ISSUED DATE :2004/10/13
REVISED DATE :2006/12/25B
GTS217E
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BV
DSS
R
DS(ON)
I
D
20V
22m
7A
The GTS217E provides the designer with the best combination of fast switching, ruggedized device design,
ultra low on-resistance and cost-effectiveness.
*Low on-resistance
*Capable of 2.5V gate drive
*Optimal DC/DC battery application
Description
Features
Package Dimensions
REF.
A
A1
b
c
D
Millimeter
Min.
-
0.05
0.19
0.09
2.90
Max.
1.20
0.15
0.30
0.20
3.10
REF.
E
E1
e
L
S
Millimeter
Min.
6.20
4.30
0.45
0°
Max.
6.60
4.50
0.75
8°
0.65 BSC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
@T
A
=25 :
I
D
@T
A
=70 :
I
DM
P
D
@T
A
=25 :
Tj, Tstg
Ratings
20
±12
7
5.7
30
1.5
0.012
-55 ~ +150
Unit
V
V
A
A
A
W
W/ :
:
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Max.
Symbol
Rthj-a
Value
83
Unit
:
/W
GTS217E
Page: 1/4
ISSUED DATE :2004/10/13
REVISED DATE :2006/12/25B
Electrical Characteristics (Tj = 25 : unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : )
Drain-Source Leakage Current(Tj=55 : )
Symbol
BV
DSS
V
GS(th)
g
fs
I
GSS
I
DSS
Min.
20
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
24
-
-
-
-
-
9.3
0.6
3.6
820
934
860
510
231
164
137
Max.
-
1.0
-
±10
1
5
22
30
-
-
-
-
-
-
-
Unit
V
V
S
uA
uA
uA
m
Test Conditions
V
GS
=0, I
D
=250uA
V
DS
=V
GS
, I
D
=250uA
V
DS
=5V, I
D
=7A
V
GS
= ±10V
V
DS
=16V, V
GS
=0
V
DS
=16V, V
GS
=0
V
GS
=4.5V, I
D
=6.6A
V
GS
=2.5V, I
D
=5.5A
I
D
=7A
V
DS
=10V
V
GS
=4.5V
V
DS
=10V
I
D
=1A
V
GS
=4.5V
R
G
=6
R
L
=10
V
GS
=0V
V
DS
=10V
f=1.0MHz
Static Drain-Source On-Resistance
Total Gate Charge
2
R
DS(ON)
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
Symbol
V
SD
T
rr
Q
rr
I
S
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
nC
ns
-
-
pF
Source-Drain Diode
Parameter
Forward On Voltage
2
Min.
-
-
-
-
Typ.
-
15.2
6.3
-
Max.
1.0
-
-
2.5
Unit
V
ns
nC
A
Test Conditions
I
S
=1.0A, V
GS
=0V
I
S
=7A, V
GS
=0V
dI/dt=100A/ s
V
D
=V
G
=0V, V
S
=1.0V
Reverse Recovery Time
2
Reverse Recovery Charge
Continuous Source Current (
Body Diode
)
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on FR4 board, t 10sec.
GTS217E
Page: 2/4
ISSUED DATE :2004/10/13
REVISED DATE :2006/12/25B
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Transfer Characteristics
Fig 3. On-Resistance v.s. Drain
Current and Gate Voltage
10
Fig 4. On-Resistance v.s.
Junction Temperature
1
0.1
0.01
0.001
0.0001
0.00001
Fig 5. On-Resistance
v.s. Gate-Source Voltage
Fig 6. Body Diode Characteristics
GTS217E
Page: 3/4
ISSUED DATE :2004/10/13
REVISED DATE :2006/12/25B
Fig 7. Maximum Safe Operating Area
Fig 8. Single Pulse Power Rating
Junction-to-Ambient
v.s. Junction Temperature
Fig 9. Gate Charge Characteristics
Fig 10. Normalized Maximum Transient Thermal Impedance
Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan:
No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China:
(201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GTS217E
Page: 4/4
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