PTF 10122
50 Watts WCDMA, 2.1–2.2 GHz
GOLDMOS
™
Field Effect Transistor
Description
The PTF 10122 is an internally matched common source N-channel
enhancement-mode lateral MOSFET intended for WCDMA applications
from 2.1 to 2.2 GHz. It is rated at 50 watts power output, with 11 dB of
gain. Nitride surface passivation and full gold metallization ensure ex-
cellent device lifetime and reliability.
•
•
•
•
•
•
•
INTERNALLY MATCHED
Guaranteed Performance at 2.17 GHz, 28 V
- Output Power = 50 Watts Min
- Gain = 11.0 dB Typ
- Efficiency = 35% Typ
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
Excellent Thermal Stability
100% Lot Traceability
Typical Output Power vs. Input Power
60
50
40
30
30
20
10
0
0
1
2
3
4
5
6
20
10
0
Output Power (Watts)
50
40
Efficiency (%)
A-12
1012
3456
2
994
6
V
DD
= 28 V
I
DQ
= 600 mA
f = 2.17 GHz
Input Power (Watts)
Package 20248
RF Specifications
(100% Tested)
Characteristic
Gain
(V
DD
= 28 V, P
OUT
= 15 W, I
DQ
= 600 mA, f = 2.11 GHz)
Power Output at 1 dB Compression
(V
DD
= 28 V, I
DQ
= 600 mA, f = 2.17 GHz)
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 50 W, I
DQ
= 600 mA, f = 2.17 GHz)
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 50 W, I
DQ
= 600 mA, f = 2.17 GHz
—all phase angles at frequency of test)
All published data at T
CASE
= 25°C unless otherwise indicated.
Symbol
G
ps
P-1dB
h
D
Y
Min
10.0
50
30
—
Typ
11.0
—
35
—
Max
—
—
—
10:1
Units
dB
Watts
%
—
e
1
PTF 10122
Electrical Characteristics
(100% Tested)
Characteristic
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Forward Transconductance
e
Conditions
V
GS
= 0 V, I
D
= 100 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 10 V, I
D
= 150 mA
V
DS
= 10 V, I
D
= 2 A
Symbol
V
(BR)DSS
I
DSS
V
GS(th)
g
fs
Min
65
—
3.0
—
Typ
—
—
—
4.0
Max
—
2.0
5.0
—
Units
Volts
mA
Volts
Siemens
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C)
T
STG
R
qJC
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
±20
200
237
1.35
–40 to +150
0.74
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
Typical Performance
14
50
Efficiency @ P-1dB
Gain
40
30
Output Power & Efficiency
12
11
70
60
50
40
13
12
Gain (dB)
Gain (dB)
Output Power (W)
11
10
9
8
7
Gain
10
9
8
7
2000
V
DD
= 28 V
I
DQ
= 600 mA
P
OUT
= 15 W
V
DD
= 28 V
I
DQ
= 600 mA
2100
Efficiency (%)
2200
30
20
2300
6
2100
2125
2150
0
20
- 5
-10
Return Loss
10
-15
-20
-25
0
2175
2200
Frequency (MHz)
Frequency (MHz)
2
Return Loss (dB) Efficiency (%)
Typical P
OUT
, Gain & Efficiency
(at P-1dB)
vs. Frequency
Broadband Test Fixture Performance
e
Output Power vs. Supply Voltage
75
-20
PTF 10122
Intermodulation Distortion vs. Output Power
V
DD
= 28 V, I
DQ
= 600 mA
-30
3rd Order
Output Power (Watts)
f
1
= 2199 MHz, f
2
= 2200 MHz
65
IMD (dBc)
-40
5th
-50
7th
-60
-70
55
45
I
DQ
= 600 mA
f = 2.2 GHz
35
22
24
26
28
30
32
34
0
10
20
30
40
50
Supply Voltage (Volts)
Output Power (Watts-PEP)
Power Gain vs. Output Power
12
240
Capacitance vs. Supply Voltage *
24
I
DQ
= 600 mA
Cds and Cgs (pF)
Power Gain (dB)
10
200
160
V
GS
= 0 V
f = 1 MHz
18
120
80
40
0
12
8
C
ds
6
I
DQ
= 150mA
6
0.1
1.0
V
DD
= 28 V
f = 2.2 GHz
10.0
100.0
C
rss
0
0
10
20
30
40
Output Power (Watts)
Supply Voltage (Volts)
* This part is internally matched. Measurements of the finished
product will not yield these results.
Bias Voltage vs. Temperature
1.03
1.02
Bias Voltage (V)
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
30
Temp. (°C)
80
130
0.400
1.383
2.367
3.350
4.333
5.317
Voltage normalized to 1.0 V
Series show current (A)
3
Crss
I
DQ
= 300 mA
C
gs
PTF 10122
Impedance Data
V
DD
= 28 V, P
OUT
= 50 W, I
DQ
= 600 mA
Z Source
D
e
Z
0
= 50
W
Z Load
G
S
Frequency
GHz
2.00
2.05
2.10
2.15
2.20
2.25
2.30
R
Z Source
W
jX
-7.20
-7.80
-8.80
-8.90
-7.30
-3.00
-0.60
R
2.88
3.70
4.80
8.00
9.50
11.00
10.00
Z Load
W
jX
-0.90
-1.30
-1.50
-1.90
-2.00
-1.70
-1.40
1.05
1.30
1.50
1.40
1.30
1.22
1.30
Test Circuit
Test Circuit Block Diagram for f = 2.1–2.2 GHz
Q1
l
1
l
2
l
3
l
4
l
5
l
6
l
7
l
8
C1, C9
PTF 10122
.240
l
@ 2.15 GHz
.0281
l
@ 2.15 GHz
.085
l
@ 2.15 GHz
.104
l
@ 2.15 GHz
.120
l
@ 2.15 GHz
.063
l
@ 2.15 GHz
.216
l
@ 2.15 GHz
.174
l
@ 2.15 GHz
10
mF
Chip Cap
LDMOS RF Transistor
Microstrip 50
W
Microstrip 14.7
W
Microstrip 9.5
W
Microstrip 78
W
Microstrip 6.82
W
Microstrip 10.88
W
Microstrip 65
W
Microstrip 50
W
ATC 100 B
C2, C10
0.1
mF
Chip Cap
ATC 100 B
C3, C4, C5, C6 — 10 pF Chip Cap ATC 100 B
C7
0.1
mF,
50 V Digi-Key Capacitor 2.2 QBK
C8
100
mF,
50 V Digi-Key Capacitor
L1
2.7 nH
Chip Inductor
L2
6mm
SMT Ferrite Bead
R1, R2
220
W
Chip Resistor
Digi-Key 2.2 QBK
Circuit Board — Dielectric Thickness = 0.050”,
e
r
= 6.0 @ 1 MHz, 2 oz. Copper, TMM6,
Rogers
4
e
PTF 10122
e
A-1234569946
10122
Parts Layout (not to scale)
Artwork (not to scale)
5
单片机
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