ISSUED DATE :2006/09/13
REVISED DATE :
GTC220E
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BV
DSS
R
DS(ON)
I
D
20V
30m
5A
The GTC220E provides the designer with the best combination of fast switching, ruggedized device design,
ultra low on-resistance and cost-effectiveness.
*Low on-resistance
*Capable of 2.5V gate drive
*Low drive current
*Surface mount package
Description
Features
Package Dimensions
REF.
A
A1
b
c
D
Millimeter
Min.
-
0.05
0.19
0.09
2.90
Max.
1.20
0.15
0.30
0.20
3.10
REF.
E
E1
e
L
S
Millimeter
Min.
6.20
4.30
0.45
0°
Max.
6.60
4.50
0.75
8°
0.65 BSC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
, V
GS
@10V
Continuous Drain Current
3
, V
GS
@10V
Pulsed Drain Current
1,2
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
@Ta=25 :
I
D
@Ta=70 :
I
DM
P
D
@Ta=25 :
Tj, Tstg
Ratings
20
±12
5.0
4.0
20
1
0.008
-55 ~ +150
Unit
V
V
A
A
A
W
W/ :
:
Thermal Data
Parameter
Thermal Resistance Junction-ambient
Max.
Symbol
Rthj-a
Value
125
Unit
: /W
GTC220E
Page: 1/4
ISSUED DATE :2006/09/13
REVISED DATE :
Electrical Characteristics (Tj = 25 : unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Symbol
BV
DSS
BV
DSS
/
Tj
Min.
20
-
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.1
-
9.7
-
-
-
-
-
12.5
1
6.5
5
9
26.2
6.8
355
190
85
Max.
-
-
-
-
±10
1
25
30
40
-
-
-
-
-
-
-
-
-
-
Unit
V
V/ :
V
S
uA
uA
uA
m
Test Conditions
V
GS
=0, I
D
=250uA
Reference to 25 : , I
D
=1mA
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=4.6A
V
GS
= ±12V
V
DS
=20V, V
GS
=0
V
DS
=20V, V
GS
=0
V
GS
=4.5V, I
D
=5A
V
GS
=2.5V, I
D
=3A
I
D
=4.6A
V
DS
=20V
V
GS
=5V
V
DS
=10V
I
D
=1A
V
GS
=5V
R
G
=3.3
R
D
=10
V
GS
=0V
V
DS
=20V
f=1.0MHz
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : )
Drain-Source Leakage Current(Tj=70 : )
V
GS(th)
g
fs
I
GSS
I
DSS
Static Drain-Source On-Resistance
Total Gate Charge
2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(ON)
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
nC
Ns
pF
Source-Drain Diode
Parameter
Forward On Voltage
2
Symbol
V
SD
I
S
1
Min.
-
-
-
Typ.
-
-
-
Max.
1.2
1.25
20
Unit
V
A
A
Test Conditions
I
S
=1.25, V
GS
=0V, Tj=25 :
V
D
= V
G
=0V, V
S
=1.2V
Continuous Source Current(
Body Diode
)
Continuous Source Current(
Body Diode
)
I
SM
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on FR4 board, t
10sec.
GTC220E
Page: 2/4
ISSUED DATE :2006/09/13
REVISED DATE :
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
GTC220E
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Page: 3/4
ISSUED DATE :2006/09/13
REVISED DATE :
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan:
No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China:
(201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GTC220E
Page: 4/4
模拟电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
