PTF 102028
18 Watts, 860–960 MHz
GOLDMOS
®
Field Effect Transistor
Description
The PTF 102028 is an 18–watt
GOLDMOS
FET intended for large sig-
nal amplifier applications 860 to 960 MHz. It operates with 55% effi-
ciency and 15 dB gain. Nitride surface passivation and full gold metalli-
zation ensure excellent device lifetime and reliability.
•
Performance at 960 MHz, 26 Volts
- Output Power = 18 Watts Min
- Power Gain = 15 dB Typ
- Efficiency = 55% Typ
Full Gold Metallization
Silicon Nitride Passivated
Excellent Thermal Stability
Back Side Common Source
100% Lot Traceability
•
•
•
•
•
Typical Output Power & Efficiency vs. Input Power
24
80
Output Pow er
Efficiency
70
60
50
Output Power (Watts)
20
16
12
8
4
0
0.0
Efficiency (%)x
102
123
456
985
5A
028
V
DD
= 26 V
I
DQ
= 130 mA
f = 960 MHz
0.3
0.5
0.8
40
30
20
1.0
Input Power (Watts)
Package 20251
RF Specifications
(100% Tested)
Characteristic
Common Source Power Gain
(V
DD
= 26 V, P
OUT
= 18 W, I
DQ
= 130 mA, f = 960 MHz)
Power Output at 1 dB Compression
(V
DD
= 26 V, I
DQ
= 130 mA, f = 960 MHz)
Drain Efficiency
(V
DD
= 26 V, P
OUT
= 18 W, I
DQ
= 130 mA, f = 960 MHz)
Load Mismatch Tolerance
(V
DD
= 26 V, P
OUT
= 18 W, I
DQ
= 130 mA, f = 960 MHz—
all phase angles at frequency of test)
All published data at T
CASE
= 25°C unless otherwise indicated.
Symbol
G
ps
P-1dB
h
Y
Min
14
18
50
—
Typ
15
20
55
—
Max
—
—
—
5:1
Units
dB
Watts
%
—
e
1
PTF 102028
Electrical Characteristics
(100% Tested)
Characteristic
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
e
Conditions
V
GS
= 0 V, I
D
= 25 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 10 V, I
D
= 75 mA
V
DS
= 10 V, I
D
= 0.5 A
Symbol
V
(BR)DSS
I
DSS
V
GS(th)
g
fs
Min
65
—
3.0
—
Typ
—
—
—
0.9
Max
—
1.0
5.0
—
Units
Volts
mA
Volts
Siemens
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature
Thermal Resistance (T
CASE
= 70°C)
T
STG
R
qJC
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
±20
200
58
0.33
150
3.0
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
Typical Performance
Typical P
OUT
, Gain & Efficiency
(at P-1dB)
vs. Frequency
Gain (dB) & Output Power (W)
x
21
20
19
18
17
Gain
16
15
860
Output Pow er
70
65
Efficiency (%)
16
Broadband Test Fixture Performance
20
60
50
40
12
Gain (dB)
30
0
-20
5
-10
10
-15
Return Loss (dB)
-20
0
-25
940
950
960
60
Efficiency (%)x
45
40
8
880
900
920
940
35
960
4
920
930
Frequency (MHz)
Frequency (MHz)
2
Return Loss
V
DD
= 26 V
I
DQ
= 130 mA
Efficiency
55
50
V
DD
= 26 V
I
DQ
= 130 mA
P
OUT
= 18 W
Gain
Efficiency
e
Power Gain vs. Output Power
16
I
DQ
= 130
24
102028
Output Power
(at 1 dB Compression)
vs. Supply Voltage
Output Power (Watts)
X
Power Gain (dB)
X
15
I
DQ
= 65 mA
14
I
DQ
= 35 mA
13
22
20
18
16
14
V
DD
= 26 V
f = 960 MHz
I
DQ
= 130 mA
f = 960 MHz
12
0.1
1.0
10.0
100.0
22
27
32
37
Output Power (Watts)
X
Supply Voltage (Volts)
X
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
0
-10
Capacitance vs. Supply Voltage
50
6
5
Cds and Cgs (pF)x
IMD (dBc)
X
-20
-30
-40
-50
-60
0
f
1
= 959.900 MHz
f
2
=960.000 MHz
3rd Order
5th
7th
30
20
10
0
V
GS
= 0 V
f = 1 MHz
3
2
1
C
ds
C
rss
0
10
20
30
40
0
5
10
15
20
25
Output Power (Watts-PEP)
X
Supply Voltage (Volts)
x
Bias Voltage vs. Temperature
1.03
1.02
Voltage normalized to 1.0 V
Series show current (A)
Bias Voltage (V) x
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0.075
0.585
1.095
30
0.33
0.84
1.35
80
130
Temp. (°C)
3
Crss (pF)
x
V
DD
= 26 V
I
DQ
= 130 mA
40
C
gs
4
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