LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and
its external resistor bias network. The BRT (Bias Resistor Transistor) contains a
single transistor with a monolithic bias network consisting of two resistors; a
series base resistor and a base–emitter resistor. The BRT eliminates these indi-
vidual components by
integrating them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SC–59 package which is
designed for low power surface mount applications.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Moisture Sensitivity Level: 1
• ESD Rating – Human Body Model: Class 1
ESD Rating
– Machine Model: Class B
• The SC–59 package can be soldered using wave or reflow. The modified
gull–winged leads absorb thermal stress during soldering eliminating the
possibility of damage to the die.
• Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
MUN2211T1
SERIES
NPN SILICON
BIAS RESISTOR
TRANSISTORS
3
2
1
SC–59
CASE 318D, STYLE 1
PIN 2
BASE
(INPUT)
R
1
PIN 3
COLLECTOR
(OUTPUT)
R
2
PIN 1
EMITTER
(GROUND)
MARKINGDIAGRAM
DEVICE MARKING INFORMATION
*See specific marking information in the device marking table on page 2 of this data sheet.
8X
M
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Symbol
Value
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
Thermal Resistance –
Junction-to-Lead
Junction and Storage
Temperature Range
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
R
θJA
R
θJL
T
J
, T
stg
V
CBO
V
CEO
I
C
Symbol
P
D
50
50
100
8X = Specific Device Code*
M = Date Code
Unit
Vdc
Vdc
mAdc
Max
Unit
mW
°C/W
°C/W
°C/W
°C
230(Note 1)
338(Note 2)
1.8 (Note 1)
2.7 (Note 2)
540(Note 1)
370(Note 2)
264(Note 1)
287(Note 2)
–55 to +150
MUN2211T1 Series–1/11
LESHAN RADIO COMPANY, LTD.
MUN2211T1 Series
DEVICE MARKING AND RESISTOR VALUES
Device
MUN2211T1
MUN2212T1
MUN2213T1
MUN2214T1
MUN2215T1 (Note 3)
MUN2216T1 (Note 3)
MUN2230T1 (Note 3)
MUN2231T1 (Note 3)
MUN2232T1 (Note 3)
MUN2233T1 (Note 3)
MUN2234T1 (Note 3)
MUN2236T1
MUN2237T1
MUN2240T1 (Note 3)
MUN2241T1 (Note 3)
Package
SC–59
SC–59
SC–59
SC–59
SC–59
SC–59
SC–59
SC–59
SC–59
SC–59
SC–59
SC–59
SC–59
SC–59
SC–59
Marking
8A
8B
8C
8D
8E
8F
8G
8H
8J
8K
8L
8N
8P
8T
8U
R1 (K)
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
100
47
47
100
R2 (K)
10
22
47
47
∞
∞
1.0
2.2
4.7
47
47
100
22
∞
∞
Shipping
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3. New devices. Updated curves to follow in subsequent data sheets.
MUN2211T1 Series–2/11
LESHAN RADIO COMPANY, LTD.
MUN2211T1 Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
Collector-Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
Emitter-Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
MUN2211T1
MUN2212T1
MUN2213T1
MUN2214T1
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
MUN2236T1
MUN2237T1
MUN2240T1
MUN2241T1
I
CBO
I
CEO
I
EBO
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
50
50
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.05
0.13
0.2
0.1
–
–
nAdc
nAdc
mAdc
Collector-Base Breakdown Voltage (I
C
= 10
µA,
I
E
= 0)
Collector-Emitter Breakdown Voltage (Note 4)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CBO
V
(BR)CEO
Vdc
Vdc
ON CHARACTERISTICS
(Note 4)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
MUN2211T1
MUN2212T1
MUN2213T1
MUN2214T1
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
MUN2236T1
MUN2237T1
MUN2240T1
MUN2241T1
h
FE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
160
160
–
60
100
140
140
350
350
5.0
15
30
200
150
150
140
350
350
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.25
Vdc
Collector-Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.3 mA)
(I
C
= 10 mA, I
B
= 5 mA) MUN2230T1/MUN2231T1
(I
C
= 10 mA, I
B
= 1 mA) MUN2215T1/MUN2216T1/
MUN2232T1/MUN2233T1/MUN2234T1
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kΩ)
MUN2211T1
MUN2212T1
MUN2214T1
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
MUN2213T1
MUN2240T1
MUN2236T1
MUN2237T1
MUN2241T1
V
CE(sat)
V
OL
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 kΩ)
(V
CC
= 5.0 V, V
B
= 5.5 V, R
L
= 1.0 kΩ)
(V
CC
= 5.0 V, V
B
= 4.0 V, R
L
= 1.0 kΩ)
(V
CC
= 5.0 V, V
B
= 5.0 V, R
L
= 1.0 kΩ)
4. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%
MUN2211T1 Series–3/11
LESHAN RADIO COMPANY, LTD.
MUN2211T1 Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
(Note 5) (Continued)
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kΩ)
(V
CC
= 5.0 V, V
B
= 0.050 V, R
L
= 1.0 kΩ)
MUN2230T1
MUN2215T1
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 kΩ)
MUN2216T1
MUN2233T1
MUN2240T1
Input Resistor
MUN2211T1
MUN2212T1
MUN2213T1
MUN2214T1
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
MUN2235T1
MUN2236T1
MUN2237T1
MUN2240T1
MUN2241T1
MUN2211T1/MUN2212T1/MUN2213T1/
MUN2236T1
MUN2214T1
MUN2215T1/MUN2216T1/MUN2240T1/
MUN2241T1
MUN2230T1/MUN2231T1/MUN2232T1
MUN2233T1
MUN2234T1
MUN2237T1
V
OH
4.9
–
–
Vdc
R
1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
70
32.9
70
32.9
70
0.8
0.17
–
0.8
0.055
0.38
1.7
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
100
47
100
47
100
1.0
0.21
–
1.0
0.1
0.47
2.1
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
130
61.1
130
61.1
100
1.2
0.25
–
1.2
0.185
0.56
2.6
kΩ
Resistor Ratio
R
1
/R
2
5. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%
350
P
D
, POWER DISSIPATION (mW)
300
250
200
150
100
50
0
–50
R
θJA
= 370°C/W
0
50
100
T
A
, AMBIENT TEMPERATURE (°C)
150
Figure 1. Derating Curve
MUN2211T1 Series–4/11
LESHAN RADIO COMPANY, LTD.
MUN2211T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS – MUN2211T1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1
I
C
/I
B
= 10
hFE, DC CURRENT GAIN
T
A
= -25°C
25°C
75°C
1000
V
CE
= 10 V
T
A
= 75°C
25°C
-25°C
100
0.1
0.01
0.001
0
20
40
60
I
C
, COLLECTOR CURRENT (mA)
80
10
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 2. V
CE(sat)
versus I
C
Figure 3. DC Current Gain
4
f = 1 MHz
I
E
= 0 V
T
A
= 25°C
100
75°C
IC, COLLECTOR CURRENT (mA)
10
1
0.1
0.01
25°C
T
A
= -25°C
Cob , CAPACITANCE (pF)
3
2
1
V
O
= 5 V
0
1
2
5
6
7
4
V
in
, INPUT VOLTAGE (VOLTS)
3
8
9
10
0
0
10
20
30
40
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
10
V
O
= 0.2 V
V in , INPUT VOLTAGE (VOLTS)
T
A
= -25°C
25°C
75°C
1
0.1
0
10
20
30
I
C
, COLLECTOR CURRENT (mA)
40
50
Figure 6. Input Voltage versus Output Current
MUN2211T1 Series–5/11
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