THYRISTOR MODULE
PK
(PD,PE,KK)
55F
UL:E76102 M）
（
Power Thyristor/Diode Module
PK55F
series are designed for various rectifier circuits
and power controls. For your circuit application. following internal connections and wide
voltage ratings up to 1,600V are available. High precision 25mm (1inch) width package
and electrically isolated mounting base make your mechanical design easy.
●
I
T(AV)
55A, I
T(RMS)
86A, I
TSM
1750A
●
di/dt
●
dv/dt
25
12.5
12
K
1
G
1
K
2
G
2
150 A/μs
500V/μs
K2
G2
3
2
M5X10
K2
G2
3
2
1
2.8
#110TAB
（Applications）
Various rectifiers
AC/DC motor drives
Heater controls
Light dimmers
Static switches
A1K2
（K2）
K1
（A2） G1
1
PK
K2
3
2
2
PE
K2
G2
K1
（A2） G1
1
31max
19.5
80±0.2
A1K2
（K2）
K1
（A2） G1
1
1
（A1）
PD
KK
■Maximum
Ratings
Ratings
Symbol
Item
PK55F40
PD55F40
PE55F40
KK55F40
400
480
400
PK55F80
PD55F80
PE55F80
KK55F80
800
960
800
PK55F120
PD55F120
PE55F120
KK55F120
1200
1300
1200
PK55F160
PD55F160
PE55F160
KK55F160
1600
1700
1600
Ratings
55
86
1600
/
1750
12800
10
3
3
10
5
150
2500
−40
to
＋125
−40
to
＋125
2.7（28）
2.7（28）
170
Unit
V
RRM
V
RSM
V
DRM
Symbol
（
I
T AV）
（
I
T RMS）
I
TSM
I
2
t
P
GM
（AV）
P
G
I
FGM
V
FGM
V
RGM
di／dt
V
ISO
Tj
Tstg
＊Repetitive
Peak Reverse Voltage
＊Non-Repetitive
Peak Reverse Voltage
Repetitive Peak Off-State Voltage
Item
＊Average
On-State Current
＊R.M.S.
On-State Current
＊Surge
On-State Current
＊I
2
t
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage (Forward)
Peak Gate Voltage (Reverse)
Critical Rate of Rise of On-State Current
＊Isolation
Breakdown Voltage (R.M.S.)
＊Operating
Junction Temperature
＊Storage
Temperature
Mounting
（M5）
Mounting
Torque
Terminal（M5）
Mass
6.5
29max
A1K2
（K2）
K1
（A2）
Unit：
A
3.5
7.5 3.5
2- 6
20
20
92
20
17.5
V
V
V
Unit
A
A
A
A
2
S
W
W
A
V
V
A
/
μs
V
℃
℃
N½½
（㎏f½B）
g
Conditions
Single phase, half wave, 180°
conduction, Tc：89℃
Single phase, half wave, 180°
conduction, Tc：89℃
1
cycle, 50Hz/60Hz, peak Value, non-repetitive
／
2
Value for one cycle of surge current
I
G
＝100mA，
Tj＝25℃，
D
＝
1 2
V
DRM
，
G
/
dt＝0.1A
/
V
／
dI
μs
A.C.1minute
Recommended Value 1.5-2.5（15-25）
Recommended Value 1.5-2.5（15-25）
■Electrical
Characteristics
Symbol
Item
I
DRM
Repetitive Peak Off-State Current, max.
I
RRM
＊Repetitive
Peak Reverse Current, max.
V
TM
＊Peak
On-State Voltage, max.
I
GT
／V
GT
Gate Trigger Current/Voltage, max.
V
GD
Non-Trigger Gate, Voltage. min.
tgt
Turn On Time, max.
Critical Rate of Rise of Off-State Voltage, min.
dv／dt
I
H
Holding Current, typ.
I
L
Lutching Current, typ.
Rth j-c）＊Thermal Impedance, max.
（
＊mark：Thyristor
and Diode part. No mark：Thyristor part
Conditions
at V
DRM
, single phase, half wave, Tj＝125℃
at V
DRM
, single phase, half wave, Tj＝125℃
On-State Current 170A, Tj＝25℃ Inst. measurement
Tj＝25℃，I
T
＝1A，V
D
＝6V
Tj＝125℃，V
D
＝
1 2
V
DRM
／
I
T
＝55A，
G
＝100mA，
I
Tj＝25℃，
D
＝
1 2
V
DRM
，
G
/
dt＝0.1A
/
V
／
dI
μs
2
V
DRM
, Exponential wave.
