NTE2511 (NPN) & NTE2512 (PNP)
Silicon Complementary Transistors
High Frequency Video Output for HDTV
Features:
D
High Gain Bandwidth Product: f
T
= 800MHz Typ.
D
Low Reverse Transfer Capacitance and Excellent HF Response:
NTE2511: C
re
= 2.9pF
NTE2512: C
re
= 4.6pF
Applications:
D
Very High–Definition CRT Display
D
Video Output
D
Color TV Chroma Output
D
Wide–Band Amp
Absolute Maximum Ratings:
(T
A
= +25°C unless otherwise specified)
Collector Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Collector Power Dissipation, P
C
T
A
= +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W
T
C
= +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Symbol
I
CBO
I
EBO
h
FE
f
T
Test Conditions
V
CB
= 60V, I
E
= 0
V
EB
= 2V, I
C
= 0
V
CE
= 10V, I
C
= 50mA
V
CE
= 10V, I
C
= 400mA
V
CE
= 10V, I
C
= 100mA
Min
–
–
100
20
–
Typ
–
–
–
–
800
Max
0.1
1.0
320
–
–
MHz
Unit
µA
µA
Electrical Characteristics (Cont’d):
(T
A
= +25°C unless otherwise specified)
Parameter
Collector Emitter Saturation Voltage
NTE2511
NTE2512
Base Emitter Saturation Voltage
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Output Capacitance
NTE2511
NTE2512
Reverse Transfer Capacitance
NTE2511
NTE2512
C
re
V
CB
= 30V, f = 1MHz
V
BE(sat)
I
C
= 100mA, I
B
= 10mA
V
(BR)CBO
I
C
= 10µA, I
E
= 0
V
(BR)CEO
I
C
= 1mA, R
BE
=
∞
V
(BR)EBO
I
E
= 100µA, I
C
= 0
C
ob
V
CB
= 30V, f = 1MHz
Symbol
V
CE(sat)
Test Conditions
I
C
= 100mA, I
B
= 10mA
Min
–
–
–
80
60
4
–
–
–
–
Typ
–
–
–
–
–
–
3.4
5.2
2.9
4.6
Max
0.6
0.8
1.0
–
–
–
–
–
–
–
Unit
V
V
V
V
V
V
pF
pF
pF
pF
.330 (8.38)
Max
.175
(4.45)
Max
.450
(11.4)
Max
.118 (3.0)
Dia
.655
(16.6)
Max
.030 (.762) Dia
E
C
B
.090 (2.28)
.130 (3.3)
Max