MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BCW61BLT1/D
General Purpose Transistors
PNP Silicon
COLLECTOR
3
1
BASE
BCW61BLT1
BCW61CLT1
BCW61DLT1
3
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
–32
–32
–5.0
–100
2
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
R
q
JA
PD
556
300
2.4
R
q
JA
TJ, Tstg
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
DEVICE MARKING
BCW61BLT1 = BB, BCW61CLT1 = BC, BCW61DLT1 = BD
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –2.0 mAdc, IB = 0)
Emitter – Base Breakdown Voltage
(IE = –1.0
m
Adc, IC = 0)
Collector Cutoff Current
(VCE = –32 Vdc)
(VCE = –32 Vdc, TA = 150°C)
1. FR– 5 = 1.0
0.75
2. Alumina = 0.4 0.3
V(BR)CEO
V(BR)EBO
ICES
—
—
–20
–20
nAdc
µAdc
–32
–5.0
—
—
Vdc
Vdc
0.062 in.
0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1996
1
BCW61BLT1 BCW61CLT1 BCW61DLT1
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –10
µAdc,
VCE = –5.0 Vdc)
hFE
BCW61B
BCW61C
BCW61D
BCW61B
BCW61C
BCW61D
BCW61B
BCW61C
BCW61D
hfe
BCW61B
BCW61C
BCW61D
VCE(sat)
—
—
VBE(sat)
–0.68
–0.6
VBE(on)
–0.6
–0.75
–1.05
–0.85
Vdc
–0.55
–0.25
Vdc
175
250
350
350
500
700
Vdc
30
40
100
140
250
380
80
100
100
—
—
—
310
460
630
—
—
—
—
—
(IC = –2.0 mAdc, VCE = –5.0 Vdc)
(IC = –50 mAdc, VCE = –1.0 Vdc)
AC Current Gain
(VCE = –5.0 Vdc, IC = –2.0 mAdc, f = 1.0 kHz)
Collector – Emitter Saturation Voltage
(IC = –50 mAdc, IB = –1.25 mAdc)
(IC = –10 mAdc, IB = –0.25 mAdc)
Base – Emitter Saturation Voltage
(IC = –50 mAdc, IB = –1.25 mAdc)
(IC = –10 mAdc, IB = –0.25 mAdc)
Base – Emitter On Voltage
(IC = –2.0 mAdc, VCE = –5.0 Vdc)
SMALL– SIGNAL CHARACTERISTICS
Output Capacitance
(VCE = –10 Vdc, IC = 0, f = 1.0 MHz)
Noise Figure
(VCE = –5.0 Vdc, IC = –0.2 mAdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
Cobo
—
NF
—
6.0
6.0
dB
pF
SWITCHING CHARACTERISTICS
Turn–On Time
(IC = –10 mAdc, IB1 = –1.0 mAdc)
Turn–Off Time
(IB2 = –1.0 mAdc, VBB = –3.6 Vdc, R1 = R2 = 5.0 kΩ, RL = 990
Ω)
ton
—
toff
—
800
150
ns
ns
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
BCW61BLT1 BCW61CLT1 BCW61DLT1
TYPICAL NOISE CHARACTERISTICS
(VCE = – 5.0 Vdc, TA = 25°C)
10
7.0
en, NOISE VOLTAGE (nV)
5.0
IC = 10
µA
30
µA
3.0
2.0
1.0 mA
100
µA
300
µA
BANDWIDTH = 1.0 Hz
RS
≈
0
In, NOISE CURRENT (pA)
1.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
1.0
10
20
50
100 200
500 1.0 k
f, FREQUENCY (Hz)
2.0 k
5.0 k
10 k
0.1
10
20
50
100 200
500 1.0 k 2.0 k
f, FREQUENCY (Hz)
5.0 k
10 k
300
µA
100
µA
30
µA
10
µA
IC = 1.0 mA
BANDWIDTH = 1.0 Hz
RS
≈ ∞
Figure 1. Noise Voltage
Figure 2. Noise Current
NOISE FIGURE CONTOURS
(VCE = – 5.0 Vdc, TA = 25°C)
1.0 M
500 k
200 k
100 k
50 k
20 k
10 k
5.0 k
2.0 k
1.0 k
500
200
100
10
20
30
50 70 100
200 300
IC, COLLECTOR CURRENT (µA)
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
500 700 1.0 k
1.0 M
500 k
200 k
100 k
50 k
20 k
10 k
5.0 k
2.0 k
1.0 k
500
200
100
10
20
30
50 70 100
200 300
IC, COLLECTOR CURRENT (µA)
BANDWIDTH = 1.0 Hz
RS , SOURCE RESISTANCE (OHMS)
RS , SOURCE RESISTANCE (OHMS)
BANDWIDTH = 1.0 Hz
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
500 700 1.0 k
Figure 3. Narrow Band, 100 Hz
Figure 4. Narrow Band, 1.0 kHz
RS , SOURCE RESISTANCE (OHMS)
1.0 M
500 k
200 k
100 k
50 k
20 k
10 k
5.0 k
2.0 k
1.0 k
500
200
100
10
20
30
50 70 100
10 Hz to 15.7 kHz
Noise Figure is Defined as:
NF
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
200 300
500 700 1.0 k
IC, COLLECTOR CURRENT (µA)
+
20 log10
en2
)
4KTRS
)
In 2RS2 1 2
4KTRS
en = Noise Voltage of the Transistor referred to the input. (Figure 3)
In = Noise Current of the Transistor referred to the input. (Figure 4)
K = Boltzman’s Constant (1.38 x 10–23 j/°K)
T = Temperature of the Source Resistance (°K)
RS = Source Resistance (Ohms)
Figure 5. Wideband
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
BCW61BLT1 BCW61CLT1 BCW61DLT1
104
VCC = 30 V
IC, COLLECTOR CURRENT (nA)
103
102
101
100
10–1
10–2
ICEO
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by the model
as shown in Figure 15. Using the model and the device thermal
response the normalized effective transient thermal resistance of
Figure 14 was calculated for various duty cycles.
To find Z
θJA(t)
, multiply the value obtained from Figure 14 by the
steady state value R
θJA
.
Example:
The MPS3905 is dissipating 2.0 watts peak under the following
conditions:
t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)
Using Figure 14 at a pulse width of 1.0 ms and D = 0.2, the reading of
r(t) is 0.22.
The peak rise in junction temperature is therefore
∆T
= r(t) x P(pk) x R
θJA
= 0.22 x 2.0 x 200 = 88°C.
For more information, see AN–569.
ICBO
AND
ICEX @ VBE(off) = 3.0 V
–4
0
–2
0
0
+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 15. Typical Collector Leakage Current
6
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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