Pb Free Plating Product
ISSUED DATE :2005/10/26
REVISED DATE :2007/01/25B
GTS9922E
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BV
DSS
R
DS(ON)
I
D
20V
15m
6.8A
The GTS9922E provides the designer with the best combination of fast switching, ruggedized device design,
ultra low on-resistance and cost-effectiveness.
*Low on-resistance
*Capable of 2.5V gate drive
*Optimal DC/DC battery application
*Surface mount package
Description
Features
Package Dimensions
REF.
A
A1
b
c
D
Millimeter
Min.
-
0.05
0.19
0.09
2.90
Max.
1.20
0.15
0.30
0.20
3.10
REF.
E
E1
e
L
S
Millimeter
Min.
6.20
4.30
0.45
0°
Max.
6.60
4.50
0.75
8°
0.65 BSC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current , V
GS
@4.5V
Continuous Drain Current , V
GS
@4.5V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
3
3
Symbol
V
DS
V
GS
I
D
@T
A
=25 :
I
D
@T
A
=70 :
I
DM
P
D
@T
A
=25 :
Tj, Tstg
Ratings
20
±12
6.8
5.4
25
1
0.008
-55 ~ +150
Unit
V
V
A
A
A
W
W/ :
:
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Symbol
Max.
Rthj-a
Value
125
Unit
: /W
GTS9922E
Page: 1/4
ISSUED DATE :2005/10/26
REVISED DATE :2007/01/25B
Electrical Characteristics (Tj = 25 : unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Symbol
BV
DSS
BV
DSS
/
Tj
Min.
20
-
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.05
-
22
-
-
-
-
-
25
3
9
11
12
47
23
1730
280
240
2.2
Max.
-
-
1.2
-
±10
10
100
15
20
40
-
-
-
-
-
-
2770
-
-
-
Unit
V
V/ :
V
S
uA
uA
uA
m
Test Conditions
V
GS
=0, I
D
=250uA
Reference to 25 : , I
D
=1mA
V
DS
=V
GS
, I
D
=1mA
V
DS
=4.5V, I
D
=6A
V
GS
= ±12V
V
DS
=20V, V
GS
=0
V
DS
=16V, V
GS
=0
V
GS
=4.5V, I
D
=6A
V
GS
=2.5V, I
D
=4A
I
D
=6A
V
DS
=16V
V
GS
=4.5V
V
DS
=15V
I
D
=1A
V
GS
=4.5V
R
G
=3.3
R
D
=15
V
GS
=0V
V
DS
=20V
f=1.0MHz
f=1.0MHz
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : )
Drain-Source Leakage Current(Tj=70 : )
V
GS(th)
g
fs
I
GSS
I
DSS
Static Drain-Source On-Resistance
2
Total Gate Charge
2
R
DS(ON)
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
R
g
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
2
nC
ns
pF
Source-Drain Diode
Parameter
Forward On Voltage
2
2
Symbol
V
SD
T
rr
Q
rr
Min.
-
-
-
Typ.
-
24
18
Max.
1.2
-
-
Unit
V
ns
nC
Test Conditions
I
S
=0.84A, V
GS
=0V
I
S
=6A, V
GS
=0V
dI/dt=100A/ s
Reverse Recovery Time
Reverse Recovery Charge
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in copper pad of FR4 board; 208 : /W when mounted on Min. copper pad.
2
GTS9922E
Page: 2/4
ISSUED DATE :2005/10/26
REVISED DATE :2007/01/25B
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
GTS9922E
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Page: 3/4
ISSUED DATE :2005/10/26
REVISED DATE :2007/01/25B
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan:
No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China:
(201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GTS9922E
Page: 4/4
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