THYRISTOR MODULE
PK
(PD,PE,KK)
25F
UL:E76102 M）
（
Power Thyristor/Diode Module
PK25F
series are designed for various rectifier circuits
and power controls. For your circuit application. following internal connections and wide
voltage ratings up to 1,600V are available. High precision 25mm (1inch) width package
and electrically isolated mounting base make your mechanical design easy.
●
I
T(AV)
25A, I
T(RMS)
39A, I
TSM
580A
●
di/dt
●
dv/dt
25
12.5
12
K
1
G
1
K
2
G
2
100 A/μs
500V/μs
K2
G2
3
2
M5X10
K2
G2
3
2
1
2.8
#110TAB
（Applications）
Various rectifiers
AC/DC motor drives
Heater controls
Light dimmers
Static switches
A1K2
（K2）
K1
（A2） G1
1
PK
K2
3
2
2
PE
K2
G2
K1
（A2） G1
1
31max
19.5
80±0.2
A1K2
（K2）
K1
（A2） G1
1
1
（A1）
PD
KK
■Maximum
Ratings
Ratings
Symbol
Item
PK25F40
PD25F40
PE25F40
KK25F40
400
480
400
PK25F80
PD25F80
PE25F80
KK25F80
800
960
800
PK25F120
PD25F120
PE25F120
KK25F120
1200
1300
1200
PK25F160
PD25F160
PE25F160
KK25F160
1600
1700
1600
Ratings
25
39
530
/
580
1400
10
1
3
10
5
100
2500
−40 to ＋125
−40 to ＋125
2.7（28）
2.7（28）
170
Unit
V
RRM
V
RSM
V
DRM
Symbol
（
I
T AV）
（
I
T RMS）
I
TSM
I
2
t
P
GM
（AV）
P
G
I
FGM
V
FGM
V
RGM
di／dt
V
ISO
Tj
Tstg
＊Repetitive
Peak Reverse Voltage
＊Non-Repetitive
Peak Reverse Voltage
Repetitive Peak Off-State Voltage
Item
＊Average
On-State Current
＊R.M.S.
On-State Current
＊Surge
On-State Current
＊I
2
t
Peak Gate Power Dissipation
Average
Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage (Forward)
Peak Gate Voltage (Reverse)
Critical Rate of Rise of On-State Current
＊Isolation
Breakdown Voltage (R.M.S.)
＊Operating
Junction Temperature
＊Storage
Temperature
Mounting
（M5）
Mounting
Torque
Terminal（M5）
Mass
6.5
29max
A1K2
（K2）
K1
（A2）
Unit：
A
3.5
7.5 3.5
2- 6
20
20
92
20
17.5
V
V
V
Unit
A
A
A
A
2
S
W
W
A
V
V
A
/
μs
V
℃
℃
N½½
（㎏f½B）
g
Conditions
Single phase, half wave, 180°
conduction, Tc：96℃
Single phase, half wave, 180°
conduction, Tc：96℃
1
cycle, 50Hz/60Hz, peak Value, non-repetitive
／
2
Value for one cycle of surge current
I
G
＝100mA，
Tj＝25℃，
D
＝
1 2
V
DRM
，
G
/
dt＝0.1A
/
V
／
dI
μs
A.C.1minute
Recommended Value 1.5-2.5（15-25）
Recommended Value 1.5-2.5（15-25）
■Electrical
Characteristics
Symbol
Item
I
DRM
Repetitive Peak Off-State Current, max.
I
RRM
＊Repetitive
Peak Reverse Current, max.
V
TM
＊Peak
On-State Voltage, max.
I
GT
／V
GT
Gate Trigger Current/Voltage, max.
V
GD
Non-Trigger Gate, Voltage. min.
tgt
Turn On Time, max.
Critical Rate of Rise of Off-State Voltage, min.
dv／dt
I
H
Holding Current, typ.
I
L
Lutching Current, typ.
Rth j-c）＊Thermal Impedance, max.
（
＊mark：Thyristor
and Diode part. No mark：Thyristor part
Conditions
at V
DRM
, single phase, half wave, Tj＝125℃
at V
DRM
, single phase, half wave, Tj＝125℃
On-State Current 75A, Tj＝25℃ Inst. measurement
Tj＝25℃，I
T
＝1A，V
D
＝6V
Tj＝125℃，V
D
＝
1 2
V
DRM
／
I
T
＝25A，
G
＝100mA，
I
Tj＝25℃，
D
＝
1 2
V
DRM
，
G
/
dt＝0.1A
/
V
／
dI
μs
2
V
DRM
, Exponential wave.
