GaAlAs/GaAs HIGH POWER SIDE LOOK PACKAGE
INFRARED EMITTING DIODE
Description
The MIE-114A1 is a GaAs infrared emitting diode
molded in clear, lensed side looking package .
The MIE-114A1 provides a broad range of
intensity selection .
5.72±0.2
(.225±.008)
4.45±0.20
(.175±.008)
2.22
(.087)
(.087)
1.22±0.10
(.048±.004)
MIE-114A1
Package Dimensions
Unit: mm ( inches )
0.76±0.10
(.030±.008)
1.55±0.02
(.061±.008)
12.7 MIN.
(.500)
Features
l
CATHODE
Selected to specific on-line intensity and
1.0 MIN.
(.040)
2.54 NOM.
(.100)
SEE NOTE 3
0.5 TYP.
(.020)
radiant intensity ranges
l
Low cost, plastic side looking package
l
Mechanically and spectrally matched to
the MID-11422 of phototransistor .
C
A
NOTES :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
@ T
A
=25
o
C
Parameter
Power Dissipation
Peak Forward Current(300pps,10µs pulse)
Continuos Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
75
1
50
5
-55
o
C to +100
o
C
-55
o
C to +100
o
C
260
o
C for 5 seconds
Unit
mW
A
mA
V
Unity Opto Technology Co., Ltd.
02/04/2002
MIE-114A1
Optical-Electrical Characteristics
@ T
A
=25
o
C
Parameter
Radiant Incidance
Forward Voltage
Reverse Current
Peak Wavelength
Spectral Bandwidth
View Angle
Test Conditions
I
F
=20mA
I
F
=20mA
V
R
=5V
I
F
=20mA
I
F
=20mA
I
F
=20mA
Symbol
Ee
V
F
I
R
λp
∆λ
2θ
1/2
Min.
-
-
-
-
-
-
Typ .
0.8
1.2
-
940
50
80
Max.
-
1.35
100
-
-
-
Unit
mW/cm
2
V
µA
nm
nm
deg .
Typical Optical-Electrical Characteristic Curves
Relative Radiant Intensity
1
0.5
0
840
880
920
960
1000
1040
Wavelength (nm)
FIG.1 SPECTRAL DISTRIBUTION
Relative Radiant Intensity
0
1.2
1.6
2.0
2.4
2.8
Forward Current (mA)
100
80
60
40
20
0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
o
60
Forward Voltage (V)
FIG.2 FORWARD CURRENT VS.
FORWARD VOLTAGE
Relative Radiant Intensity
5
4
3
2
1
0
0
20
40
60
80
100
Ambient Temperature T
A
( C)
FIG.3 RELATIVE RADIANT INTENSITY
VS. AMBIENT TEMPERATURE
0° 10°
20°
30°
40°
1.0
0.9
0.8
0.5 0.3 0.1
0.2 0.4 0.6
50°
60°
70°
80°
90°
Relative Radiant Intensity
Forward Current (mA)
FIG.4 RELATIVE RADIANT INTENSITY
VS. FORWARD CURRENT
FIG.5 RADIATION DIAGRAM
Unity Opto Technology Co., Ltd.
02/04/2002
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