ANSALDO
Ansaldo Trasporti s.p.a.
Unita' Semiconduttori
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Fax Int. +39/(0)10 6442510
Tx 270318 ANSUSE I -
FAST RECOVERY DIODE
ARF675
Repetitive voltage up to
Mean forward current
Surge current
4500
V
1085
A
15
kA
FINAL SPECIFICATION
feb 97 - ISSUE : 03
Symbol
Characteristic
Conditions
Tj
[°C]
Value
Unit
BLOCKING
V
RRM
V
RSM
I
RRM
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak reverse current
V=VRRM
125
125
125
4500
4600
80
V
V
mA
CONDUCTING
I
I
I
F (AV)
Mean forward current
Mean forward current
Surge forward current
I² t
Forward voltage
Threshold voltage
Forward slope resistance
180° sin ,50 Hz, Th=55°C, double side cooled
180° square,50 Hz,Th=55°C,double side cooled
Sine wave, 10 ms
reapplied reverse voltage up to 50% VRSM
125
1085
1090
15
1125 x1E3
A
A
kA
A²s
V
V
mohm
F (AV)
FSM
I² t
V
FM
V
F(TO)
r
F
Forward current =
1570 A
25
125
125
3.4
1.70
0.700
SWITCHING
t rr
Q rr
I rr
s
V
FR
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Softness (s-factor), min
Peak forward recovery
di/dt=
400 A/µs
125
I F = 1000 A
di/dt=
VR =
250 A/µs
100 V
600
0.5
38
V
A
125
5.6
1700
µs
µC
MOUNTING
R
th(j-h)
T
F
j
Thermal impedance
Operating junction temperature
Mounting force
Mass
Junction to heatsink, double side cooled
18
-30 / 125
22.0 / 24.5
300
°C/kW
°C
kN
g
ORDERING INFORMATION : ARF675 S 45
standard specification
VRRM/100
ARF675 FAST RECOVERY DIODE
FINAL SPECIFICATION
feb 97 - ISSUE : 03
ANSALDO
SWITCHING CHARACTERISTICS
FORWARD RECOVERY VOLTAGE
70
60
Tj = 125 °C
50
VFR [V]
40
30
Tj = 25 °C
I
F
V
FR
20
V
F
10
0
0
200
400
600
di/dt [A/µs]
800
1000
1200
REVERSE RECOVERY CHARGE
Tj = 125 °C
REVERSE RECOVERY CURRENT
Tj = 125 °C
2000
1800
1600
1400
Qrr [µC]
1200
1000
800
600
400
200
0
0
100
200
di/dt [A/µs]
300
1000 A
750
700
650
600
550
500
1000 A
500 A
250 A
500 A
250 A
450
Irr [A]
400
400
350
300
250
200
150
100
50
0
0
100
200
di/dt [A/µs]
300
400
ta = Irr / (di/dt)
tb = trr - ta
I
F
d i/d t
ta
tb
Softness (s factor) s = tb / ta
Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 )
Irr
Vr
ARF675 FAST RECOVERY DIODE
FINAL SPECIFICATION
feb 97 - ISSUE : 03
ANSALDO
FORWARD CHARACTERISTIC
Tj = 125 °C
SURGE CHARACTERISTIC
Tj = 125 °C
3500
3000
Forward Current [A]
2500
2000
1500
1000
500
0
0.6
1.6
2.6
3.6
4.6
Forward Voltage [V]
ITSM [kA]
16
14
12
10
8
6
4
2
0
1
10
n° cycles
100
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
18.0
16.0
14.0
Zth j-h [°C/kW]
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0.001
0.01
0.1
t[s]
1
10
100
Distributed by
All the characteristics given in this data sheet are guaranteed only with
clamping force, cleaned and lubricated heatsink, surfaces with flatness <
and roughness < 2 µm.
In the interest of product improvement ANSALDO reserves the right to
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over
background) and characteristics is reported.
uniform
.03 mm
change
shaded
嵌入式系统
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