PESDxU1UT series
Ultra low capacitance ESD protection diode in SOT23 package
Rev. 01 — 11 May 2005
Product data sheet
1. Product profile
1.1 General description
Ultra low capacitance ElectroStatic Discharge (ESD) protection diode in a SOT23
(TO-236AB) small SMD plastic package designed to protect one high-speed data line
from the damage caused by ESD and other transients.
1.2 Features
s
s
s
s
Unidirectional ESD protection of one line
Ultra low diode capacitance: C
d
= 0.6 pF
Max. peak pulse power: P
PP
up to 200 W
Low clamping voltage
s
ESD protection > 23 kV
s
IEC 61000-4-2; level 4 (ESD)
s
IEC 61000-4-5; (surge)
1.3 Applications
s
10/100/1000 Ethernet
s
FireWire
s
Communication systems
s
Local Area Network (LAN) equipment
s
Computers and peripherals
s
High-speed datalines
1.4 Quick reference data
Table 1:
Symbol
V
RWM
Quick reference data
Parameter
reverse stand-off voltage
PESD3V3U1UT
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
C
d
[1]
Conditions
Min
-
-
-
-
-
Typ
-
-
-
-
-
0.6
Max
3.3
5.0
12
15
24
1.5
Unit
V
V
V
V
V
pF
diode capacitance
Measured from pin 1 to 2
f = 1 MHz; V
R
= 0 V
[1]
-
Philips Semiconductors
PESDxU1UT series
Ultra low capacitance ESD protection diode in SOT23 package
2. Pinning information
Table 2:
Pin
1
2
3
Pinning
Description
cathode ESD protection diode
cathode compensation diode
common anode
1
2
1
2
006aaa441
Simplified outline
3
Symbol
3
3. Ordering information
Table 3:
Ordering information
Package
Name
PESD3V3U1UT
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
-
Description
plastic surface mounted package; 3 leads
Version
SOT23
Type number
4. Marking
Table 4:
Marking codes
Marking code
[1]
*AP
*AQ
*AR
*AS
*AT
Type number
PESD3V3U1UT
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
9397 750 14912
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 11 May 2005
2 of 13
Philips Semiconductors
PESDxU1UT series
Ultra low capacitance ESD protection diode in SOT23 package
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
PP
Parameter
peak pulse power
PESD3V3U1UT
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
I
PP
peak pulse current
PESD3V3U1UT
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
T
j
T
amb
T
stg
[1]
Conditions
8/20
µs
[1]
Min
-
-
-
-
-
Max
80
80
200
200
200
5
5
5
5
3
150
+150
+150
Unit
W
W
W
W
W
A
A
A
A
A
°C
°C
°C
8/20
µs
[1]
-
-
-
-
-
-
−65
−65
junction temperature
ambient temperature
storage temperature
Non-repetitive current pulse 8/20
µs
exponential decay waveform according to IEC 61000-4-5.
9397 750 14912
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 11 May 2005
3 of 13
Philips Semiconductors
PESDxU1UT series
Ultra low capacitance ESD protection diode in SOT23 package
ESD maximum ratings
Parameter
electrostatic discharge voltage
PESD3V3U1UT
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
PESDxU1UT
HBM MIL-STD-883
Conditions
IEC 61000-4-2
(contact discharge)
[1] [2]
Table 6:
Symbol
V
ESD
Min
Max
Unit
-
-
-
-
-
-
30
30
30
30
23
10
kV
kV
kV
kV
kV
kV
[1]
[2]
Device stressed with ten non-repetitive ESD pulses.
Measured from pin 1 to 2
Table 7:
Standard
ESD standards compliance
Conditions
> 15 kV (air); > 8 kV (contact)
> 4 kV
IEC 61000-4-2; level 4 (ESD)
HBM MIL-STD-883; class 3
001aaa631
120
I
PP
(%)
80
100 % I
PP
; 8
µs
001aaa630
I
PP
100 %
90 %
e
−t
50 % I
PP
; 20
µs
40
10 %
t
r
=
0.7 ns to 1 ns
0
10
20
30
t (µs)
40
30 ns
60 ns
t
0
Fig 1. 8/20
µs
pulse waveform according to
IEC 61000-4-5
Fig 2. ESD pulse waveform according to
IEC 61000-4-2
9397 750 14912
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 11 May 2005
4 of 13
Philips Semiconductors
PESDxU1UT series
Ultra low capacitance ESD protection diode in SOT23 package
6. Characteristics
Table 8:
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
RWM
Parameter
reverse stand-off voltage
PESD3V3U1UT
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
I
RM
reverse leakage current
PESD3V3U1UT
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
V
BR
breakdown voltage
PESD3V3U1UT
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
C
d
V
CL
diode capacitance
clamping voltage
PESD3V3U1UT
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
r
dif
differential resistance
PESD3V3U1UT
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
[1]
[2]
Conditions
Min
-
-
-
-
-
Typ
-
-
-
-
-
0.25
0.03
<1
<1
<1
6.4
7.6
15.0
18.9
27.8
0.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
3.3
5.0
12
15
24
2
1
50
50
50
6.9
8.2
16.7
20.3
30.3
1.5
9
20
12
21
23
39
28
53
40
76
400
80
200
225
300
Unit
V
V
V
V
V
µA
µA
nA
nA
nA
V
V
V
V
V
pF
V
V
V
V
V
V
V
V
V
V
Ω
Ω
Ω
Ω
Ω
V
RWM
= 3.3 V
V
RWM
= 5.0 V
V
RWM
= 12 V
V
RWM
= 15 V
V
RWM
= 24 V
I
R
= 5 mA
[2]
-
-
-
-
-
5.8
7.0
14.2
17.1
25.4
f = 1 MHz; V
R
= 0 V
I
PP
= 1 A
I
PP
= 5 A
I
PP
= 1 A
I
PP
= 5 A
I
PP
= 1 A
I
PP
= 5 A
I
PP
= 1 A
I
PP
= 5 A
I
PP
= 1 A
I
PP
= 3 A
I
R
= 1 mA
[2]
[1] [2]
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Non-repetitive current pulse 8/20
µs
exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1 to 2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
9397 750 14912
Product data sheet
Rev. 01 — 11 May 2005
5 of 13
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