PTF 10134
100 Watts, 2.1–2.2 GHz
GOLDMOS
®
Field Effect Transistor
Description
The PTF 10134 is an internally matched
GOLDMOS
FET intended
for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 100 watts
power output and operates with 10 dB typical gain. Nitride surface
passivation and gold metallization ensure excellent device lifetime
and reliability.
•
•
INTERNALLY MATCHED
Guaranteed Performance at 2.17 GHz, 28 V
- Output Power = 100 Watts Min
- Power Gain = 10 dB Typ
Full Gold Metallization
Excellent Thermal Stability
100% Lot Traceability
•
•
•
Typical Output Power & Efficiency vs. Input Power
120
Output Power
100
40
Efficiency
32
24
48
Output Power (Watts)
80
60
40
20
0
0
2
4
6
8
Efficiency (%)
X
1234
101
5699
34
53
A
V
DD
= 28 V
I
DQ
= 1.3 A Total
f = 2170 MHz
16
8
0
10
12
14
Input Power (Watts)
Package 20250
RF Specifications
(100% Tested)
Characteristic
Gain
(V
DD
= 28 V, P
OUT
= 30 W, I
DQ
= 1.3 A Total, f = 2.17 GHz)
Power Output at 1.5 dB Compression
(V
DD
= 28 V, I
DQ
= 1.3 A Total, f = 2.17 GHz)
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 100 W, I
DQ
= 1.3 A Total, f = 2.17 GHz)
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 80 W, I
DQ
= 1.3 A Total, f = 2.17 GHz
—all phase angles at frequency of test)
All published data at T
CASE
= 25°C unless otherwise indicated.
Symbol
G
ps
P-1dB
h
D
Y
Min
9.5
100
—
—
Typ
10
—
37
—
Max
—
—
—
10:1
Units
dB
Watts
%
—
e
1
PTF 10134
Characteristic
(per side)
Conditions
Symbol
V
(BR)DSS
I
DSS
V
GS(th)
g
fs
e
Min
65
—
3.0
—
Electrical Characteristics
(100% Tested—characteristics, conditions and limits shown per side)
Typ
—
—
—
4.0
Max
—
5.0
5.0
—
Units
Volts
mA
Volts
Siemens
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= 100 mA
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Forward Transconductance
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 10 V, I
D
= 150 mA
V
DS
= 10 V, I
D
= 2 A
Maximum Ratings
Parameter
Drain-Source Voltage
(1)
Gate-Source Voltage
(1)
Operating Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (TCASE = 70°C)
(1)
per
Symbol
V
DSS
V
GS
T
J
P
D
T
STG
R
qJC
Value
65
±20
200
440
2.51
–40 to +150
0.39
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
side
Typical Performance
Efficiency (%)
Return Loss (dB)
Typical P
OUT
, Gain & Efficiency
(at P-1dB)
vs. Frequency
Output Power & Efficiency
12
11
Output Power (W)
Gain (dB)
Broadband Test Fixture Performance
11
60
Gain
50
9
120
100
80
V
DD
= 28 V
I
DQ
= 1.3 A Total
40
Gain
10
9
8
7
2100
Efficiency (%)
Gain (dB)
7
P
OUT
= 25 W
Efficiency
-
30
5
20
-15
V
DD
= 28 V
I
DQ
= 1.3 A Total
60
40
20
2200
5
Return Loss
3
2100
-25
10
-35
0
2180
2120
2140
2160
2180
2120
2140
2160
Frequency (MHz)
Frequency (MHz)
2
e
Power Gain vs. Output Power
11
PTF 10134
Output Power vs. Supply Voltage
65
Output Power (Watts)
10
I
DQ
= 1300 mA
I
DQ
= 650 mA
60
55
50
45
40
Power Gain (dB)
9
8
I
DQ
= 325 mA
I
DQ
= 1.3 A Total
f = 2170 MHz
V
DD
= 28 V
f = 2170 MHz
7
0.1
1.0
10.0
100.0
24
26
28
30
32
34
36
Output Power (Watts)
Supply Voltage (Volts)
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
-15
-25
3rd Order
Capacitance vs. Supply Voltage *
450
400
30
Cds and Cgs (pF)
V
DD
= 28 V, I
DQ
= 1.3 A Total
f
1
= 2169 MHz, f
2
= 2170 MHz
350
300
250
200
150
100
50
V
GS
= 0 V
f = 1 MHz
25
20
15
IMD (dBc)
5th
-45
-55
-65
0
20
40
60
80
100
120
7th
C
ds
C
rss
0
10
20
30
40
10
5
0
0
Output Power (Watts-PEP)
Supply Voltage (Volts)
* This part is internally matched. Measurements of the finished
product will not yield these results.
