e
PTB 20148
60 Watts, 925–960 MHz
Cellular Radio RF Power Transistor
Description
The 20148 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation from 925 to 960 MHz. Rated at 60
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
60 Watts, 925–960 MHz
Class AB Characteristics
50% Min Collector Efficiency at 60 Watts
Gold Metallization
Silicon Nitride Passivated
Gain vs. Frequency
(as measured in a broadband circuit)
12
V
CC
= 25 V
11
Gain (dB)
I
CQ
= 200 mA
Pout = 60 W
10
201
48
LO
TC
OD
E
9
8
920
925
930
935
940
945
950
955
960
965
Frequency (MHz)
Package 20200
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
T
STG
R
θJC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
40
65
4.0
8.0
145
0.83
–40 to +150
1.2
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98
PTB 20148
Electrical Characteristics
Characteristic
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
(100% Tested)
e
Conditions
I
B
= 0 A, I
C
= 50 mA
V
BE
= 0 V, I
C
= 50 mA
I
C
= 0 A, I
E
= 5 mA
V
CE
= 5 V, I
C
= 250 mA
Symbol
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
h
FE
Min
25
55
3.5
20
Typ
30
70
5.0
50
Max
—
—
—
120
Units
Volts
Volts
Volts
—
RF Specifications
(100% Tested)
Characteristic
Gain
(V
CC
= 25 Vdc, Pout = 60 W, I
CQ
= 200 mA, f = 960 MHz)
Collector Efficiency
(V
CC
= 25 Vdc, Pout = 60 W, I
CQ
= 200 mA, f = 960 MHz)
Load Mismatch Tolerance
(V
CC
= 25 Vdc, Pout = 60 W, I
CQ
= 200 mA,
f = 960 MHz—all phase angles at frequency of test)
Symbol
G
pe
η
C
Ψ
Min
8.0
50
—
Typ
9.5
—
—
Max
—
—
10:1
Units
dB
%
—
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CC
= 25 Vdc, Pout = 60 W, I
CQ
= 200 mA)
Z Source
Z Load
Frequency
MHz
925
940
960
R
3.4
3.2
3.0
Z Source
jX
-4.2
-4.7
-5.5
R
3.8
3.5
3.3
Z Load
jX
0.6
1.2
2.0
2
5/19/98
e
Typical Performance
Efficiency vs. Frequency
80
70
PTB 20148
(as measured in a broadband circuit)
Efficiency (%)
60
50
40
30
20
920
V
CC
= 25 V
I
CQ
= 200 mA
Pout = 60 W
925
930
935
940
945
950
955
960
965
Frequency (MHz)
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
Specifications subject to change without notice.
LF
© Ericsson Components AB 1995
EUS/KR 1301-PTB 20148 Uen Rev. D 09-28-98
3
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
