PTF 10020
125 Watts, 860–960 MHz
GOLDMOS
™
Field Effect Transistor
Description
The PTF 10020 is an internally matched, 125 Watt LDMOS FET
intended for large signal amplifier applications from 860 to 960 MHz.
Nitride surface passivation and gold metallization ensure excellent
device lifetime and reliability.
•
•
•
•
•
•
INTERNALLY MATCHED
Performance at 960 MHz, 28 Volts
- Output Power = 125 Watts
- Power Gain = 12.5 dB Typ
- Efficiency = 55% Typ
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
100% Lot Traceability
Typical Output Power vs. Input Power
150
960 MHz
Output Power (Watts)
125
100
75
860 MHz
50
900 MHz
A-1
100
20
234
569
813
V
DD
= 28 V
25
0
0
1
2
3
4
5
6
7
I
DQ
= 1.4 A Total
Input Power (Watts)
Package 20240
RF Specifications
(100% Tested)
Characteristic
Gain
(V
DD
= 28 V, P
OUT
= 125 W, I
DQ
= 1.4 A Total, f = 960 MHz)
Power Output at 1 dB Compression
(V
DD
= 28 V, I
CQ
= 1.4 A Total, f = 960 MHz)
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 125 W, I
DQ
= 1.4 A Total, f = 960 MHz)
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 125 W(PEP), I
DQ
= 1.4 A Total,
f = 959.9, 960 MHz—all phase angles at frequency of test)
All published data at T
CASE
= 25°C unless otherwise indicated.
P-1dB
h
Y
125
50
—
130
55
—
—
—
10:1
Watts
%
—
Symbol
G
ps
Min
11.0
Typ
12.5
Max
—
Units
dB
e
1
PTF 10020
Electrical Characteristics
Characteristic
Conditions
Symbol
V
(BR)DSS
I
DSS
V
GS(th)
g
fs
e
(100% Tested—characteristics, conditions and limits shown per side)
Min
65
—
3.0
—
Typ
—
—
4.3
2.5
Max
—
1.0
5.0
—
Units
Volts
mA
Volts
Siemens
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= 5 mA
Drain-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 10 V, I
D
= 75 mA
V
DS
= 10 V, I
D
= 3 A
Maximum Ratings
Parameter
Drain-Source Voltage
(1)
Gate-Source Voltage
(1)
Operating Junction Temperature
Total Device Dissipation at
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C)
(1)
per side
Symbol
V
DSS
V
GS
T
J
P
D
T
STG
R
qJC
Value
65
±20
200
290
1.67
–40 to +150
0.6
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
Typical Performance
Broadband Test Fixture Performance
20
Efficiency %
16
60
50
40
Efficiency
Broadband Test Fixture Performance
20
18
16
Efficiency %
60
50
40
- 30
5
-15
20
-25
10
-35
0
960
Gain (dB)
Gain
12
Gain (dB)
14
12
10
8
6
4
925
Gain
Return Loss (dB)
- 30
5
-15
20
-25
10
Return Loss
I
DQ
= 1.4 A Total
8
I
DQ
= 1.4 A Total
P
OUT
= 125 W
Return Loss
P
OUT
= 125 W
4
860
870
880
890
-35
0
900
930
935
940
945
950
955
Frequency (MHz)
Frequency (MHz)
2
Return Loss (dB)
V
DD
= 28 V
V
DD
= 28 V
Efficiency
e
Typical Performance
Typical P
OUT
, Gain & Efficiency
(at P-1dB)
vs. Frequency
Output Power & Efficiency
15
14
Output Power (W )
150
130
110
PTF 10020
Efficiency vs. Output Power
80
70
Efficiency (%)
60
50
40
30
20
10
0
30
50
70
90
110
130
Gain
13
12
11
10
860
Gain (dB)
V
DD
= 28 V
I
DQ
= 1.4 A Total
Efficiency (%)
90
70
V
DD
= 28 V
I
DQ
= 1.4 A Total
f = 960 MHz
880
900
920
940
50
960
Frequency (MHz)
Output Power (Watts)
Output Power vs. Supply Voltage
150
Intermodulation Distortion vs. Output Power
-10
V
DD
= 28 V
Output Power (Watts)
130
110
90
70
50
20
22
24
26
28
30
32
34
-20
I
DQ
= 1.4 A Total
f
1
= 941.9 MHz
f
2
= 942.0 MHz
3rd order
I
DQ
= 1.4 A Total
f = 960 MHz
Pin = 5.4 W
IMD (dBc)
-30
-40
5th
-50
7th
-60
20
30
40
50
60
70
80
90
100 110 120
V
DS
, Supply Voltage
Output Power (Watts-PEP)
Power Gain vs. Output Power
15
180
160
Capacitance vs. Voltage
(one side)
*
V
GS
= 0 V
f = 1 MHz
27
24
21
18
15
Cds and Cgs (pF)
14
120
100
80
60
40
20
Gain (dB)
13
I
DQ
= 700 mA
I
DQ
= 350 mA
C
ds
C
rss
0
10
20
30
40
12
9
6
3
0
12
11
1
10
100
1000
0
Output Power (W)
Supply Voltage (Volts)
*This part is internally matched. Measurements of the finished
product will not yield these figures.
