e
PTB 20193
60 Watts, 1.8–1.9 GHz
Cellular Radio RF Power Transistor
Description
The 20193 is a class AB, NPN common emitter RF power transistor
intended for 26 Vdc operation from 1.8 to 1.9 GHz. It is rated at 60
watts minimum output power and may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
60 Watts, 1.8–1.9 GHz
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
70
Output Power (Watts)
60
50
40
30
20
10
1
3
5
7
9
11
13
201
93
LOT
COD
E
V
CC
= 26 V
I
CQ
= 150 mA
f = 1.9 GHz
Input Power (Watts)
Package 20223
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25° C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70° C)
T
STG
R
θJC
Symbol
V
CER
V
CES
V
EBO
I
C
P
D
Value
55
55
4.0
8
233
1.33
–40 to +150
0.75
Unit
Vdc
Vdc
Vdc
Adc
W
W/°C
°C
°C/W
1
9/28/98
PTB 20193
Electrical Characteristics
Characteristics
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
(100% Tested)
e
Conditions
I
B
= 0 A, I
C
= 60 mA, R
BE
= 27
Ω
V
BE
= 0 V, I
C
= 60 mA
I
C
= 0 V, I
E
= 25 mA
V
CE
= 5 V, I
C
= 300 mA
Symbol
V
(BR)CER
V
(BR)CES
V
(BR)EBO
H
fe
Min
55
55
4
20
Typ
—
—
5
50
Max
—
—
—
120
Units
Volts
Volts
Volts
—
RF Specifications
(100% Tested)
Characteristics
Gain
(V
CC
= 26 Vdc, Pout = 15 W, I
CQ
= 150 mA, f = 1.9 GHz)
Power Output at 1 dB Compression
(V
CC
= 26 Vdc, I
CQ
= 150 mA, f = 1.9 GHz)
Collector Efficiency
(V
CC
= 26 Vdc, Pout = 60 W, I
CQ
= 150 mA, f = 1.9 GHz)
Load Mismatch Tolerance
(V
CC
= 26 Vdc, Pout = 30 W, I
CQ
= 150 mA,
f = 1.9 GHz—all phase angles at frequency of test)
Symbol
G
pe
P-1dB
Min
8.0
60
43
—
Typ
8.5
—
—
—
Max
—
—
—
5:1
Units
dB
Watts
%
—
η
C
Ψ
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CC
= 26 Vdc, Pout = 60 W, I
CQ
= 150 mA)
Z Source
Z Load
Z
0
= 50
Ω
Frequency
GHz
1.80
1.90
R
4.0
3.6
Z Source
jX
-1.6
-.08
R
2.7
2.6
Z Load
jX
0.65
1.90
2
5/19/98
e
Typical Performance
Gain vs. Frequency
(as measured in a broadband circuit)
9.0
PTB 20193
Efficiency vs. Output Power
60
50
Efficiency (%)
8.5
40
30
20
10
0
20
25
30
35
40
45
50
55
60
65
Gain (dB)
8.0
V
CC
= 26 V
7.5
V
CC
= 26 V
I
CQ
= 150 mA
f = 1.9 GHz
I
CQ
= 150 mA
Pout =15 W
1820
1840
1860
1880
1900
7.0
1800
Frequency (MHz)
Output Power (Watts)
Intermodulation Distortion vs. Power Output
-26
-28
-30
V
CC
= 26 V
I
CQ
= 150 mA
f
1
= 1.899 GHz
f
2
= 1.900 GHz
IMD (dBc)
-32
-34
-36
-38
-40
0
10
20
30
40
50
60
Output Power (Watts-PEP)
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
Specifications subject to change without notice.
LF
© 1996 Ericsson Inc.
EUS/KR 1301-PTB 20193 Uen Rev. A 09-28-98
3
5/19/98
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