Tj＝125℃, V
D
＝ ／
3
Tj＝25℃
Tj＝25℃
Junction to case
Ratings
10
10
1.55
50
/
3
0.25
10
500
50
100
0.78
Unit
mA
mA
V
mA
/
V
V
μs
V
/
μs
mA
mA
℃
/
W
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
Transient Thermal Impedance
θ
（℃/W）
j-c
Surge On-State Current
（A）
;;
PK(PD,PE,KK)25F
２
Gate Characteristics
１
3
０
On-State Voltage max
Peak Forward Gate Voltage
（10V）
Gate Voltage
（V）
Ga
te
２
Po
we
（
r
Peak Gate Current
（3A）
５
Av
er
ag
e
）
On-State Current
（A）
１
１
０
Pe
Po ak G
we a
（ te
r
10
W
５
２
１
２
０
1W
１
０
０
）
５
２
５
２
125℃
25℃ −30℃
Maximum Gate Voltage that will not trigger any unit
１
１
０
１
−１ １
０
１
０
２
５
１
２
０
２
５
１
３
０
２
５
５
０
１
２
３
４
５
Gate Current
（mA）
On-State Voltage
（V）
Allowable Case Temperature
（℃）
６
０
Average On-State Current Vs Power Dissipation
（Single phase half wave）
Per one element
１０
３
１０
２
１０
１
１０
０
９
０
８
０
Average On-State Current Vs Maximum Allowable
Case Temperature
（Single phase half wave）
Per one element
Power Dissipation
（W）
５
０
D.C.
2
４
０
３
０
θ
＝180゜
θ
＝120゜
θ
＝90゜
θ
＝60゜
360
。
: Conduction Angle
θ
＝30゜
2
２
０
１
０
360
。
θ
＝30゜
θ
＝90゜ θ
＝180゜
D.C.
: Conduction Angle
＝120゜
θ
＝60゜ θ
０
０
５
１
０
１
５
２
０
２
５
３
０
３
５
４
０
４
５
５
０
７
０
０
５
１
０
１
５
２
０
２
５
３
０
３
５
４
０
４
５
５
０
Average On-State Current
（A）
Average On-State Current
（A）
８０
０
Surge On-State Current Rating
（Non-Repetitive）
Per one element
Ｔ = ５ start
½２ ℃
１０
．
Transient Thermal Impedance
Per one element
０９
．
Junction to case
６０
０
０８
．
０７
．
０６
．
０５
．
０４
．
０３
．
０２
．
４０
０
60Hz
50Hz
２０
０
０１
．
０
−３
１
０
１
−２
０
１
−１
０
１
０
０
１
１
０
１
２
０
１
３
０
１
４
０
０
0
１
０
２
５
１
１
０
２
５
１
２
０
Time
（Cycles）
Time
t
sec）
（
Allowable Case Temperature
（℃）
２０
５
Total Power Dissipation
（W）
Conduction Angle θ 180°
Id Ar.m.s.）
（
２０
０
W3
B6
B2
Rth:1.0℃/W
Rth:0.8℃/W
Rth:0.6℃/W
Rth:0.4℃/W
Rth:0.2℃/W
Rth:1.0℃/W
Rth:0.8℃/W
Rth:0.6℃/W
Rth:0.4℃/W
Rth:0.2℃/W
Id Aav.）
（
９
０
Rth:1.0℃/W
Rth:0.8℃/W
Rth:0.6℃/W
Rth:0.4℃/W
Rth:0.2℃/W
Id Aav.）
（
１０
０
１０
５
１０
０
１０
０
Id Ar.m.s.）
（
１０
１
W1
９
０
１０
０
１０
１
１０
２
１５
２
４
０
８
０
１０
２
５
０
１０
１
１０
２
１５
２
２
０
４
０
６
０
０
４
０
８
０
１０
２
１０
２
０
４
０
８
０
１０
２
１５
２
０
０
０
Output Current
（A）
Ambient Temperature
（℃）
Ambient Temperature
（℃） Ambient Temperature
（℃）
Allowable Case Temperature
（℃）
Output Current
W１ Bidirectional connection
；
B２
；Two Pluse bridge connection
B６ Six pulse bridge connection
；
Ｗ３ Three phase
；
bidiretional connection
模拟电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
