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PTB 20101
175 Watts P-Sync, 470–860 MHz
UHF TV Power Transistor
Description
The 20101 is a class AB, NPN, common emitter UHF TV power
transistor intended for 28 Vdc operation from 470 to 860 MHz. It is
rated at 175 watts P-sync minimum output power. Ion implantation,
nitride surface passivation and gold metallization are used to ensure
excellent device reliability. 100% lot traceability is standard.
28 Volt, 860 MHz Characteristics
- Output Power = 175 Watts P-Sync
- Output Power = 110 (CW)
- Gain = 10.0 dB Min
55% Collector Efficiency at 110 Watts
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated
Typical Gain vs. Frequency
13
12
(as measured in a broadband circuit)
Gain (dB)
11
10
201
01
LOT
COD
E
V
CC
= 28 V
9
8
400
I
CQ
= 2 x 200 mA
Pout = 110 W
500
600
700
800
900
Frequency (MHz)
Package 20224
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
T
STG
R
θJC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
40
65
4.0
20
330
1.89
–40 to +150
0.53
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98
PTB 20101
Electrical Characteristics
Characteristic
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
(100% Tested)
e
Conditions
I
B
= 0 A, I
C
= 100 mA
V
BE
= 0 V, I
C
= 100 mA
I
C
= 0 A, I
E
= 5 mA
V
CE
= 5 V, I
C
= 1 A
Symbol
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
h
FE
C
ob
Min
25
55
3.5
20
—
Typ
30
70
5
50
85
Max
—
—
—
100
—
Units
Volts
Volts
Volts
—
pF
Output Capacitance (per side) V
CB
= 28 V, I
E
= 0 A, f = 1 MHz
RF Specifications
(100% Tested)
Characteristic
Output Power (P-Sync)
(V
CC
= 28 Vdc, I
CQ
= 200 mA per side, f = 860 MHz)
Gain
(V
CC
= 28 Vdc, Pout = 110 W, I
CQ
= 200 mA per side,
f = 860 MHz)
Collector Efficiency
(V
CC
= 28 Vdc, Pout = 110 W, I
CQ
= 200 mA per side,
f = 860 MHz)
Load Mismatch Tolerance
(V
CC
= 28 Vdc, Pout = 175 W, I
CQ
= 200 mA per side,
f = 860 MHz—all phase angles at frequency of test)
Ψ
—
—
5:1
—
Symbol
Pout
G
pe
Min
175
10.0
Typ
—
11
Max
—
—
Units
Watts
dB
η
C
55
58
—
%
Impedance Data
(data shown for fixed-tuned broadband circuit)
(V
CC
= 28 Vdc, Pout = 110 W, I
CQ
= 200 mA per side)
Z Source
Z Load
Frequency
MHz
450
550
650
750
850
R
0.4
0.5
0.7
1.8
2.7
Z Source
jX
-1.0
-1.3
-1.8
-2.0
-0.5
R
2.0
1.6
1.3
1.0
0.9
Z Load
jX
0.3
0.0
0.0
-0.8
-1.2
2
9/28/98
e
Typical Performance
Efficiency vs. Frequency
60
58
PTB 20101
(as measured in a broadband circuit)
Efficiency (%)
56
54
52
50
400
V
CC
= 28 V
I
CQ
= 2 x 200 mA
Pout = 110 W
500
600
700
800
900
Frequency (MHz)
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
Specifications subject to change without notice.
LF
© Ericsson Components AB 1994
EUS/KR 1301-PTB 20201 Uen Rev. D 09-28-98
3
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