e
PTB 20074
14 watts, 1.477–1.501 GHz
Cellular Radio RF Power Transistor
Description
The 20074 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1.477 to 1.501 GHz. Rated at 14
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
14 watts, 1.477–1.501 GHz
Class AB Characteristics
30% Collector Efficiency at 10 watts
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
20
Output Power (Watts)
15
200
74
LOT
COD
E
10
V
CC
= 26 V
5
I
CQ
= 50 mA
f = 1.501 GHz
0
0
1
2
3
4
Input Power (Watts)
Package 20201
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
T
STG
R
θJC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
50
50
4.0
1.4
25
0.14
–40 to +150
7.0
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98
PTB 20074
Electrical Characteristics
Characteristic
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
(100% Tested)
e
Conditions
I
B
= 0 A, I
C
= 40 mA, R
BE
= 22
Ω
V
BE
= 0 V, I
C
= 40 mA
I
C
= 0 A, I
E
= 20 mA
V
CE
= 10 V, I
C
= 0.25 A
Symbol
V
(BR)CER
V
(BR)CES
V
(BR)EBO
h
FE
Min
50
50
4
20
Typ
—
—
5
50
Max
—
—
—
120
Units
Volts
Volts
Volts
—
RF Specifications
(100% Tested)
Characteristic
Gain
(V
CC
= 26 Vdc, Pout = 10 W, I
CQ
= 50 mA, f = 1.501 GHz)
Power Output at 1 dB Compression
(V
CC
= 26 Vdc, I
CQ
= 50 mA, f = 1.501 GHz)
Collector Efficiency
(V
CC
= 26 Vdc, Pout = 10 W, I
CQ
= 50 mA, f = 1.501 GHz)
Intermodulation Distortion
(V
CC
= 26 Vdc, Pout = 10 W(PEP), I
CQ
= 50 mA,
f
1
= 1.500 GHz, f
2
= 1.501 GHz)
Load Mismatch Tolerance
(V
CC
= 26 Vdc, Pout = 10 W, I
CQ
= 50 mA,
f = 1.501 GHz—all phase angles at frequency of test)
Ψ
—
—
5:1
—
Symbol
G
pe
P-1dB
η
C
IMD
Min
7
13
30
—
Typ
8
15
—
-30
Max
—
—
—
—
Units
dB
Watts
%
dBc
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
Specifications subject to change without notice.
LF
© Ericsson Components AB 1995
EUS/KR 1301-PTB 20074 Uen Rev. C 09-28-98
2
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