3
Crss (pF)
I
DQ
= 1.4 A
V
DD
= 28 V
f = 960 MHz
140
C
gs
PTF 10020
Typical Performance
Bias Voltage vs. Temperature
1.04
1.02
0.40
e
Voltage normalized to 1.0 V
Series show current (A)
Bias Voltage (V)
1.00
0.98
0.96
0.94
-20
30
Temp. (°C)
80
1.32
2.25
3.17
4.09
5.02
130
Impedance Data
(V
DD
= 28 V, I
DQ
= 1.4 A, P
OUT
= 125 W)
Z Source
D
Z Load
Z
0
= 50
W
G
G
S
D
Frequency
MHz
835
860
885
910
935
960
985
R
Z Source
W
jX
-8.9
-9.3
-9.8
-11.8
-12.9
-12.8
-11.0
R
2.3
2.3
2.3
2.2
2.2
2.2
2.2
1.7
1.9
1.9
1.9
2.5
2.2
1.8
Z Load
W
jX
-1.3
-0.9
-1.0
-1.2
-1.3
-2.1
-2.2
4
e
Typical Scattering Parameters
(one side only)
(V
DS
= 28 V, I
D
= 4 A)
PTF 10020
f
(MHz)
800
810
820
830
840
850
860
870
880
890
900
910
920
930
940
950
960
970
980
990
1000
S11
Mag
0.974
0.974
0.974
0.974
0.972
0.972
0.971
0.969
0.968
0.966
0.964
0.963
0.961
0.958
0.956
0.953
0.95
0.946
0.942
0.937
0.933
S21
Ang
176
175.9
175.7
175.6
175.4
175.4
175.2
175
174.9
174.8
174.7
174.6
174.3
174.2
174.1
174
173.8
173.8
173.7
173.6
173.6
S12
Ang
-10.6
-11.5
-12.7
-13.6
-14.8
-16
-16.9
-18
-19.1
-20.2
-21.4
-23
-24.6
-26.3
-28.2
-30.3
-32.7
-35.4
-38.1
-41
-44
S22
Ang
50.9
49
52.9
53.4
52.6
54.9
56.1
52.5
53.4
56.2
58.1
55.5
57.7
57
56.7
58.7
60.2
60
59.5
62
62.2
Mag
0.657
0.66
0.662
0.666
0.669
0.672
0.674
0.679
0.686
0.695
0.705
0.716
0.729
0.743
0.757
0.774
0.791
0.807
0.821
0.838
0.853
Mag
0.002
0.002
0.002
0.002
0.002
0.002
0.002
0.002
0.002
0.002
0.002
0.002
0.002
0.002
0.002
0.002
0.002
0.002
0.002
0.002
0.002
Mag
0.97
0.971
0.971
0.972
0.972
0.972
0.972
0.972
0.973
0.975
0.977
0.977
0.976
0.977
0.978
0.979
0.979
0.981
0.982
0.983
0.983
Ang
-172
-172.1
-172.3
-172.4
-172.5
-172.7
-172.8
-172.8
-173
-173.1
-173.2
-173.4
-173.6
-173.6
-173.8
-174
-173.9
-174.1
-174.2
-174.3
-174.4
Test Circuit
Schematic for f = 960 MHz
DUT
C1-2
C3
C4
C5
C6-7, C10, C13-14, C18
C8, C11
C9, C12, C15, C19
C16, C17, C20, C21
L1. L2
R1, R2, R4, R5
R3, R6
PTF 10020
15 pF, Capacitor ATC 100 B
0.35–3.5 pF, Variable Capacitor
7.5 pF, Capacitor ATC 100 A
1–9 pF, Variable Capacitor
33 pF, Capacitor ATC 100 B
10
mF,
+10 V Electrolytic Capacitor
0.01
mF,
Capacitor ATC 100 B
10
mF,
+30 V Electrolytic Capacitor
4 Turn, #20 AWG, .120” I.D.
1.0 K,
W
Resistor
5.1 K, 1/4
W
Resistor
5
l
1,
l
20
l
2,
l
19
l
3,
l
18
l
4,
l
17
l
5,
l
6
l
7,
l
10
l
8,
l
9
l
11,
l
12
l
13,
l
14
l
15,
l
16
Circuit Board
50
W,
.030
l
20
W,
.080
l
32
W,
.191
l
25
W,
.500
l
25
W,
.091
l
7
W,
.056
l
13.0
W,
.017
l
13.0
W,
.017
l
7.0
W,
.093
l
10.2
W,
.030
l
.028" Dielectric Thickness,
e
r
= 4.0,
AlliedSignal, G200, 2 oz. copper
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