LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
3
COLLECTOR
BCW65ALT1
3
1
BASE
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
32
60
5.0
800
2
EMITTER
1
2
Unit
Vdc
Vdc
Vdc
mAdc
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
θJA
P
D
556
300
2.4
R
θJA
T
J
, T
stg
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
DEVICE MARKING
BCW65ALT1 = EA
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 10mAdc, I
B
= 0 )
Collector–Emitter Breakdown Voltage
(I
C
= 10
µAdc,
V
EB
= 0 )
Emitter–Base Breakdown Voltage
(I
E
= 10
µAdc,
I
C
= 0)
Collector Cutoff Current
(V
CE
= 32 Vdc, I
E
= 0 )
(V
CE
= 32 Vdc, I
E
= 0 , T
A
= 150°C)
Emitter Cutoff Current
(V
EB
= 4.0 Vdc, I
C
= 0)
I
EBO
—
—
20
nAdc
V
(BR)EBO
V
(BR)CEO
32
—
—
Vdc
V
(BR)CES
60
—
—
Vdc
5.0
—
—
Vdc
I
CES
—
—
—
—
20
20
nAdc
µAdc
1. FR– 5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
M11–1/2
LESHAN RADIO COMPANY, LTD.
BCW65ALT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
h
FE
35
75
100
35
V
CE(sat)
—
—
V
BE(sat)
Min
Typ
Max
Unit
—
ON CHARACTERISTICS
DC Current Gain
( I
C
= 100
µAdc,
V
CE
= 10 Vdc )
( I
C
= 10 mAdc, V
CE
= 1.0 Vdc )
( I
C
= 100 mAdc, V
CE
= 1.0 Vdc )
( I
C
= 500 mAdc, V
CE
= 2.0 Vdc )
Collector–Emitter Saturation Voltage
( I
C
= 500 mAdc, I
B
= 50 mAdc )
( I
C
= 100 mAdc, I
B
= 10 mAdc )
Base–Emitter Saturation Voltage
( I
C
= 500 mAdc, I
B
= 50 mAdc )
—
—
—
—
0.7
0.3
—
—
220
250
—
Vdc
—
—
Vdc
—
2.0
SM
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I
C
= 20mAdc, V
CE
= 10 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance
f
T
C
obo
100
—
—
—
—
—
—
—
—
12
80
10
MHz
pF
pF
dB
C
ibo
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
Noise Figure
NF
(V
CE
= 5.0 Vdc, I
C
= 0.2 mAdc, R
S
= 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
SWITCHING CHARACTERISTICS
Turn–On Time
(I
B1
= I
B2
= 15 mAdc)
Turn–Off Time
(I
C
= 150 mAdc, R
L
= 150
Ω
)
t
on
t
off
—
—
—
—
100
400
ns
ns
M11–2/2
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