Bias Voltage vs. Temperature
1.03
1.02
Bias Voltage (V)
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
30
Temp. (°C)
80
130
0.800
2.767
4.733
6.700
8.667
Voltage normalized to 1.0 V
Series show current (A)
3
Crss
-35
C
gs
PTF 10134
Impedance Data
(V
DD
= 28 V, P
OUT
= 100 W,
I
DQ
= 1.3 A Total)
Z Source
D
e
Z Load
T
OW
A
D
RD
G
E
NE
R
A
TO
Frequency
GHz
2.00
2.05
2.10
2.15
2.20
2.25
2.30
R
Z Source
W
jX
-14.40
-15.60
-17.60
-17.80
-14.60
-6.00
-1.20
R
5.76
7.40
9.60
16.00
19.00
22.00
20.00
Z Load
W
jX
-1.80
-2.60
-3.00
-3.80
-4.00
-3.40
-2.80
2.10
2.60
3.00
2.80
2.60
2.44
2.60
-
WAV
E
LE
NG
THS
0.0
0.1
0.2
0.3
LOAD
-
S
TO
W
A
RD
NG
T
H
Z Load
2.0 GHz
2.3 GHz
2.3 GHz
0.1
LE
<
--
VE
- WA
Z Source
0.2
2.0 GHz
0 .3
45
0.
5
0.0
.4
4
0.4
0 .2
G
G
R
--
->
S
0.3
Z
0
= 50
W
0.1
e
Test Circuit
PTF 10134
Test Circuit Block Diagram for f = 2.0 GHz
0.184l 2.0 GHz Microstrip 50
W
0.044l 2.0 GHz Microstrip 26.1
W
0.025l 2.0 GHz Microstrip 43.9
W
0.185l 2.0 GHz Microstrip 67.2
W
0.053l 2.0 GHz Microstrip 8.7
W
0.076l 2.0 GHz Microstrip 8.7
W
0.031l 2.0 GHz Microstrip 9.5
W
0.072l 2.0 GHz Microstrip15.13
W
0.341l 2.0 GHz Microstrip 58
W
0.119l 2.0 GHz Microstrip 50
W
C1, C2, C3, C4, C5, C6, C15, C16 ATC 100B
C7, C8, C13, C14
Digi-Key P4525-ND
C9, C10, C11, C12, C19, C20
Digi-Key PC56106-ND
C17, C18
ATC 100B
C 21
ATC 100B
R1, R2, R3, R4
Digi-Key P220ECT-ND
L1, L2
TOKO,# LL2012-F2N7S
L3, L4
PHILIPS,#BDS31314-6-452
T1, T2
Semi-rigid Coaxial Cable, 50
W
Circuit Board
Roger Microwave
l
1
l
2,
l
17
l
3,
l
6
l
4,
l
7
l
5,
l
8
l
9,
l
13
l
10,
l
14
l
11,
l
15
l
12,
l
16
l
18
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Resistor, 220
W
Coil, 2.7 nH, SMT
Ferrite Bead, 4mm
TMM4,
e
r
6.0, THICKNESS 0.30”, 2 OZ COPPER
5
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