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PTB 20166
23 Watts, 675–925 MHz
Common Base RF Power Transistor
Description
The 20166 is an NPN, common base RF power transistor intended
for 24–30 Vdc class C operation from 675 to 925 MHz. Rated at 23
watts minimum output power, it may be used for both CW and pulsed
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
Specified at 28 Volt, 925 MHz
Class C Characteristics
55% Min Collector Efficiency at 23 Watts
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
30
25
20
15
10
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Output Power (Watts)
201
66
LOT
COD
E
V
CC
= 28 V
f = 925 MHz
Input Power (Watts)
Package 20209
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
T
STG
R
θJC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
50
50
4
4
48
0.27
–40 to +150
3.6
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98
PTB 20166
Electrical Characteristics
Characteristic
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
(100% Tested)
e
Conditions
I
C
= 50 mA, R
BE
= 27
Ω
V
BE
= 0 V, I
C
= 50 mA
I
C
= 0 A, I
E
= 5 mA
V
CE
= 5 V, I
C
= 500 mA
Symbol
V
(BR)CER
V
(BR)CES
V
(BR)EBO
h
FE
Min
50
50
4
30
Typ
—
—
—
50
Max
—
—
—
100
Units
Volts
Volts
Volts
—
RF Specifications
(100% Tested)
Characteristic
Gain
(V
CC
= 28 Vdc, Pout = 23 W, f = 925 MHz)
Collector Efficiency
(V
CC
= 28 Vdc, Pout = 23 W, f = 925 MHz)
Load Mismatch Tolerance
(V
CC
= 28 Vdc, Pout = 23 W, f = 925 MHz
—all phase angles at frequency of test)
Symbol
G
pe
η
C
Ψ
Min
8
55
—
Typ
9
65
—
Max
—
—
5:1
Units
dB
%
—
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CC
= 28 Vdc, Pout = 23 W)
Z Source
Z Load
Frequency
MHz
675
700
725
750
775
800
825
850
875
900
925
R
7.4
7.2
7.0
6.9
6.6
6.4
6.1
5.7
5.3
4.9
4.5
Z Source
jX
-1.8
-1.4
-1.1
-0.79
-0.52
-0.26
0.01
0.29
0.62
1.0
1.4
2
R
6.6
7.2
7.5
7.6
7.6
7.5
7.2
6.9
6.6
6.2
5.9
Z Load
jX
9.0
8.6
8.1
7.6
7.1
6.7
6.4
6.2
6.1
6.0
6.1
5/19/98
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Typical Performance
Gain & Efficiency vs. Power Out
12
10
8
80
12
70
10
60
8
PTB 20166
Gain and Return Loss vs. Frequency
(as measured in a broadband circuit)
0
-5
Gain (dB)
6
4
2
0
0
5
10
15
20
25
30
50
40
6
4
2
0
600
-15
-20
V
CC
= 28 V
f = 925 MHz
30
20
V
CC
= 28 V
Pin = 2 W
700
800
900
-25
-30
1000
Output Power (Watts)
Frequency (MHz)
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
Specifications subject to change without notice.
LF
© 1996 Ericsson Inc.
EUS/KR 1301-PTB 20166 Uen Rev. C 09-28-98
3
Return Loss (dB)
-10
Efficiency (%)
Gain (dB)
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