THYRISTOR
SMG04C60
Thyristor
SMG04C60
is designed for full wave AC, DC control
applications. It can be used as an ON/OFF function or for phase control operation.
5.0±0.2
4.0±0.2
5.0±0.2
TO92
Typical Applications
Home Appliances : Electric Blankets, Starter for FL
●
Industrial Use
: SMPS, Solenoid for Breakers, Motor Controls, Heater Controls
●
2.3±0.2
2.0MAX
3
1
Features
I
T(AV)
=0.4A
●
High Surge Current
●
Low Voltage Drop
●
13.5±0.5
0.45
+0.2
- 0.1
0.45
+0.2
- 0.1
2
1 Gate
2A
3K
1
2
3
2.50
+0.6
- 0.2
2.50
+0.6
- 0.2
Identifying Code：
S04C6
Unit：
mm
■Maximum
Ratings
Symbol
V
RRM
V
RSM
V
DRM
I
T AV）
（
I
T RMS）
（
I
TSM
It
2
（Tj=25℃
unless otherwise specified）
Item
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S. On-State Current
Surge On-State Current
It
2
Reference
Ratings
600
720
600
Unit
V
V
V
A
A
A
A
2
S
W
W
A
V
V
℃
℃
g
Single phase, half wave, 180°conduction, Ta＝55℃
,
Single phase, half wave, 180°conduction, Ta＝55℃
,
50/60Hz,
1 2
cycle Peak value, non-repetitive
／
0.4
0.63
9.1
/
10
0.4
0.5
0.1
0.3
6
6
−40∼＋125
−40∼＋125
0.2
P
GM
（AV）
P
G
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
（Forward）
Peak Gate Voltage
（Reverse）
Operating Junction Temperature
Storage Temperature
Mass
I
FGM
V
FGM
V
RGM
Tj
Tstg
■Electrical
Characteristics
Symbol
I
DRM
I
RRM
V
TM
I
GT
V
GT
V
GD
I
H
（
Rth j-a
）
Item
Repetitive Peak Off-State Current
Repetitive Peak Reverse Current
Peak On-State Voltage
Gate Trigger Current
Gate Trigger Voltage
Non-Trigger Gate Voltage
Holding Current
Thermal Resistance
Reference
Tj＝125℃, V
D
＝V
DRM
, R
GK
＝1kΩ
Tj＝125℃, V
R
＝V
RRM
, R
GK
＝1kΩ
I
T
＝1.2A,
Inst. measurement
V
D
＝6V,
R
L
＝100Ω
Tj＝125℃, V
D
＝
1 2
V
DRM
, R
GK
＝1kΩ
／
Junction to ambient
Ratings
Min.
Typ.
Max.
0.5
0.5
1.2
100
0.8
0.2
300
150
Unit
mA
mA
V
μA
V
V
μA
℃
/
W
SMG04C60
１
０
Gate Characteristics
ak
Pe
Peak Gate Voltage V）
（６
１
０
ow
te P
Ga
ge
era
Av
On-State Voltage（MAX）
Ｔ= ５
½２ ℃
１
Peak Gate Current . A）
（０３
On-State Current A）
（
１０
００
. 5W
r0
e（
Gate Voltage
（V）
１
．W
r
（０
we
Po
te
Ga
）
）
１
２℃
５
Non-Trigger Gate Voltage (0.2V)
０１
.
００
.１
０１
.
１
１
０
１０
０
０１
.
０
０５
.
１
１５
.
２
２５
.
３
Gate Current mA）
（
On-State Voltage
（V）
０５
.
Average On-State Current vs Power
Dissipation
（Single phase half wave）
θ１ ０
＝８゜
θ１ ０
＝２゜
θ９ ゜
＝０
１０
３
Average On-State Current vs Ambient
Temperature
（Single phase half wave）
０
π
θ
３０
６゜
2π
０４
.
θ６ ゜
＝０
θ３ ゜
＝０
Ambient Temperature
（℃）
１０
２
１０
１
１０
０
９
０
８
０
７
０
６
０
５
０
４
０
０
θ３ ゜
＝０
θ６ ゜
＝０
Power Dissipation
（W）
θ Conduction Angle
：
０３
.
０２
.
０
π
θ
３０
６゜
2π
０１
.
０
０
θ Conduction Angle
：
θ９ ゜ θ １ ０
＝０
＝２゜
θ１ ０
＝８゜
００ ０１ ０１ ０２ ０２ ０３ ０３ ０４ ０４
.５
.
.５
.
.５
.
.５
.
.５
００ ０１ ０１ ０２ ０２ ０３ ０３ ０４ ０４
.５
.
.５
.
.５
.
.５
.
.５
Average On-State Current
（A）
Average On-State Current
（A）
１
２
Transient Thermal Impedance
（℃／W）
Surge On-State Current Rating
（Non-Repetitive）
１０
００
Maximum Transient Thermal
Impedance Characteristics
Surge On-State Current A）
（
１
０
８
６
４
２
０
１
６ H
Z
０
５ H
Z
０
１０
０
１
０
１
０
１０
０
１
００ １
.０
００
.１
０１
.
１
１
０
１０
０
１０
００
Time
（Cycles）
Time
（sec.）
１０
００
I
GT
−Tj
［Change Rate½
（Typical）
Gate Trigger Voltage
（V）
−０
２
０
２
０
４
０
６
０
８
０
１０ １０ １０
０
２
４
１
０９
.
V
GT
−Tj
（Typical）
I
GT
（t℃）
×100
（％）
I
GT
２ ℃）
（ ５
０８
.
０７
.
０６
.
０５
.
０４
.
０３
.
０２
.
０１
.
０
−０
４
−０
２
０
２
０
４
０
６
０
８
０
１０ １０ １０
０
２
４
１０
０
１
０
−０
４
Junction Temp.
（℃）
Junction Temp.
（℃）
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