ
Full Gold Metallization
Silicon Nitride Passivated
Excellent Thermal Stability
Back Side Common Source
100% lot traceability
Available in Package 20222 as PTF 10031
•
•
•
•
•
•
Typical Power Out & Efficiency vs. Power In
70
60
90
80
70
Efficiency (%)
40
30
20
10
0
0
1
2
3
4
60
50
A-1
234
569
914
50
V
DD
= 28 V
I
DQ
= 380 mA
f = 960 MHz
40
30
20
Drain Efficiency
Output Power
Output Pow er (W)
100
15
Package
20235
A-12
1003
1
3456
9743
Package
20222
Input Power (Watts)
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
C
= 70°C)
All published data is at T
C
= 25°C unless otherwise indicated.
T
STG
R
qJC
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
±20
200
175
1.0
-65 to +150
1.0
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
e
1
PTF 10015
Electrical Characteristics
Characteristic
(100% Tested)
e
Conditions
Symbol
V
(BR)DSS
I
DSS
V
GS(th)
g
fs
Min
65
—
3.0
2.0
Typ
—
—
—
2.8
Max
—
1.0
5.0
—
Units
Volts
mA
Volts
Siemens
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= 25 mA
Drain-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 10 V, I
D
= 75 mA
V
DS
= 10 V, I
D
= 3 A
RF Specifications
(100% Tested)
Characteristic
Common Source Power Gain
(V
DD
= 28 V, P
OUT
= 50 W, I
DQ
= 380 mA, f = 960 MHz)
Power Output at 1 dB Compression
(V
DD
= 28 V, I
DQ
= 380 mA, f = 960 MHz)
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 50 W, I
DQ
= 380 mA, f = 960 MHz)
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 50 W, I
DQ
= 380 mA, f = 960 MHz—
all phase angles at frequency of test)
Symbol
G
ps
P-1dB
h
Y
Min
12.0
50
50
—
Typ
13.0
—
55
—
Max
—
—
—
10:1
Units
dB
Watts
%
—
Typical Performance
Gain vs. Power Output
16
15
-25
Intermodulation Distortion vs. Power Output
-15
V
DD
= 28 V
I
DQ
= 380 mA
f
1
= 950.000 MHz
f
2
= 950.100 MHz
5th
-45
7th
3rd
Gain (dB)
13
12
11
10
0
10
20
30
40
50
60
70
IMD (dB)
14
-35
V
DD
= 28 V
I
DQ
= 380 mA
f = 960 MHz
-55
0
10
20
30
40
50
60
70
Power Output (Watts)
Output Power (Watts PEP)
2
e
Output Power vs. Supply Voltage
60
PTF 10015
Broadband Gain vs. Frequency
15
Output Power (Watts)
55
14
Gain (dB)
50
13
V
DD
= 28 V
12
45
I
DQ
= 380 mA
f = 960 MHz
I
DQ
= 380 mA
P
OUT
= 50 W
930
935
940
945
950
955
960
40
22
24
26
28
30
32
34
11
925
Drain-Source Voltage (Volts)
Frequency (MHz)
Capacitance vs. Supply Voltage
160
140
18
Bias Voltage vs. Temperature
1.03
1.02
Bias Voltage (V)
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
30
Temp. (°C)
80
130
0.43
1.25
2.08
2.9
3.71
4.53
Cds & Cgs (pF)
120
100
80
60
40
20
0
0
10
C
gs
V
GS
= 0 V
f = 1 MHz
16
14
12
10
Voltage normalized to 1.0 V
Series show current (A)
C
ds
C
rss
20
30
40
8
6
4
2
Supply Voltage (Volts)
Impedance Data
(circuit optimized at 960 MHz)
V
DD
= 28 V, P
OUT
= 50 W, I
DQ
= 380 mA
D
Crss (pF)
Z
0
= 50
W
Z Source
Z Load
G
S
Frequency
MHz
850
900
950
1000
R
Z Source
W
jX
-1.22
-0.44
+0.67
+1.30
R
1.38
1.20
1.08
0.96
Z Load
W
jX
1.00
1.65
2.33
2.90
3
2.50
2.45
2.40
2.40
PTF 10015
Typical Scattering Parameters
(V
DS
= 28 V, I
D
= 1.0 A)
e
S11
S21
Ang
-153
-160
-163
-164
-165
-165
-164
-164
-163
-163
-163
-163
-164
-164
-165
-166
-167
-168
-170
-171
-173
-174
-176
-177
-178
-179
180
179
179
179
179
179
f
(MHz)
40
60
80
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
1050
1100
1150
1200
1250
1300
1350
1400
1450
1500
S12
Ang
93
85
80
76
65
58
51
45
41
36
33
30
27
26
22
21
19
16
14
12
14
8
3
6
1
4
-5
-5
-5
-3
5
-8
S22
Ang
3
1
-6
-13
-18
-23
-31
-31
-28
-33
-36
-52
-46
-53
-27
-18
-13
14
-1
30
53
59
56
69
57
65
56
61
52
59
58
62
Mag
0.883
0.878
0.876
0.884
0.904
0.915
0.934
0.947
0.962
0.975
0.974
0.977
0.979
0.985
0.981
0.980
0.975
0.973
0.972
0.969
0.966
0.969
0.969
0.970
0.970
0.970
0.971
0.971
0.973
0.973
0.972
0.965
Mag
33.0
21.8
16.1
12.8
8.21
5.67
4.36
3.41
2.78
2.30
1.90
1.65
1.44
1.28
1.14
1.01
0.924
0.809
0.749
0.656
0.609
0.564
0.526
0.450
0.405
0.383
0.351
0.330
0.308
0.255
0.219
0.210
Mag
0.014
0.013
0.012
0.012
0.011
0.010
0.010
0.010
0.008
0.008
0.006
0.006
0.005
0.004
0.003
0.004
0.003
0.001
0.003
0.003
0.002
0.003
0.004
0.004
0.005
0.005
0.005
0.005
0.005
0.006
0.006
0.006
Mag
0.527
0.533
0.553
0.574
0.638
0.694
0.769
0.792
0.837
0.873
0.874
0.912
0.916
0.925
0.933
0.933
0.936
0.946
0.939
0.946
0.948
0.945
0.949
0.955
0.953
0.952
0.959
0.957
0.963
0.965
0.965
0.957
Ang
-143
-148
-150
-148
-148
-149
-148
-149
-150
-151
-151
-152
-154
-154
-156
-157
-158
-160
-160
-162
-164
-164
-167
-167
-168
-169
-170
-170
-171
-171
-171
-172
4
e
Test Circuit
PTF 10015
Test Circuit Schematic for f = 960 MHz
DUT
l
1
l
2
l
3
l
4
l
5
l
6
C1, C5
C2, C4, C6, C9
C3
C7
C8
L1
R1, R2, R3
Circuit Board
PTF 10015
.140
l
960 MHz
Microstrip 50
W
.270
l
960 MHz
Microstrip 50
W
.185
l
960 MHz
Microstrip 6.2
W
.225
l
960 MHz
Microstrip 11.0
W
.040
l
960 MHz
Microstrip 50
W
.330
l
960 MHz
Microstrip 50
W
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0.01
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0.1
mF,
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100
mF,
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4 Turn, #20 AWG, .120” I.D.
220
W,
1/4 W Resistor
.028" Dielectric Thickness,
e
r
= 4.0, AlliedSignal, G200,
2 oz. copper
Placement Diagram (not to scale)
5
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