NTE2510
Silicon NPNTransistor
High Frequency Video Output
Features:
D
High Gain Bandwidth Product: f
T
= 2GHz
D
High Current Capacity: I
C
= 500mA
Applications:
D
High–Definition CRT Display Video Output
D
Wide–Band Amp
Absolute Maximum Ratings:
(T
A
= +25°C unless otherwise specified)
Collector–to–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–to–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Emitter–to–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000mA
Collector Dissipation, P
C
T
A
= +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3W
T
C
= +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Symbol
I
CBO
I
EBO
h
FE
f
T
Test Conditions
V
CB
= 20V, I
E
= 0
V
EB
= 2V, I
C
= 0
V
CE
= 5V, I
C
= 50mA
V
CE
= 5V, I
C
= 500mA
V
CE
= 5V, I
C
= 100mA
Min
–
–
60
20
–
Typ
–
–
–
–
2.0
Max
0.1
5.0
120
–
–
GHz
Unit
µA
µA
Electrical Characteristics (Cont’d):
(T
A
= +25°C unless otherwise specified)
Parameter
Output Capacitance
Reverse Transfer Capacitance
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Symbol
C
ob
C
re
V
CE(sat)
V
BE(sat)
Test Conditions
V
CB
= 10V, f = 1MHz
V
CB
= 10V, f = 1MHz
I
C
= 300mA, I
B
= 30mA
I
C
= 300mA, I
B
= 30mA
Min
–
–
–
–
Typ
6.0
4.6
0.3
0.9
Max
–
–
0.8
1.2
Unit
pF
pF
V
V
.315 (8.0)
.130
(3.3)
.118 (3.0)
Dia
.433
(11.0)
.295
(7.5)
E
C
B
.610
(15.5)
.094 (2.4)
嵌入式系统
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