e
PTB 20078
2.5 Watts, 1525–1660 MHz
INMARSAT RF Power Transistor
Description
The 20078 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1525 to 1660 MHz. Rated at 2.5
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
2.5 Watts, 1525–1660 MHz
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated
Surface Mountable
Available in Tape and Reel
Typical Output Power vs. Input Power
4.5
Output Power (Watts)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
200
78
LO
TC
OD
E
V
CC
= 26 V
I
CQ
= 20 mA
f = 1.66 GHz
Input Power (Watts)
Package 20227
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature
Thermal Resistance (Tflange = 70°C)
Tstg
R
θJC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
50
50
4.0
0.5
10.0
0.057
150
17.5
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98
PTB 20078
Electrical Characteristics
Characteristic
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
(100% Tested)
e
Conditions
V
BE
= 0 V, I
C
= 5 mA
I
B
= 0 A, I
C
= 10 mA, R
BE
= 22
Ω
I
C
= 0 A, I
E
= 5 mA
V
CE
= 5 V, I
C
= 250 mA
Symbol
V(
BR)CES
V(
BR)CER
V(
BR)EBO
h
FE
Min
50
50
4
20
Typ
—
—
5
40
Max
—
—
—
—
Units
Volts
Volts
Volts
—
RF Specifications
(100% Tested)
Characteristic
Gain
(V
CC
= 26 Vdc, Pout = 1.0 W, I
CQ
= 20 mA,
f = 1.525; 1.66 GHz)
Power Out at 1 dB Compression
(V
CC
= 26 Vdc, I
CQ
= 20 mA,
f = 1.525; 1.66 GHz)
Load Mismatch Tolerance
(V
CC
= 26 Vdc, Pout = 2.5 W, I
CQ
= 20 mA
f = 1.660 GHz—all phase angles at frequency of test)
Symbol
G
pe
Min
9
Typ
11.0
Max
—
Units
dB
P-1dB
2.5
3.5
—
Watts
Ψ
—
—
5:1
—
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CC
= 26 Vdc, Pout = 2.5 W, I
CQ
= 20 mA)
Z Source
Z Load
Frequency
GHz
1.525
1.593
1.660
R
16.9
13.7
11.3
Z Source
jX
0.5
2.3
4.6
R
12.9
12.9
12.9
Z Load
jX
23.8
25.9
27.7
Z
0
= 50
Ω
2
e
Typical Performance
Gain vs. Frequency
(as measured in a broadband circuit)
15
12
PTB 20078
Gain (dB)
9
6
3
0
1.50
V
CC
= 26 V
I
CQ
= 20 mA
Pin = .07 W
1.55
1.60
1.65
1.70
Frequency (GHz)
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
Specifications subject to change without notice.
LF
© 1996 Ericsson Inc.
EUS/KR 1301-PTB 20078 Uen Rev. C 09-28-98
3
嵌入式系统
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