NTE2517 (NPN) & NTE2518 (PNP)
Silicon Complementary Transistors
High Current Switch
Features:
D
Low Saturation Voltage
D
High Current Capacity and Wide ASO
Applications:
D
Voltage Regulators
D
Relay Drivers
D
Lamp Drivers
Absolute Maximum Ratings:
(T
A
= +25°C unless otherwise specified)
Collector to Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector to Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter to Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Collector Dissipation, P
C
T
A
= +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W
T
C
= +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Symbol
I
CBO
I
EBO
h
FE
f
T
Test Conditions
V
CB
= 50V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 2V, I
C
= 100mA
V
CE
= 2V, I
C
= 2A
V
CE
= 10V, I
C
= 50mA
Min
–
–
140
35
–
Typ
–
–
–
–
140
Max
100
100
400
–
–
MHz
Unit
nA
nA
Electrical Characteristics (Cont’d):
(T
A
= +25°C unless otherwise specified)
Parameter
Output Capacitance
NTE2517
NTE2518
Collector to Emitter Saturation Voltage
NTE2517
NTE2518
Base to Emitter Saturation Voltage
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Turn–On Time
Storage Time
NTE2517
NTE2518
Fall Time
t
f
V
BE(sat)
I
C
= 1A, I
B
= 50mA
V
(BR)CBO
I
C
= 10µA, I
E
= 0
V
(BR)CEO
I
C
= 1mA, R
BE
=
∞
V
(BR)EBO
I
E
= 10µA, I
C
= 0
t
on
t
stg
I
C
= 10A, I
B1
= 10A,
I
B2
= 1A
V
CE(sat)
I
C
= 1A, I
B
= 50mA
Symbol
C
ob
Test Conditions
V
CB
= 10V, f = 1MHz
Min
–
–
–
–
–
60
50
6
–
–
–
–
Typ
10
25
110
250
0.85
–
–
–
35
550
350
30
Max
–
–
300
500
1.2
–
–
–
–
–
–
–
Unit
pF
pF
mV
mV
V
V
V
V
ns
ns
ns
ns
.315 (8.0)
.130
(3.3)
.118 (3.0)
Dia
.433
(11.0)
.295
(7.5)
E
C
B
.610
(15.5)
.094 (2.4)
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