Tj＝125℃, V
D
＝ ／
3
Tj＝25℃
Tj＝25℃
Junction to case
Ratings
15
15
1.40
70
/
3
0.25
10
500
50
100
0.5
Unit
mA
mA
V
mA
/
V
V
μs
V
/
μs
mA
mA
℃
/
W
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
Transient Thermal Impedance
θ
（℃/W）
j-c
Surge On-State Current
（A）
;;
PK(PD,PE,KK)55F
２
Gate Characteristics
１
3
０
On-State Voltage max
Peak Gate Current
（3A）
５
２
On-State Current
（A）
１
１
０
Peak Forward Gate Voltage
（10V）
Av
er
ag
e
Gate Voltage
（V）
Pe
Po ak G
we a
（ te
r
Ga
10
te
W
Po
）
we
（
r
3W
）
５
２
１
2
０
１
０
０
５
２
５
２
125℃
25℃
−30℃
Maximum Gate Voltage that will not trigger any unit
１
１
０
１
−１ １
０
１
０
２
５
１
２
０
２
５
１
３
０
２
５
５
０
１
２
３
4
５
Gate Current
（mA）
On-State Voltage
（V）
Allowable Case Temperature
（℃）
１０
２
１０
０
８
０
６
０
４
０
２
０
Average On-State Current Vs Power Dissipation
（Single phase half wave）
Per one element
１０
３
１０
２
１０
１
１０
０
９
０
８
０
７
０
６
０
Average On-State Current Vs Maximum Allowable
Case Temperature
（Single phase half wave）
Per one element
2
Power Dissipation
（W）
D.C.
360
。
θ
＝180゜
θ
＝120゜
θ
＝90゜
: Conduction Angle
θ
＝60゜
θ
＝30゜
2
360
。
: Conduction Angle
θ
θ
θ
＝30゜ ＝60゜ ＝90゜ ＝120゜ ＝180゜
θ
θ
D.C.
０
０
１
０
２
０
３
０
４
０
５
０
６
０
７
０
８
０
９ １０
０ ０
５
０
０
１
０
２
０
３
０
４
０
５
０
６
０
７
０
８
０
９
０
Average On-State Current
（A）
Average On-State Current
（A）
２０
００
Surge On-State Current Rating
（Non-Repetitive）
Per one element
Ｔ = ５ start
½２ ℃
１０
．
Transient Thermal Impedance
Per one element
０９
．
１０
５０
０８
．
０７
．
０６
．
０５
．
０４
．
０３
．
０２
．
Junction to case
１０
００
60Hz
50Hz
５０
０
０１
．
０
−３
１
０
１
−２
０
１
−１
０
１
０
０
１
１
０
１
２
０
１
３
０
１
４
０
０
0
１
０
２
５
１
１
０
２
５
１
2
０
Time
（Cycles）
Time
t
sec）
（
Total Power Dissipation
（W）
Id Ar.m.s.）
（
W3
Conduction Angle 180゜
B6
Rth:1.0℃/W
Rth:0.8℃/W
Rth:0.6℃/W
Rth:0.4℃/W
Rth:0.2℃/W
Id Aav.）
（
Id Aav.）
（
４０
０
Id Ar.m.s.）
（
３０
０
２０
０
B2
W1
１０
０
8０
９
０
１０
０
１０
１
０
４
０
８
０
１０
２
１０
２
１５
２
０
４
０
Rth:1.0℃/W
Rth:0.8℃/W
Rth:0.6℃/W
Rth:0.4℃/W
Rth:0.2℃/W
Rth:0.1℃/W
８
０
９
０
１０
０
１０
１
１０
２
１５
２
０
Rth:0.8℃/W
Rth:0.6℃/W
Rth:0.4℃/W
Rth:0.2℃/W
Rth:0.1℃/W
９
０
１０
０
１０
１
１０
２
４
０
８
０
１０
２
１５
２
０
５
０
１０
０
８
０
１０
２
Output Current
（A）
Ambient Temperature
（℃）
Ambient Temperature
（℃）
Ambient Temperature
（℃）
Allowable Case Temperature
（℃）
５０
０
Output Current
W１ Bidirectional connection
；
B２ Two Pluse bridge connection
；
B ； pulse bridge connection
６ Six
Ｗ３ Three phase
；
bidiretional connection
测试/测量
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