e
PTB 20095
15 Watts, 915–960 MHz
Cellular Radio RF Power Transistor
Description
The 20095 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation across the 915 to 960 MHz frequency
band. Rated at 15 watts minimum output power, it may be used for
both CW and PEP applications. Ion implantation, nitride surface
passivation and gold metallization are used to ensure excellent device
reliability. 100% lot traceability is standard.
15 Watts, 915–960 MHz
Class AB Characteristics
Specified 25 Volts, 960 MHz Characteristics
- Output Power = 15 Watts
- Collector Efficiency = 50% Min at 15 Watts
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
30
Output Power (Watts)
25
20
15
10
5
0
0.0
V
CC
= 25 V
I
CQ
= 100 mA
f = 960 MHz
200
95
LOT
COD
E
0.4
0.8
1.2
1.6
2.0
Input Power (Watts)
Package 20201
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
T
STG
R
θJC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
40
50
4.0
6.7
65
0.4
–40 to +150
2.7
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98
PTB 20095
Electrical Characteristics
Characteristic
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
(100% Tested)
e
Conditions
I
B
= 0 A, I
C
= 100 mA
V
BE
= 0 V, I
C
= 100 mA
I
C
= 0 A, I
E
= 5 mA
V
CE
= 5 V, I
C
= 1.0 A
Symbol
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
h
FE
Min
25
55
3.5
20
Typ
30
70
5
50
Max
—
—
—
120
Units
Volts
Volts
Volts
—
RF Specifications
(100% Tested)
Characteristic
Gain
(V
CC
= 25 Vdc, Pout = 15 W, I
CQ
= 100 mA, f = 960 MHz)
Collector Efficiency
(V
CC
= 25 Vdc, Pout = 15 W, I
CQ
= 100 mA, f = 960 MHz)
Intermodulation Distortion
(V
CC
= 25 Vdc, Pout = 15 W(PEP), I
CQ
= 100 mA, f
1
= 915 MHz,
f
2
= 916 MHz)
Load Mismatch Tolerance
(V
CC
= 25 Vdc, Pout = 15 W, I
CQ
= 100 mA, f = 960 MHz
—all phase angles at frequency of test)
Symbol
G
pe
η
C
IMD
Min
10
50
—
Typ
11
—
-32
Max
—
—
—
Units
dB
%
dBc
Ψ
—
—
30:1
—
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CC
= 25 Vdc, Pout = 15 W, I
CQ
= 100 mA)
Z Source
Z Load
Frequency
MHz
915
935
960
R
6.3
6.0
5.9
Z Source
jX
-4.3
-4.1
-3.8
R
2.8
2.8
2.7
Z Load
jX
1.3
1.7
2.2
2
e
Typical Performance
Gain & Efficiency vs. Frequency
14
13
PTB 20095
(as measured in a broadband circuit)
80
70
60
50
Gain (dB)
12
11
10
9
8
900
V
CC
= 25 V
I
CQ
= 100 mA
Pout = 15 W
915
930
Gain (dB)
40
30
20
975
945
960
Frequency (MHz)
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
Specifications subject to change without notice.
LF
© Ericsson Components AB 1994
EUS/KR 1301-PTB 20095 Uen Rev. D 09-28-98
3
Efficiency (%)
Efficiency (%)
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