BC 856S
PNP Silicon AF Transistor Array
•
For AF input stages and driver applications
•
High current gain
•
Low collector-emitter saturation voltage
•
Two ( galvanic) internal isolated Transistors
with high matching in one package
4
5
6
2
1
3
VPS05604
Type
BC 856S
Marking Ordering Code
3Ds
Q62702-C2532
Pin Configuration
1/4=E1/E2
2/5=B1/B2
3/6=C2/C1
Package
SOT-363
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC collector current
Peak collector current
Total power dissipation,
T
S
= 115 °C
Junction temperature
Storage temperature
Symbol
Value
65
80
80
5
100
200
250
150
- 65...+150
mW
°C
mA
Unit
V
V
CEO
V
CBO
V
CES
V
EBO
I
C
I
CM
P
tot
T
j
T
stg
Thermal Resistance
Junction ambient
1)
Junction - soldering point
R
thJA
R
thJS
≤275
≤140
K/W
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu
Semiconductor Group
Semiconductor Group
1
1
Ma
1998-11-01
-12-1998
BC 856S
Electrical Characteristics
at
T
A
=25°C, unless otherwise specified
Parameter
Symbol
Values
min.
DC Characteristics per Transistor
Collector-emitter breakdown voltage
typ.
-
-
-
-
-
-
max.
-
-
-
-
15
5
Unit
V
(BR)CEO
V
(BR)CBO
V
(BR)CES
V
(BR)EBO
I
CBO
I
CBO
h
FE
65
80
80
5
-
-
V
I
C
= 10 mA,
I
B
= 0
Collector-base breakdown voltage
I
C
= 10 µA,
I
B
= 0
Collector-emitter breakdown voltage
I
C
= 10 µA,
V
BE
= 0
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
Collector cutoff current
V
CB
= 30 V,
I
E
= 0
Collector cutoff current
nA
µA
-
V
CB
= 30 V,
I
E
= 0 ,
T
A
= 150 °C
DC current gain 1)
I
C
= 10 µA,
V
CE
= 5 V
I
C
= 2 mA,
V
CE
= 5 V
Collector-emitter saturation voltage1)
-
200
250
290
90
250
700
850
650
-
-
475
mV
300
650
-
-
750
820
V
CEsat
-
-
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
Base-emitter saturation voltage 1)
V
BEsat
-
-
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
Base-emitter voltage 1)
V
BE(ON)
600
-
I
C
= 2 mA,
V
CE
= 5 V
I
C
= 10 mA,
V
CE
= 5 V
1) Pulse test: t < 300µs; D < 2%
Semiconductor Group
Semiconductor Group
2
2
Ma
1998-11-01
-12-1998
BC 856S
Electrical Characteristics
at
T
A
=25°C, unless otherwise specified
Symbol
Values
Parameter
min.
AC Characteristics per Transistor
Transition frequency
typ.
250
3
8
4.5
2
330
30
max.
-
-
-
-
-
-
-
Unit
f
T
C
cb
C
eb
h
11e
h
12e
h
21e
h
22e
-
-
-
-
-
-
-
MHz
pF
I
C
= 20 mA,
V
CE
= 5 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz
Short-circuit input impedance
kΩ
10
-4
-
µS
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
Open-circuit reverse voltage transfer ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
Short-circuit forward current transfer ratio
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
Open-circuit output admittance
I
C
= 2 mA,
V
CE
= 5 V,
f
= 1 kHz
Semiconductor Group
Semiconductor Group
3
3
Ma
1998-11-01
-12-1998
BC 856S
Total power dissipation
P
tot
=
f
(T
A
*;T
S
)
* Package mounted on epoxy
300
mW
T
S
P
tot
200
T
A
150
100
50
0
0
20
40
60
80
100
120
°C
Kein
150
T
A
,T
S
Permissible Pulse Load
R
thJS
=
f
(t
p
)
Permissible Pulse Load
P
totmax
/
P
totDC
=
f
(t
p
)
10
3
K/W
10
3
P
totmax
/ P
totDC
-
10
2
10
2
10
1
10
0
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
R
thJS
10
1
10
-1 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
10
0 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
t
p
Semiconductor Group
Semiconductor Group
4
4
Ma
1998-11-01
-12-1998
BC 856S
Transition frequency
f
T
=
f
(I
C
)
Collector-base capacität
C
CB
=
f
(V
CBO
)
Emitter-base capacität
C
EB
=
f
(V
EBO
)
EHP00378
BC 856...860
EHP00376
V
CE
= 5V
10
3
MHz
f
T
5
C
CB0
(
C
EB0
)
12
pF
10
8
C
EBO
10
2
6
5
4
C
CBO
2
10
1
10
-1
5 10
0
5
10
1
mA
10
2
0
10
-1
5
10
0
V
Ι
C
V
CB0
10
1
(
V
EB0
)
Collector cutoff current
I
CBO
=
f
(T
A
)
Collector-emitter saturation voltage
V
CB
= 30V
10
4
nA
EHP00381
I
C
=
f
(V
CEsat
),
h
FE
= 20
10
2
EHP00380
Ι
CB0
10
3
5
10
2
5
10
1
5
10
5
10
-1
0
Ι
C
mA
100 C
25 C
-50 C
max
10
1
5
typ
10
5
0
0
50
100
C
150
10
-1
0
0.1
0.2
0.3
0.4
V 0.5
T
A
V
CEsat
Semiconductor Group
Semiconductor Group
5
5
Ma
1998-11-01
-12-1998
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