ANSALDO
Ansaldo Trasporti s.p.a.
Unita' Semiconduttori
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Fax Int. +39/(0)10 6442510
Tx 270318 ANSUSE I -
FAST RECOVERY DIODE
ARF648
Repetitive voltage up to
Mean forward current
Surge current
2500
V
2510
A
30
kA
FINAL SPECIFICATION
feb 00 - ISSUE : 01
Symbol
Characteristic
Conditions
Tj
[°C]
Value
Unit
BLOCKING
V
V
I
RRM
RSM
RRM
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak reverse current
V=VRRM
150
150
150
2500
2600
100
V
V
mA
CONDUCTING
I
I
I
F (AV)
Mean forward current
Mean forward current
Surge forward current
I² t
Forward voltage
Threshold voltage
Forward slope resistance
180° sin ,50 Hz, Th=55°C, double side cooled
180° square,50 Hz,Th=55°C,double side cooled
Sine wave, 10 ms
reapplied reverse voltage up to 50% VRSM
150
2510
2570
30
4500 x1E3
A
A
kA
A²s
V
V
mohm
F (AV)
FSM
I² t
V
V
r
FM
F(TO)
F
Forward current =
1500 A
25
150
150
1,4
0,85
0,300
SWITCHING
t rr
Q rr
I rr
s
V
FR
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Softness (s-factor), min
Peak forward recovery
I F = 1000 A
di/dt=
VR =
250 A/µs
50 V
150
5,0
1000
600
0,5
µs
µC
A
di/dt=
100 A/µs
150
4
V
MOUNTING
R
th(j-h)
T
F
j
Thermal impedance
Operating junction temperature
Mounting force
Mass
Junction to heatsink, double side cooled
14
-30 / 150
35.0 / 40.0
850
°C/kW
°C
kN
g
ORDERING INFORMATION : ARF648 S 25
standard specification
VRRM/100
ARF648 FAST RECOVERY DIODE
FINAL SPECIFICATION
feb 00 - ISSUE : 01
ANSALDO
FORWARD CHARACTERISTIC
Tj = 150 °C
SURGE CHARACTERISTIC
Tj = 150 °C
8000
7000
6000
Forward Current [A]
5000
ITSM [kA]
0,6
1,1
1,6
2,1
2,6
3,1
3,6
35
30
25
20
15
10
5
0
1
10
n° cycles
100
Forward Voltage [V]
4000
3000
2000
1000
0
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
16,0
14,0
12,0
Zth j-h [°C/kW]
10,0
8,0
6,0
4,0
2,0
0,0
0,001
0,01
0,1
t[s]
1
10
100
Distributed by
All the characteristics given in this data sheet are guaranteed only with
clamping force, cleaned and lubricated heatsink, surfaces with flatness <
and roughness < 2 µm.
In the interest of product improvement ANSALDO reserves the right to
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over
background) and characteristics is reported.
uniform
.03 mm
change
shaded
ARF648 FAST RECOVERY DIODE
FINAL SPECIFICATION
feb 00 - ISSUE : 01
ANSALDO
SWITCHING CHARACTERISTICS
FORWARD RECOVERY VOLTAGE
30
25
20
VFR [V]
Tj = 150 °C
15
Tj = 25 °C
I
F
V
FR
10
5
V
F
0
0
200
400
600
di/dt [A/µs]
800
1000
1200
REVERSE RECOVERY CHARGE
Tj=150°C
1400
2000 A
REVERSE RECOVERY CURRENT
Tj=150°C
800
750
700
650
600
550
500
450
400
350
300
250
200
150
100
50
0
0
100
200
di/dt [A/µs]
300
2000
A
1000A
500 A
1200
1000 A
1000
500 A
Qrr [µC]
600
400
200
0
0
100
200
di/dt [A/µs]
300
400
Irr [A]
800
400
ta = Irr / (di/dt)
tb = trr - ta
I
F
d i/d t
ta
tb
Softness (s factor) s = tb / ta
Energy dissipation during recovery Er = Vr
2)
(Qrr - Irr
ta /
Irr
Vr
ARM技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
