e
PTB 20157
20 Watts, 1.35–1.85 GHz
RF Power Transistor
Description
The 20157 is an NPN common base RF power transistor intended
for 22–26 Vdc class C operation from 1.35 to 1.85 GHz. Rated at 20
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
20 Watts, 1.35–1.85 GHz
Class C Characteristics
40% Min Collector Efficiency at 20 Watts
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
30
Output Power (Watts)
25
20
15
10
5
0
0
1
2
3
4
5
6
7
2015
7
LOT
COD
E
V
CC
= 22 V
f = 1.85 GHz
Input Power (Watts)
Package 20209
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
T
STG
R
θJC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
50
50
4
6
75
0.43
–40 to +150
2.33
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98
PTB 20157
Electrical Characteristics
Characteristic
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
(100% Tested)
e
Conditions
I
C
= 50 mA, R
BE
= 27
Ω
V
BE
= 0 V, I
C
= 50 mA
I
C
= 0 A, I
E
= 5 mA
V
CE
= 5 V, I
C
= 500 mA
Symbol
V
(BR)CER
V
(BR)CES
V
(BR)EBO
h
FE
Min
50
50
4
20
Typ
—
—
5
50
Max
—
—
—
120
Units
Volts
Volts
Volts
—
RF Specifications
(100% Tested)
Characteristic
Gain
(V
CC
= 22 Vdc, Pout = 20 W, f = 1.85 GHz)
Collector Efficiency
(V
CC
= 22 Vdc, Pout = 20 W, f = 1.85 GHz)
Load Mismatch Tolerance
(V
CC
= 22 Vdc, Pout = 20 W, f = 1.85 GHz
—all phase angles at frequency of test)
Symbol
G
pe
η
C
Ψ
Min
6
40
—
Typ
7
43
—
Max
—
—
10:1
Units
dB
%
—
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CC
= 22 Vdc, Pout = 20 W)
Z Source
Z Load
Frequency
GHz
1.350
1.400
1.450
1.500
1.550
1.600
1.650
1.700
1.750
1.800
1.850
R
8.2
7.7
7.4
7.3
7.2
7.3
7.4
7.6
7.9
8.1
8.4
Z Source
jX
-15.0
-13.0
-12.0
-11.0
-10.0
-9.2
-8.6
-8.1
-7.8
-7.6
-7.5
2
R
9.3
8.8
8.3
7.9
7.5
7.2
6.9
6.6
6.4
6.2
6.1
Z Load
jX
-15
-15
-14
-14
-13
-13
-13
-12
-12
-11
-11
e
Typical Performance
Gain & Return Loss vs. Frequency
10
8
6
PTB 20157
Gain & Efficiency vs. Power Out
10
5
0
-5
8
6
40
30
20
50
(as measured in a broadband circuit)
V
CC
= 22 V
Pout = 20 W
Return Loss (dB)
Gain (dB)
4
2
0
1.3
1.4
1.5
1.6
1.7
1.8
1.9
-15
-20
-25
-30
Gain (dB)
-10
4
2
0
0
5
10
15
20
25
30
V
CC
= 22 V
f = 1.85 GHz
10
0
Frequency (GHz)
Output Power (Watts)
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
Specifications subject to change without notice.
LF
© 1996 Ericsson Inc.
EUS/KR 1301-PTB 20157 Uen Rev. D 09-28-98
3
Efficiency (%)
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