PTF 10149
70 Watts, 921–960 MHz
GOLDMOS
Field Effect Transistor
Description
The PTF 10149 is an internally matched 70–watt
GOLDMOS
FET
intended for cellular and GSM amplifier applications from 921 to
960 MHz. It operates with 50% efficiency and 16 dB typical gain.
Nitride surface passivation and full gold metallization ensure excel-
lent device lifetime and reliability.
•
•
INTERNALLY MATCHED
Performance at 960 MHz, 26 Volts
- Output Power = 70 Watts
- Power Gain = 16.0 dB Typ
- Efficiency = 50% Typ
Full Gold Metallization
Silicon Nitride Passivated
Excellent Thermal Stability
100% Lot Traceability
•
•
•
•
Typical Output Power & Efficiency vs. Input Power
100
Efficiency
60
50
Efficiency (%)
x
40
Output Power (Watts)
80
60
40
20
0
0
1
2
3
e
A-12
1014
3456
9
99
35
V
DD
= 26 V
I
DQ
= 750 mA
f = 960 MHz
Output Pow er
30
20
10
Package 20252
Input Power (Watts)
RF Specifications
(100% tested)
Characteristic
Gain
(V
DD
= 26 V, P
OUT
= 70 W, I
DQ
= 750 mA, f = 960 MHz)
Power Output at 1 dB Compression
(V
DD
= 26 V, I
DQ
= 750 mA, f = 960 MHz)
Drain Efficiency
(V
DD
= 26 V, P
OUT
= 70 W, I
DQ
= 750 mA, f = 960 MHz)
Load Mismatch Tolerance
(V
DD
= 26 V, P
OUT
= 70 W, I
DQ
= 750 mA, f = 921 MHz
—all phase angles at frequency of test)
All published data at T
CASE
= 25°C unless otherwise indicated.
Symbol
G
pe
P-1dB
h
Y
Min
15.0
70
47
—
Typ
16.0
75
50
—
Max
—
—
—
5:1
Units
dB
Watts
%
—
e
1
PTF 10149
Electrical Characteristics
Characteristic
(100% Tested)
e
Conditions
Symbol
V
(BR)DSS
I
DSS
V
GS(th)
g
fs
Min
65
—
3.0
—
Typ
—
—
—
3.0
Max
—
1.0
5.0
—
Units
Volts
mA
Volts
Siemens
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= 25 mA
Drain-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
V
DS
= 26 V, V
GS
= 0 V
V
DS
= 10 V, I
D
= 75 mA
V
DS
= 10 V, I
D
= 3 A
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C)
T
STG
R
qJC
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
±20
200
197
1.12
–40 to +150
0.89
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
Typical Performance
Typical P
OUT
, Gain & Efficiency
(at P-1dB)
vs. Frequency
Output Power & Efficiency
17
Gain (dB)
Gain (dB)
x
15
13
11
9
920
100
80
Output Pow er (W)
60
Efficiency (%)
930
940
950
40
960
120
20
Broadband Test Fixture Performance
Efficiency (%)
60
50
16
Gain (dB)
Gain
12
V
DD
= 26 V
I
DQ
= 750 mA
P
OUT
= 70 W
40
-30
5
20
-15
V
DD
= 26 V
I
DQ
= 750 mA
8
Return Loss
4
920
10
-25
0
-35
960
Frequency (MHz)
930
940
950
Frequency (MHz)
2
Return Loss (dB)
x
Efficiency
e
Power Gain vs. Output Power
18
I
DQ
= 750
80
PTF 10149
Output Power vs. Supply Voltage
Output Power (Watts)
Power Gain (dB)
17
70
16
I
DQ
= 375
15
I
DQ
= 187
14
1
10
100
60
V
DD
= 26 V
f = 960 MHz
50
I
DQ
= 750 mA
f = 960 MHz
22
24
26
28
30
40
Output Power (Watts)
Supply Voltage (Volts)
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
-10
-20
Capacitance vs. Supply Voltage *
200
180
160
140
120
100
80
60
40
20
0
0
40
C
gs
V
GS
= 0 V
f = 1 MHz
35
30
25
20
15
10
IM
3
(dBc)
-30
-40
-50
-60
0
10
20
30
40
50
60
IM 3
C
ds
IM 5
IM 7
C
rss
5
0
10
20
30
40
70
80
Output Power (Watts-PEP)
Supply Voltage (Volts)
* This part is internally matched. Measurements of the
finished product will not yield these figures.
Bias Voltage vs. Temperature
1.03
1.02
Bias Voltage (V)
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
30
Temp. (°C)
80
130
0.40
1.53
2.67
3.80
4.93
6.07
Voltage normalized to 1.0 V
Series show current (A)
3
Crss (pF)
x
V
DD
= 26 V, I
DQ
= 750 mA
f
1
= 942 MHz, f
2
= 942.1 MHz
Cds & Cgs (pF)
x
PTF 10149
Impedance Data
(V
DD
= 26 V, P
OUT
= 70 W, I
DQ
= 700 mA)
D
e
Z
0
= 10
W
Z Source
Z Load
G
S
Frequency
MHz
920
930
940
950
960
R
Z Source
W
jX
-0.64
-0.60
-0.55
-0.34
-0.21
R
1.45
1.44
1.43
1.42
1.40
Z Load
W
jX
1.08
1.06
1.05
1.03
1.02
1.40
1.43
1.45
1.50
1.55
Test Circuit
Test Circuit Schematic for f = 960 MHz
DUT
l
1
l
2
l
3
l
4
l
5
l
6
l
7
l
8
l
9
l
10
l
11
l
12
l
13
l
14
PTF 10149
0.0633
l
960 GHz
0.1142
l
960 GHz
0.0821
l
960 GHz
0.1294
l
960 GHz
0.0468
l
960 GHz
0.0481
l
960 GHz
0.0441
l
960 GHz
0.2500
l
960 GHz
0.1398
l
960 GHz
0.0821
l
960 GHz
0.0226
l
960 GHz
0.0109
l
960 GHz
0.0504
l
960 GHz
0.034
l
960 GHz
LDMOS Field Effect Transistor
Microstrip 50
W
Microstrip 50
W
Microstrip 50
W
Microstrip 9.18
W
Microstrip 9.18
W
Microstrip 6.79
W
Microstrip 6.79
W
Microstrip 59
W
Microstrip 6.79
W
Microstrip 50
W
Microstrip 9.69
W
Microstrip 9.69
W
Microstrip 50
W
Microstrip 50
W
4
C1, C3, C8, C12 33 pF Capacitor ATC 100 B
C2
1.3 pF, 50 V Capacitor, ATC 100 B
C4
Not Used
C5, C6, C7
7.5 pF
Capacitor, ATC 100 B
C9
100
mF,
50 V Capacitor, Digi-Key P5182-ND
C10
0.1
uF,
50 V Capacitor, Digi-Key P4525-ND
C11
0.3 pF
Capacitor ATC 100 B
R1, R2
1K
Resistor, Digi-Key 1KQBK
L1, L2
4 Turn, 20 AWG, .120” I.D.
Circuit Board .031" thick,
e
r
= 4.0, G200, AlliedSignal,
2 oz. copper
e
PTF 10149
A-1234569935
10149
Assembly Diagram
Artwork (not to scale)
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
