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PTB 20080
25 Watts, 1.6–1.7 GHz
RF Power Transistor
Description
ThPTB 20080 is a class A/AB, NPN, silicon bipolar junction, internally-
matched RF power transistor intended for 26 Vdc operation from 1.6
to 1.7 GHz. It is rated at 25 Watts minimum output power for PEP
applications. Ion implantation, nitride surface passivation and gold
metallization ensure excellent device reliability. 100% lot traceability
is standard.
25 Watts, 1.6–1.7 GHz
Class AB Characteristics
40% Collector Efficiency at 25 Watts
Gold Metallization
Silicon Nitride Passivated
Typical Output Power & Efficiency vs. Input Power
40
80
30
60
Output Power (Watts)
20
40
V
CC
= 26 V
10
I
CQ
= 125 mA
f = 1.65 GHz
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
20
0
0
Efficiency (%)
2008
0
EXX
X
Input Power (Watts)
Package 20209
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25° C
Above 25° C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
T
STG
R
θJC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
50
50
4.0
3.4
123
0.7
150
1.43
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98
PTB 20080
Electrical Characteristics
Characteristic
Breakdown Voltage C to B
Breakdown Voltage E to B
Cut-off Current C to E
DC Current Gain
(100% Tested)
e
Conditions
V
BE
= 0 V, I
C
= 15 mA
I
C
= 5 mA
V
CE
= 26 V
V
CE
= 5 V, I
C
= 2 A
Symbol
V
(BR)CES
V
(BR)EBO
I
CES
h
FE
Min
50
4.0
—
30
Typ
—
—
—
—
Max
—
—
10
—
Units
Vdc
Vdc
mA
—
RF Specifications
(100% Tested)
Characteristic
Power Gain
(V
CC
= 26 Vdc, P
OUT
= 10 W, I
CQ
= 125 mA, f = 1.65 GHz)
Power Output at 1 dB Compression
(V
CC
= 26 Vdc, I
CQ
= 125 mA, f = 1.65 GHz)
Collector Efficiency
(V
CC
= 26 Vdc, P
OUT
= 25 W, I
CQ
= 125 mA, f = 1.65 GHz)
Load Mismatch Tolerance
(V
CC
= 26 Vdc, P
OUT
= 25 W, I
CQ
= 125 mA,
f = 1.65 GHz—all phase angles at frequency of test)
Symbol
G
pe
P-1dB
Min
10.5
25
40
—
Typ
11.5
—
44
—
Max
—
—
—
10:1
Units
dB
Watts
%
—
η
C
Ψ
Impedance Data
(data shown for fixed-tuned broadband circuit)
V
CC
= 26 Vdc, P
OUT
= 25 W, I
CQ
= 125 mA
Z Source
Z Load
Frequency
GHz
1.60
1.65
1.70
R
5.6
5.6
5.6
Z Source
jX
-4.1
-4.0
-4.0
R
2.6
2.6
2.7
Z Load
jX
-1.0
-0.6
-0.2
Z
0
= 50
Ω
2
5/6/98
e
Typical Performance
Gain vs. Frequency
13
PTB 20080
(as measured in a broadband circuit)
12
Gain (dB)
11
V
CC
= 26 V
10
I
CQ
= 125 mA
P
IN
= 0.65 W
9
1.60
1.62
1.64
1.66
1.68
1.70
Frequency (GHz)
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
Specifications subject to change without notice.
LF
© 1996 Ericsson Inc.
EUS/KR 1301-PTB 20080 Uen Rev. C 09-28-98
3
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