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PTB 20135
85 Watts, 925–960 MHz
Cellular Radio RF Power Transistor
Description
The 20135 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 925 to 960 MHz. Rated at 85
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
26 Volt, 960 MHz Characteristics
- Output Power = 85 Watts
- Collector Efficiency = 50% at 85 Watts
- IMD = -30 dBc Max at 60 W(PEP)
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
100
Output Power (Watts)
80
60
40
2013
5
LOT
COD
E
V
CC
= 26 V
20
0
0
2
4
6
8
10
12
14
16
18
I
CQ
= 200 mA
f = 960 MHz
Input Power (Watts)
Package 20216
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
T
STG
R
θJC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
40
65
4.0
20
165
0.95
–40 to +150
1.06
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98
PTB 20135
Electrical Characteristics
Characteristic
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
(100% Tested)
e
Conditions
I
B
= 0 A, I
C
= 100 mA
V
BE
= 0 V, I
C
= 100 mA
I
C
= 0 A, I
E
= 5 mA
V
CE
= 5 V, I
C
= 1 A
Symbol
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
h
FE
Min
25
55
3.5
20
Typ
30
70
5
50
Max
—
—
—
100
Units
Volts
Volts
Volts
—
RF Specifications
(100% Tested)
Characteristic
Gain
(V
CC
= 26 Vdc, Pout = 85 W, I
CQ
= 200 mA, f = 960 MHz)
Collector Efficiency
(V
CC
= 26 Vdc, Pout = 85 W, I
CQ
= 200 mA, f = 960 MHz)
Intermodulation Distortion
(V
CC
= 26 Vdc, Pout = 60 W(PEP), I
CQ
= 200 mA,
f
1
= 959.95 MHz, f
2
= 960.00 MHz)
Load Mismatch Tolerance
(V
CC
= 26 Vdc, Pout = 60 W(PEP), I
CQ
= 200 mA,
f = 960 MHz—all phase angles at frequency of test)
Symbol
G
pe
η
C
IMD
Min
8.0
50
—
Typ
9.5
—
-31
Max
—
—
—
Units
dB
%
dBc
Ψ
—
—
10:1
—
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CC
= 26 Vdc, Pout = 85 W, I
CQ
= 200 mA)
Z Source
Z Load
Frequency
MHz
925
942
960
R
3.0
2.7
2.6
Z Source
jX
-1.0
-0.7
-0.4
R
1.4
1.4
1.4
Z Load
jX
0.1
-0.2
0.2
2
5/19/98
e
Typical Performance
Output Power vs. Supply Voltage
100
-15
PTB 20135
Intermodulation Distortion vs. Output Power
V
CC
= 26 V
Output Power (Watts)
85
-20
IMD (dBc)
I
CQ
= 200 mA
f
1
= 959.95 MHz
f
2
= 960.00 MHz
70
-25
55
I
CQ
= 200 mA
Pin = 11 W
f = 960 MHz
-30
40
17
19
21
23
25
27
-35
36
42
48
54
60
66
72
Vcc, Supply Voltage
Output Power (Watts-PEP)
Gain vs. Frequency
(as measured in a broadband circuit)
11
60
Efficiency vs. Output Power
10
Efficiency (%)
45
Gain (dB)
9
30
V
CC
= 26 V
8
V
CC
= 26 V
15
I
CQ
= 200 mA
Pout = 85 W
930
935
940
945
950
955
960
I
CQ
= 200 mA
f = 960 MHz
5
25
45
65
85
105
7
925
0
Frequency (MHz)
Output Power (Watts)
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
Specifications subject to change without notice.
LF
© Ericsson Components AB 1995
EUS/KR 1301-PTB 20135 Uen Rev. D 09-28-98
3
5/19/98
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