PRELIMINARY
SOLID STATE DEVICES, INC.
14830 Valley View Av. * La Mirada, Ca 90670
Phone: (562) 404-7855 * Fax: (562) 404-1773
SFF1310M
SFF1310Z
40 AMPS
200 VOLTS
0.050
S
N-CHANNEL
POWER MOSFET
TO-3
DESIGNER'S DATA SHEET
FEATURES:
• Rugged construction with polysilicon gate
• Low RDS (on) and high transconductance
• Excellent high temperature stability
• Very fast switching speed
• Fast recovery and superior dv/dt performance
• Increased reverse energy capability
• Low input and transfer capacitance for easy paralleling
• Hermetically sealed package
• TX, TXV, and Space Level screening available
• Replaces: SMM40N20 Type
MAXIMUM RATINGS
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current
Operating and Storage Temperature
Thermal Resistance, Junction to Case
Total Device Dissipation
@ TC = 25
o
C
@ TC = 55
o
C
SYMBOL
V
DS
V
GS
I
D
T
op
& T
stg
R
2JC
P
D
VALUE
200
±20
40
-55 to +150
0.5
250
190
o
UNIT
Volts
Volts
Amps
o
C
C/W
Watts
PACKAGE OUTLINE: TO-3
PIN OUT:
DRAIN:
SOURCE:
GATE:
PIN 1
PIN 2
PIN 3
NOTE:
All specifications are subject to change without notification.
SCDs for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0004A
SFF1310M
SFF1310Z
RATING
Drain to Source Breakdown Voltage
(VGS =0 V, ID =250:A)
Drain to Source ON State Resistance
(VGS = 10 V, 60% of Rated ID)
I
D
= 37.5A
PRELIMINARY
SOLID STATE DEVICES, INC.
14830 Valley View Av. * La Mirada, Ca 90670
Phone: (562) 404-7855 * Fax: (562) 404-1773
ELECTRICAL CHARACTERISTICS @ T
J
=25
o
C
(Unless Otherwise Specified)
SYMBOL
BV
DSS
R
DS(on)
I
D(on)
V
GS(th)
g
fs
MIN
200
-
-
50
2.0
20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
25
-
-
-
-
190
35
95
28
38
110
30
-
-
1.5
4400
800
285
MAX
-
0.050
UNIT
V
S
A
V
S(É)
ON State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10 V)
Gate Threshold Voltage
(VDS =VGS, ID = 4mA)
Forward Transconductance
(VDS > ID(on) x RDS (on) Max, IDS = 50% rated ID)
Zero Gate Voltage Drain Current
V
DS
= max rated Voltage, T
A
= 25
o
C
(V
GS
= 0V)
V
DS
= 80% rated V
DS
, T
A
= 125
o
C
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
-
4.0
-
250
1000
+100
-100
220
50
120
35
40
130
35
1.50
225
-
-
-
-
I
DSS
I
GSS
Qg
Qgs
Qgd
t
d (on)
tr
t
d (off)
tf
V
SD
:A
nA
At rated VGS
VGS = 10 V
50% rated VDS
50% rated ID
VDD =50%
rated VDS
50% rated ID
RG = 6.2
S
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn off DELAY Time
Fall Time
Diode Forvard Voltage
(I
S
= rated I
D
, V
GS
= 0V, T
J
= 25
o
C)
Diode Reverse Recovery Time
Reverse Recovery Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
NOTES:
nC
nsec
V
nsec
:C
pF
T
J
=25
o
C
IF = 10A
di/dt = 100A/:sec
VGS =0 Volts
VDS =25 Volts
f =1 MHz
t
rr
Q
RR
Ciss
Coss
Crss
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